AO4449 30V P-Channel MOSFET General Description The AO4449 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Features VDS -30V -7A ID (at VGS=-10V) RDS(ON) (at VGS=-10V) < 34mΩ RDS(ON) (at VGS = -4.5V) < 54mΩ D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current C ±20 V -5.5 A IDM -40 Avalanche Current C IAS, IAR 23 A Avalanche energy L=0.1mH C TA=25°C EAS, EAR 26 mJ Pulsed Drain Current Power Dissipation B Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead 3.1 PD TA=70°C Junction and Storage Temperature Range 1/6 Units V -7 ID TA=70°C Maximum -30 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 2 RθJA RθJL -55 to 150 Typ 31 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W www.freescale.net.cn AO4449 30V P-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -30 Typ Max Units V VDS=-30V, VGS=0V -1 TJ=55°C -5 µA VDS=0V, VGS= ±20V Gate-Body leakagetrench current The AO4449 uses advanced technology to provide excellent RDS(ON), and ultra-low low gate charge. ±100 This nAdevice is suitable for u VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.3 ID(ON) On state drain current VGS=-10V, VDS=-5V -40 -1.85 -2.4 21 34 31.5 38 VGS=-4.5V, ID=-5A 33 54 18 VGS=-10V, ID=-7A RDS(ON) Static Drain-Source On-Resistance TJ=125°C gFS Forward Transconductance VDS=-5V, ID=-7A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance A VGS=0V, VDS=-15V, f=1MHz mΩ mΩ S -0.8 DYNAMIC PARAMETERS Ciss Input Capacitance V -1 V -3.5 A 760 pF 140 pF 95 pF 3.2 5 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 13.6 16 nC Qg(4.5V) Total Gate Charge 6.7 8 Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-7A 1.5 nC 2.5 nC 3.2 nC 8 ns 6 ns 17 ns 5 ns 15 ns nC VGS=-10V, VDS=-15V, RL=2.15Ω, RGEN=3Ω IF=-7A, dI/dt=100A/µs Body Diode Reverse Recovery Charge IF=-7A, dI/dt=100A/µs 9.7 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. 2/6 www.freescale.net.cn AO4449 30V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 30 -10V -6V -5V -4.5V VDS=-5V 35 25 30 -ID(A) -ID (A) 20 -4V 25 20 15 -3.5V 15 10 10 125°C 5 VGS=-3V 5 0 0 0 1 2 3 4 5 1 50 Normalized On-Resistance VGS=-4.5V 40 35 30 25 20 VGS=-10V 15 10 2.5 3 3.5 4 4.5 5 VGS=-10V ID=-7A 1.6 1.4 17 5 VGS=-4.5V ID=-5A2 10 1.2 1 0.8 0 5 10 15 0 20 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 80 1.0E+02 ID=-7A 1.0E+01 40 60 1.0E+00 125°C 40 -IS (A) RDS(ON) (mΩ Ω) 2 1.8 45 RDS(ON) (mΩ Ω) 1.5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 125°C 25°C 1.0E-01 1.0E-02 1.0E-03 20 25°C 1.0E-04 1.0E-05 0 2 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/6 25°C 4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AO4449 30V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1200 10 VDS=-15V ID=-7A 1000 Ciss Capacitance (pF) -VGS (Volts) 8 6 4 800 600 400 2 200 0 0 0 2 4 6 8 10 12 Qg (nC) Figure 7: Gate-Charge Characteristics Coss Crss 0 14 100.0 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 10.0 TA=25°C TA=150°C TA=100°C -ID (Amps) -IAR (A) Peak Avalanche Current 100.0 1ms 1.0 10ms 0.1 TA=125°C 10µs 100µs RDS(ON) limited TJ(Max)=150°C TA=25°C 10s DC 0.0 10.0 0.01 1 10 100 1000 Time in avalanche, tA (µ µs) Figure 9: Single Pulse Avalanche capability (Note C) 0.1 1 10 -VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 100 10000 TA=25°C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F) 4/6 www.freescale.net.cn AO4449 30V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=75°C/W The AO4449 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable fo 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) 5/6 www.freescale.net.cn AO4449 30V P-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig 6/6 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.freescale.net.cn