HTSEMI 2SC2714

2SC2714
TRANSISTOR (NPN)
SOT-23
1. BASE
FEATURES
Small reverse Transfer Capacitance:Cre=0.7pF(typ.)
z
z
Low Noise Figure:NF=2.5dB(typ.) (f=100MHz)
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
30
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current -Continuous
20
mA
PC
Collector Power Dissipation
100
mW
Tj
Junction Temperature
125
℃
Tstg
Storage Temperature
-55-+125
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Symbol
Parameter
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=10μA,IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA,IB=0
30
V
Emitter-base breakdown voltage
V(BR)EBO
IE=10μA,IC=0
4
V
Collector cut-off current
ICBO
VCB=18V,IE=0
0.5
μA
Emitter cut-off current
IEBO
VEB=4V,IC=0
0.5
μA
DC current gain
hFE
VCE=6V,IC=1mA
fT
VCE=6V,IC=1mA
550
MHz
pF
Transition frequency
40
200
Reverse Transfer capacitance
Cre
VCB=6V,IE=0,f=1MHz
0.7
Noise figure
NF
VCE=6V,Ic=1mA,f=100MHZ
2.5
CLASSIFICATION OF
Rank
Range
Marking
hFE
R
O
Y
40-80
70-140
100-200
QR
QO
QY
1 JinYu
semiconductor
5
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dB
Typical Characteristics
2SC2714
2
JinYu
semiconductor
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3
JinYu
semiconductor
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