LUGUANG BAS521

BAS521
High voltage switching diode
SOD-523
FEATURES
• High switching speed: max. 50 ns
• High continuous reverse voltage: 300 V
• Repetitive peak forward current: 625 mA
• Ultra small plastic SMD package.
APPLICATIONS
• High speed switching
• High voltage switching.
Dimensions in inches and (millimeters)
PINNING
DESCRIPTION
PIN
The BAS521 is a high-voltage switching diode fabricated
in planar technology and encapsulated in an ultra small
SOD523 (SC-79) plastic SMD package.
DESCRIPTION
1
cathode
2
anode
LIMITING VALUES
In accordance with the absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
MAX.
VR
continuous reverse voltage
VRRM
repetitive peak reverse voltage
−
300
V
IF
continuous forward current
Ts ≤ 90 °C; note 1
−
250
mA
IFRM
repetitive peak forward current
tp = 1 ms; δ = 0.25
−
1
A
IFSM
non-repetitive peak forward current
tp = 1 µs; square wave; Tj = 25 °C
prior to surge
−
4.5
A
Ptot
total power dissipation
Ts ≤ 90 °C; note 1
−
500
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Note
1. Ts is the temperature at the soldering point of the cathode tab.
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300
UNIT
V
BAS521
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VBR
breakdown voltage
IR = 100 µA
300
340
−
V
VF
forward voltage
IF = 100 mA; note 1
−
0.95
1.1
V
IR
reverse current
VR = 250 V
−
30
150
nA
VR = 250 V; Ta = 150 °C
−
40
100
µA
trr
reverse recovery time
when switched from IF = 30 mA to
IR = 30 mA; RL = 100 Ω; measured at
IR = 3 mA
−
16
50
ns
Cd
diode capacitance
VR = 0 V; f = 1 MHz
−
0.4
5
pF
Note
1. Pulse test: tp = 300 µs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to solder point
note 1
120
K/W
Rth j-a
thermal resistance from junction to ambient
note 2
500
K/W
Notes
1. Soldering point of the cathode tab.
2. Refer to SOD523 (SC-79) standard mounting conditions.
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BAS521
GRAPHICAL DATA
MHC618
500
handbook, halfpage
IF
(mA)
MHC619
102
handbook, halfpage
IR
(µA)
400
10
300
1
200
(1) (2)
100
10−1
(3)
10−2
0
0
0.5
1
VF (V)
1.5
0
40
(1) Tamb = 150 °C.
(2) Tamb = 75 °C.
(3) Tamb =25 °C.
VR = VRmax; typical values.
Fig.2
Fig.3
Forward current as a function of forward
voltage; typical values.
MHC620
300
handbook, halfpage
160
120
200
Tj (°C)
Reverse current as a function of junction
temperature.
MHC621
0.42
handbook, halfpage
Cd
(pF)
IF
(mA)
200
0.38
100
0.34
0
0.3
0
Fig.4
80
50
100
150
200
Tamb (°C)
Maximum permissible continuous forward
current as a function of ambient
temperature.
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0
10
20
30
40
VR (V)
Fig.5
Diode capacitance as a function of reverse
voltage; typical values.
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BAS521
MBG703
102
handbook, full pagewidth
IFSM
(A)
10
1
10−1
1
10
102
103
tp (µs)
Based on square wave currents.
Tj = 25°C prior to surge.
Fig.6 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
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104