IXSH 15N120BD1 I = 30 A C25 IXST 15N120BD1 V = 1200 V CES "S" Series - Improved SCSOA Capability VCE(sat) = 3.4 V HIGH Voltage IGBT with Diode Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 30 A IC90 TC = 90°C 15 A ICM TC = 25°C, 1 ms 60 A SSOA (RBSOA) VGE = 15 V, TJ = 125°C, RG = 10 W Clamped inductive load ICM = 40 @ 0.8 VCES A tSC TJ = 125°C, VGE = 720 V; VGE = 15 V, RG = 10 W Non repetitive 10 ms PC TC = 25°C 150 W -55 ... +150 °C TJM 150 °C Features Tstg -55 ... +150 °C • High Blocking Voltage • Epitaxial Silicon drift region - fast switching - small tail current - low switching losses • MOS gate turn-on for drive simplicity • Molding epoxies meet UL 94 V-0 flammability classification TJ Md Mounting torque (TO-247) 1.13/10 Nm/lb.in. Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering (TO-268) Weight TO-247 TO-268 300 °C 260 6 4 °C g g TO-247 AD (IXSH) (TAB) G C E TO-268 ( IXST) G E (TAB) Applications Symbol Test Conditions BVCES IC = 1.0 mA, VGE = 0 V 1200 VGE(th) IC = 250 mA, VCE = VGE 3 ICES VCE = 0.8 • VCES Note 1 IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC90, VGE = 15 V Note 2 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. TJ = 125°C TJ = 125°C IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved V 3.0 2.8 6 V 50 2.5 mA mA ±100 nA 3.4 V V • • • • AC motor speed control DC servo and robot drives Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies • DC choppers 98708A (7/00) 1-2 IXSH 15N120BD1 IXST 15N120BD1 Symbol Test Conditions gfs IC = IC90; VCE = 10 V, Note 2 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 7 Cies S 1400 pF 120 pF Cres 37 pF Qg 57 nC 14 nC 25 nC Inductive load, TJ = 25°C 30 ns IC = IC90, VGE = 15 V RG = 10 W VCE = 0.8 VCES Note 3 25 ns Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz 9.5 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) t ri td(off) tfi Eoff TO-247 AD (IXSH) Outline Dim. Millimeter Min. Max. Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 mJ C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 148 126 300 250 ns ns 1.5 2.9 td(on) Inductive load, TJ = 125°C 30 ns E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 t ri IC = IC90, VGE = 15 V RG = 10 W, VCE = 0.8 VCES Note 3 25 ns G H 1.65 2.13 4.5 0.065 0.084 0.177 2.6 mJ 265 298 ns ns J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 3.1 mJ Eon td(off) tfi Eoff 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 0.83 K/W RthJC RthCK L M (TO-247) 0.25 Reverse Diode (FRED) K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF = IC90, VGE = 0 V Note 2 IRM IF = 30A; VGE = 0 V; TJ = 100°C VR = 100 V; -diF/dt = 100 A/ms 5.5 A t rr IF = 1 A; -di/dt = 200 A/ms; VR = 30 V TJ = 25°C 30 ns RthJC TJ = 150OC TJ = 25OC 1.7 2.5 V V 0.9 K/W Notes: 1. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. 2. Pulse test, t £ 300 ms, duty cycle £ 2 % 3. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ orincreased RG. Min. Recommended Footprint © 2000 IXYS All rights reserved TO-268AA (D3 PAK) Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 2-2