BAS521 High voltage switching diode SOD-523 FEATURES • High switching speed: max. 50 ns • High continuous reverse voltage: 300 V • Repetitive peak forward current: 625 mA • Ultra small plastic SMD package. APPLICATIONS • High speed switching • High voltage switching. Dimensions in inches and (millimeters) PINNING DESCRIPTION PIN The BAS521 is a high-voltage switching diode fabricated in planar technology and encapsulated in an ultra small SOD523 (SC-79) plastic SMD package. DESCRIPTION 1 cathode 2 anode LIMITING VALUES In accordance with the absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. − MAX. VR continuous reverse voltage VRRM repetitive peak reverse voltage − 300 V IF continuous forward current Ts ≤ 90 °C; note 1 − 250 mA IFRM repetitive peak forward current tp = 1 ms; δ = 0.25 − 1 A IFSM non-repetitive peak forward current tp = 1 µs; square wave; Tj = 25 °C prior to surge − 4.5 A Ptot total power dissipation Ts ≤ 90 °C; note 1 − 500 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Note 1. Ts is the temperature at the soldering point of the cathode tab. http://www.luguang.cn Email:[email protected] 300 UNIT V BAS521 ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VBR breakdown voltage IR = 100 µA 300 340 − V VF forward voltage IF = 100 mA; note 1 − 0.95 1.1 V IR reverse current VR = 250 V − 30 150 nA VR = 250 V; Ta = 150 °C − 40 100 µA trr reverse recovery time when switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA − 16 50 ns Cd diode capacitance VR = 0 V; f = 1 MHz − 0.4 5 pF Note 1. Pulse test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-s thermal resistance from junction to solder point note 1 120 K/W Rth j-a thermal resistance from junction to ambient note 2 500 K/W Notes 1. Soldering point of the cathode tab. 2. Refer to SOD523 (SC-79) standard mounting conditions. http://www.luguang.cn Email:[email protected] BAS521 GRAPHICAL DATA MHC618 500 handbook, halfpage IF (mA) MHC619 102 handbook, halfpage IR (µA) 400 10 300 1 200 (1) (2) 100 10−1 (3) 10−2 0 0 0.5 1 VF (V) 1.5 0 40 (1) Tamb = 150 °C. (2) Tamb = 75 °C. (3) Tamb =25 °C. VR = VRmax; typical values. Fig.2 Fig.3 Forward current as a function of forward voltage; typical values. MHC620 300 handbook, halfpage 160 120 200 Tj (°C) Reverse current as a function of junction temperature. MHC621 0.42 handbook, halfpage Cd (pF) IF (mA) 200 0.38 100 0.34 0 0.3 0 Fig.4 80 50 100 150 200 Tamb (°C) Maximum permissible continuous forward current as a function of ambient temperature. http://www.luguang.cn 0 10 20 30 40 VR (V) Fig.5 Diode capacitance as a function of reverse voltage; typical values. Email:[email protected] BAS521 MBG703 102 handbook, full pagewidth IFSM (A) 10 1 10−1 1 10 102 103 tp (µs) Based on square wave currents. Tj = 25°C prior to surge. Fig.6 Maximum permissible non-repetitive peak forward current as a function of pulse duration. http://www.luguang.cn Email:[email protected] 104