SHENZHENFREESCALE AO4449

AO4449
30V P-Channel MOSFET
General Description
The AO4449 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This
device is suitable for use as a load switch or in PWM applications.
Features
VDS
-30V
-7A
ID (at VGS=-10V)
RDS(ON) (at VGS=-10V)
< 34mΩ
RDS(ON) (at VGS = -4.5V)
< 54mΩ
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current
C
±20
V
-5.5
A
IDM
-40
Avalanche Current C
IAS, IAR
23
A
Avalanche energy L=0.1mH C
TA=25°C
EAS, EAR
26
mJ
Pulsed Drain Current
Power Dissipation B
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
3.1
PD
TA=70°C
Junction and Storage Temperature Range
1/6
Units
V
-7
ID
TA=70°C
Maximum
-30
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
W
2
RθJA
RθJL
-55 to 150
Typ
31
59
16
°C
Max
40
75
24
Units
°C/W
°C/W
°C/W
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AO4449
30V P-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-30
Typ
Max
Units
V
VDS=-30V, VGS=0V
-1
TJ=55°C
-5
µA
VDS=0V,
VGS= ±20V
Gate-Body
leakagetrench
current
The AO4449
uses advanced
technology to provide
excellent
RDS(ON), and ultra-low low gate charge.
±100 This
nAdevice is suitable for u
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.3
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-40
-1.85
-2.4
21
34
31.5
38
VGS=-4.5V, ID=-5A
33
54
18
VGS=-10V, ID=-7A
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
gFS
Forward Transconductance
VDS=-5V, ID=-7A
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
A
VGS=0V, VDS=-15V, f=1MHz
mΩ
mΩ
S
-0.8
DYNAMIC PARAMETERS
Ciss
Input Capacitance
V
-1
V
-3.5
A
760
pF
140
pF
95
pF
3.2
5
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
13.6
16
nC
Qg(4.5V) Total Gate Charge
6.7
8
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-15V, ID=-7A
1.5
nC
2.5
nC
3.2
nC
8
ns
6
ns
17
ns
5
ns
15
ns
nC
VGS=-10V, VDS=-15V,
RL=2.15Ω, RGEN=3Ω
IF=-7A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=-7A, dI/dt=100A/µs
9.7
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
2/6
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AO4449
30V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
30
-10V
-6V
-5V
-4.5V
VDS=-5V
35
25
30
-ID(A)
-ID (A)
20
-4V
25
20
15
-3.5V
15
10
10
125°C
5
VGS=-3V
5
0
0
0
1
2
3
4
5
1
50
Normalized On-Resistance
VGS=-4.5V
40
35
30
25
20
VGS=-10V
15
10
2.5
3
3.5
4
4.5
5
VGS=-10V
ID=-7A
1.6
1.4
17
5
VGS=-4.5V
ID=-5A2
10
1.2
1
0.8
0
5
10
15
0
20
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
80
1.0E+02
ID=-7A
1.0E+01
40
60
1.0E+00
125°C
40
-IS (A)
RDS(ON) (mΩ
Ω)
2
1.8
45
RDS(ON) (mΩ
Ω)
1.5
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
125°C
25°C
1.0E-01
1.0E-02
1.0E-03
20
25°C
1.0E-04
1.0E-05
0
2
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
3/6
25°C
4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AO4449
30V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1200
10
VDS=-15V
ID=-7A
1000
Ciss
Capacitance (pF)
-VGS (Volts)
8
6
4
800
600
400
2
200
0
0
0
2
4
6
8
10
12
Qg (nC)
Figure 7: Gate-Charge Characteristics
Coss
Crss
0
14
100.0
5
10
15
20
25
-VDS (Volts)
Figure 8: Capacitance Characteristics
30
10.0
TA=25°C
TA=150°C
TA=100°C
-ID (Amps)
-IAR (A) Peak Avalanche Current
100.0
1ms
1.0
10ms
0.1
TA=125°C
10µs
100µs
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
10s
DC
0.0
10.0
0.01
1
10
100
1000
Time in avalanche, tA (µ
µs)
Figure 9: Single Pulse Avalanche capability (Note C)
0.1
1
10
-VDS (Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area (Note F)
100
10000
TA=25°C
Power (W)
1000
100
10
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
4/6
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AO4449
30V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
The AO4449
uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable fo
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
5/6
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AO4449
30V P-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgd
Qgs
Vds
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
E AR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
6/6
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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