CM1800HC-34N Single IGBTMOD™ HVIGBT Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 1800 Amperes/1700 Volts A D U D K (4 TYP) 4 F 2 B C V E 3 1 C E G M (3 TYP) W G H L (6 PLACES) J 4(C) N T X C R S 2(C) P G Q Features: E 3(E) 1(E) Inches Millimeters Dimensions Inches Millimeters A 5.19±0.02 130.0±0.5 M M4 Metric M4 B 5.51±0.02 140.0±0.5 N 2.42±0.012 61.5±0.3 C 4.88±0.01 124.0±0.25 P D 2.24±0.01 57.0±0.25 Q 0.2±0.008 5.0±0.2 E 1.57±0.008 40.0±0.2 R 0.65 Min. 16.5 Min. F 0.79±0.004 20.0±0.1 S 0.30 Min. 7.7 Min. G 1.92±0.008 48.8±0.2 T 0.71±0.008 18.0±0.2 H 0.42±0.008 10.65±0.2 U 1.16±0.02 29.5±0.5 J 0.41±0.008 10.35±0.2 V 0.60±0.008 15.0±0.2 K M8 Metric M8 W 0.21±0.008 5.2±0.2 L 0.28 Dia. 7.0 Dia. X Rev. 4/09 £Low Drive Power £Low VCE(sat) £Super-Fast Recovery Outline Drawing and Circuit Diagram Dimensions Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. 1.50+0.04/-0.0 38.0+1.0/-0.0 1.10+0.04/-0.0 28.0+1.0/-0.0 Free-Wheel Diode £Isolated Baseplate for Easy Heat Sinking Applications: £Traction £Medium Voltage Drives £High Voltage Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM1800HC-34N is a 1700V (VCES), 1800 Ampere Single IGBTMOD™ Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 1800 34 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM1800HC-34N Single IGBTMOD™ HVIGBT Module 1800 Amperes/1700 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM1800HC-34N Units Junction Temperature Tj -40 to 150 °C Storage Temperature Tstg -40 to 125 °C Operating Temperature Topr -40 to 125 °C Collector-Emitter Voltage (VGE = 0V) VCES 1700 Volts Gate-Emitter Voltage (VCE = 0V) VGES ±20 Volts Collector Current (DC, Tc = 75°C) IC 1800 Amperes Peak Collector Current (Pulse) ICM 3600* Amperes Emitter Current** (Tc = 25°C) IE 1800 Amperes Emitter Surge Current** (Pulse) IEM 3600* Amperes Maximum Collector Dissipation (Tc = 25°C, IGBT Part, Tj(max) ≤ 125°C) PC 10000 Watts Max. Mounting Torque M8 Main Terminal Screws – 177 in-lb Max. Mounting Torque M6 Mounting Screws – 53 in-lb Max. Mounting Torque M4 Auxiliary Terminal Screws – 27 in-lb Module Weight (Typical) – 0.8 kg Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.) Viso 4000 Volts Maximum Turn-Off Switching Current (VCC ≤ 1200V, VGE = ±15V, Tj = 125°C) – 3600 Amperes Short Circuit Capability, Maximum Pulse Width (VCC ≤ 1200V, VGE = ±15V, Tj = 125°C) – 10 µs Maximum Reverse Recovery Instantaneous Power (VCC ≤ 1200V, die/dt ≤ 4200A/µs, Tj = 125°C) – 750 kW * Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Toprmax rating (125°C). **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 Rev. 4/09 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM1800HC-34N Single IGBTMOD™ HVIGBT Module 1800 Amperes/1700 Volts Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Collector-Cutoff Current ICES Min. Typ. Max. Units VCE = VCES, VGE = 0V, Tj = 25°C – – 6.0 mA VCE = VCES, VGE = 0V, Tj = 125°C – 4.5 12.0 mA VGE(th) IC = 180mA, VCE = 10V 6.0 7.0 8.0 Volts VGE = VGES, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage Gate Leakage CurrentIGES Test Conditions Collector-Emitter Saturation Voltage VCE(sat) IC = 1800A, VGE = 15V, Tj = 25°C – 2.15 2.8 Volts IC = 1800A, VGE = 15V, Tj = 125°C – 2.4 – Volts Input Capacitance Cies VCE = 10V, VGE = 0V, – 264 – nF Output Capacitance Coes f = 100kHz, – 14.4 – nF Reverse Transfer Capacitance Cres Tj = 25°C – 4.2 – nF Total Gate Charge QG VCC = 850V, IC = 1800A, VGE = 15V – 10.2 – µC Emitter-Collector Voltage** VEC IE = 1800A, VGE = 0V, Tj = 25°C – 2.6 3.3 Volts IE = 1800A, VGE = 0V, Tj = 125°C – 2.3 – Volts Turn-On Delay Time td(on) VCC = 850V, IC = 1800A, – 1.0 – µs Turn-On Rise Time tr VGE1 = -VGE2 = 15V, RG(on) = 0.9Ω, – 0.4 – µs Turn-On Switching Energy Turn-Off Delay Time Turn-Off Fall Time Eon Inductive Load – 550 – mJ/P td(off) VCC = 850V, IC = 1800A, – 1.2 – µs tf VGE1 = -VGE2 = 15V, RG(off) = 2.2Ω, – 0.3 – µs Turn-Off Switching Energy Eoff Inductive load – 560 – mJ/P Reverse Recovery Time** Irr VCC = 850V, IE = 1800A, – 720 – Amperes Reverse Recovery Time** trr die/dt = -3700A/µs, – 1.0 – µs Reverse Recovery Charge** Qrr Tj = 125°C, – 420 – µC Reverse Recovery Energy** Erec Inductive Load – 280 – mJ/P Test Conditions Min. Typ. Max. Units * Pulse width and repetition rate should be such that device junction temperature rise is negligible. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Thermal Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Thermal Resistance, Junction to Case Rth(j-c) Q Per IGBT – – 12.5 K/kW Thermal Resistance, Junction to Case Rth(j-c) D Per FWDi – – 28.0 K/kW Rth(c-f) Per Module, Thermal Grease Applied – 11.0 – K/kW Min. Typ. Max. Units Contact Thermal Resistance, Case to Fin Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Comparative Tracking Index Clearance Symbol Test Conditions CTI – 600 – – – – – 19.5 – – mm Creepage Distance – – 32.0 – – mm Internal Inductance LC-E(int) – – 16 – nH Internal Lead Resistance RC-E(int) – – 0.14 – mΩ Rev. 4/09 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM1800HC-34N Single IGBTMOD™ HVIGBT Module 1800 Amperes/1700 Volts OUTPUT CHARACTERISTICS (TYPICAL) 12V VGE = 20V 2400 2000 10V 1600 1200 9V 800 400 8V 0 1 2 3 4 5 6 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1000 2000 4000 VCC = 850V VGE = ±15V RG = 0.9Ω LS = 100nH Tj = 125°C 600 500 400 300 200 100 0 0 1000 2000 3000 4000 FREE-WHEEL DIODE REVERSE RECOVERY CHARGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE REVERSE RECOVERY ENERGY CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE REVERSE RECOVERY CHARGE CHARACTERISTICS (TYPICAL) 500 400 300 200 100 0 1000 2000 3000 4000 700 REVERSE RECOVERY CHARGE, Qrr, (J/PULSE) VCC = 850V VGE = ±15V RG = 0.9Ω LS = 100nH Tj = 125°C 600 VCC = 850V VGE = ±15V IC = 1800A LS = 100nH Tj = 125°C 600 500 400 300 200 100 0 0 2 4 6 8 500 400 300 200 100 0 2 4 6 8 GATE RESISTANCE, RG, (Ω) GATE RESISTANCE, RG, (Ω) TRANSFER CHARACTERISTICS (TYPICAL) TURN-OFF DELAY TIME VS. COLLECTOR CURRENT (TYPICAL) TURN-ON DELAY TIME VS. COLLECTOR CURRENT (TYPICAL) 2000 1600 1200 800 100 VCC = 850V VGE = ±15V RG(off) = 2.2Ω RG(on) = 0.9Ω LS = 100nH Tj = 125°C 400 7 8 9 10 11 12 13 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 14 10-1 10 101 0 1000 2000 3000 COLLECTOR CURRENT, IC, (AMPERES) 4000 SWITCHING TIME, td(on), (ns) 2400 6 VCC = 850V VGE = ±15V IC = 1800A LS = 100nH Tj = 125°C 600 0 10 101 2800 700 EMITTER CURRENT, IE, (AMPERES) VCE = 20V Tj = 25°C Tj = 125°C 3200 0 3000 700 EMITTER CURRENT, IE, (AMPERES) SWITCHING TIME, td(off), (ns) COLLECTOR CURRENT, IC, (AMPERES) VGE = 0V Tj = 25°C Tj = 125°C EMITTER CURRENT, IE, (AMPERES) 3600 4 4.0 COLLECTOR-EMITTER VOLTAGE, VCE(sat), (VOLTS) 700 0 FREE-WHEEL DIODE REVERSE RECOVERY ENERGY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY ENERGY, Erec, (mJ/PULSE) 2800 COLLECTOR-EMITTER VOLTAGE, VCES, (VOLTS) 3200 0 REVERSE RECOVERY CHARGE, Qrr, (J/PULSE) 15V Tj = 25°C REVERSE RECOVERY ENERGY, Erec, (J/PULSE) COLLECTOR CURRENT, IC, (AMPERES) 3600 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) VCC = 850V VGE = ±15V RG(off) = 2.2Ω RG(on) = 0.9Ω LS = 100nH Tj = 125°C 100 10-1 0 1000 2000 3000 4000 COLLECTOR CURRENT, IC, (AMPERES) Rev. 4/09 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM1800HC-34N Single IGBTMOD™ HVIGBT Module 1800 Amperes/1700 Volts RISE TIME VS. COLLECTOR CURRENT (TYPICAL) FALL TIME VS. COLLECTOR CURRENT (TYPICAL) 101 100 0 1000 2000 3000 0 1200 1000 2000 3000 3000 4000 SWITCHING LOSS (ON) VS. GATE RESISTANCE (TYPICAL) 3500 VCC = 850V VGE = ±15V IC = 1800A LS = 100nH Tj = 125°C 3000 2500 2000 400 1000 2000 3000 3000 2500 2000 1500 0 2 4 6 8 COLLECTOR CURRENT, IC, (AMPERES) CAPACITANCE VS. COLLECTOR-EMITTER VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Coes 101 VGE = 15V f = 100kHz Tj = 25°C 100 Cres 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 20 VGE = 15V Tj = 25°C Tj = 125°C 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 1000 2000 3000 COLLECTOR CURRENT, IC, (AMPERES) 2 4 6 8 10 GATE CHARGE, VGE 4.0 0 0 GATE RESISTANCE, RG, (Ω) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCES, (VOLTS) 102 500 10 GATE RESISTANCE, RG, (Ω) Cies VCC = 850V VGE = ±15V IC = 1800A LS = 100nH Tj = 125°C 1000 500 0 4000 103 Rev. 4/09 2000 SWITCHING LOSS (OFF) VS. GATE RESISTANCE (TYPICAL) 1000 100 10-1 1000 SWITCHING LOSS (ON) VS. COLLECTOR CURRENT (TYPICAL) 1500 0 0 COLLECTOR CURRENT, IC, (AMPERES) 800 0 0 4000 3500 1200 400 COLLECTOR CURRENT, IC, (AMPERES) VCC = 850V VGE = ±15V RG(off) = 2.2Ω RG(on) = 0.9Ω LS = 100nH Tj = 125°C 1600 800 COLLECTOR CURRENT, IC, (AMPERES) SWITCHING LOSS, Eoff, (mJ/PULSE) SWITCHING LOSS, Eon, (mJ/PULSE) 10-1 4000 2000 CAPACITANCE, Cies, Coes, Cres, (pF) 100 VCC = 850V VGE = ±15V RG(off) = 2.2Ω RG(on) = 0.9Ω LS = 100nH Tj = 125°C 1600 SWITCHING LOSS, Eon, (mJ/PULSE) 10-1 2000 VCC = 850V VGE = ±15V RG(off) = 2.2Ω RG(on) = 0.9Ω LS = 100nH Tj = 125°C SWITCHING LOSS, Eoff, (mJ/PULSE) VCC = 850V VGE = ±15V RG(off) = 2.2Ω RG(on) = 0.9Ω LS = 100nH Tj = 125°C SWITCHING TIME, tr, (ns) SWITCHING TIME, tf, (ns) 101 SWITCHING LOSS (OFF) VS. COLLECTOR CURRENT (TYPICAL) 4000 IC = 1200A VCC = 850V Tj = 25°C 16 12 8 4 0 0 2 4 6 8 10 12 14 GATE CHARGE, QG, (nC) 5 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM1800HC-34N Single IGBTMOD™ HVIGBT Module 1800 Amperes/1700 Volts REVERSE BIAS SAFE OPERATING AREA (TYPICAL) 4000 3500 3000 2500 2000 VCC ≤ 1200V VGE = ±15V RG ≥ 2.2Ω Tj = 125°C 1000 500 0 0 500 1000 1500 2000 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 6 1.2 4500 VCC ≤ 1200V di/dt ≤ 4200A/µs Tj = 125°C 4000 3500 3000 2500 2000 1500 1000 500 0 0 500 1000 1500 2000 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) TRANSIENT IMPEDANCE, Rth(j-c) REVERSE RECOVERY CURRENT, Irr, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 4500 1500 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDI) REVERSE RECOVERY SAFE OPERATING AREA (TYPICAL) 1.0 0.8 SINGLE PULSE TC = 25°C IGBT = Rth(j-c)Q = 12.5°K/kW FWDI = Rth(j-c)D = 28°K/kW 0.6 0.4 0.2 0 10-3 10-2 10-1 100 101 TIME, (s) Rev. 4/09