AO4940 Asymmetric Dual N-Channel MOSFET General Description The AO4940 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A monolithically integrated Schottky diode in parallel with the synchronous MOSFET to boost efficiency further. Features FET1 VDS (V) = 30V ID = 9.1A RDS(ON) < 15mΩ RDS(ON) < 23mΩ FET2 VDS(V) = 30V ID=7.8A (VGS = 10V) < 21mΩ (VGS = 10V) < 32mΩ (VGS = 4.5V) D1 Top View D2 D2 G1 S1 1 2 3 4 8 7 6 5 D2 SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode G2 S2/D1 S2/D1 S2/D1 G1 G2 S1 S2 FET2 FET1 Absolute Maximum Ratings TA=25°C unless otherwise noted Max FET1 Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS 10 sec TA=70°C B IDSM Max FET2 10 sec 30 Steady-State 30 ±20 VGS TA=25°C Continuous Drain Current AF Steady-State ±20 Units V V 9.1 7.6 7.8 6.5 7.3 6.1 6.3 5.2 A A IDM 100 64 Avalanche Current B IAR 17 9 A Repetitive avalanche energy L=0.3mH B EAR 43 12 mJ Pulsed Drain Current TA=25°C A Power Dissipation TA=70°C PDSM 2 1.4 2 1.4 1.3 0.9 1.3 0.9 -55 to 150 -55 to 150 °C Thermal Characteristics FET1(Intergrated Schottky Diode) Parameter Symbol A t ≤ 10s Maximum Junction-to-Ambient RθJA Maximum Junction-to-Ambient A Steady-State C Steady-State RθJL Maximum Junction-to-Lead Typ 48 74 32 Max 62.5 90 40 Units °C/W °C/W °C/W Thermal Characteristics FET2 Parameter Symbol Maximum Junction-to-Ambient A t ≤ 10s RθJA Maximum Junction-to-Ambient A Steady-State Steady-State RθJL Maximum Junction-to-Lead C Typ 48 74 32 Max 62.5 90 40 Units °C/W °C/W °C/W Junction and Storage Temperature Range 1/7 TJ, TSTG W www.freescale.net.cn AO4940 Asymmetric Dual N-Channel MOSFET FET1(Intergrated Schottky Diode) Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.3 VGS=10V, VDS=5V 100 TJ=125°C VGS=10V, ID=9.1A Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=7.3A gFS Forward Transconductance VDS=5V, ID=9.1A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode + Schottky Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 10 VGS=0V, VDS=0V, f=1MHz 0.1 µA 2.5 V 12.5 15 18 22 18.5 23 mΩ 0.5 V 3 A A 26 1100 pF 91 pF SWITCHING PARAMETERS Qg(10V) Total Gate Charge 15.3 20 Qg(4.5V) Total Gate Charge 7.8 10 Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=9.1A, dI/dt=300A/µs VGS=10V, VDS=15V,RL=1.65Ω, RGEN=3Ω IF=9.1A, dI/dt=300A/µs pF 225 3.0 Qgs mΩ S 0.43 1.7 VGS=10V, VDS=15V, ID=9.1A mA 1.65 903 VGS=0V, VDS=15V, f=1MHz Units V 0.1 Zero Gate Voltage Drain Current RDS(ON) Max 30 VDS=30V, VGS=0V IDSS ID(ON) Typ Ω nC 2.0 nC 3.9 nC 5.0 ns 9.2 ns 17.8 ns 4.4 ns 17 20 30.0 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t≤ 10s thermal resistance rating. Rev2: Jun. 2011 2/7 www.freescale.net.cn AO4940 Asymmetric Dual N-Channel MOSFET FET1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 30 10V 80 VDS=5V 25 6V 20 4.5V ID(A) ID (A) 60 40 15 4V 10 125°C 20 VGS=3V 0 0 0 DYNAMIC 1 2 3 4 1 5 4 5 Normalized On-Resistance 1.8 VGS=4.5V 15 10 VGS=10V 5 ID=9.1A VGS=10V 1.6 1.4 ID=7.3A VGS=4.5V 1.2 1 0.8 0 5 10 15 20 25 30 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 30 60 90 120 150 180 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 45 1.0E+02 40 1.0E+01 ID=9.1A 35 125°C 1.0E+00 30 IS (A) RDS(ON) (mΩ Ω) 3 VGS(Volts) Figure 2: Transfer Characteristics 20 125°C 25 1.0E-02 15 1.0E-03 25°C 1.0E-04 5 2 4 6 25°C 1.0E-01 20 10 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3/7 2 VDS (Volts) PARAMETERS Figure 1: On-Region Characteristics 25 RDS(ON) (mΩ Ω) 25°C 5 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AO4940 Asymmetric Dual N-Channel MOSFET FET1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1400 10 VDS=15V ID=9.1A 1200 6 4 Ciss 1000 Capacitance (pF) VGS (Volts) 8 800 600 400 Coss 2 Crss 200 0 0 0 5 10 15 20 0 Qg (nC) Figure 7: Gate-Charge Characteristics DYNAMIC PARAMETERS 1000.0 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 100 100.0 TJ(Max)=150°C TA=25°C 80 RDS(ON) limited 10.0 10µs 100µs 1ms 10ms 0.1s 1.0 TJ(Max)=150°C TA=25°C 0.1 DC 1s 10s Power (W) ID (Amps) 5 60 40 20 0.0 0.01 0.1 1 VDS (Volts) 10 0 100 0.0001 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure10: Single Pulse Power Rating Junction-toAmbient (Note E) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 0.01 Single Pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W PD Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) 4/7 www.freescale.net.cn AO4940 Asymmetric Dual N-Channel MOSFET FET2 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 5 Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 64 VGS=10V, ID=7.8A TJ=125°C VGS=4.5V, ID=6A gFS Forward Transconductance VDS=5V, ID=7.8A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=0V, f=1MHz µA ±100 nA 2.1 2.6 V 16.5 21 24 31 23.7 32 mΩ 1 V 2.4 A 448 pF A 20 mΩ S 0.75 373 VGS=0V, VDS=15V, f=1MHz Units V 1 TJ=55°C Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V IGSS RDS(ON) Typ 67 pF 41 pF Ω 1.8 2.8 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 7.2 11 Qg(4.5V) Total Gate Charge 3.5 nC 1.3 nC 1.7 nC 4.5 ns Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=15V, ID=7.8A nC VGS=10V, VDS=15V, RL=1.9Ω, RGEN=3Ω 2.7 ns 14.9 ns IF=7.8A, dI/dt=100A/µs 10.5 Body Diode Reverse Recovery Charge IF=7.8A, dI/dt=100A/µs 4.5 Body Diode Reverse Recovery Time 2.9 ns 12.6 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t≤ 10s thermal resistance rating. Rev2: Jun. 2011 5/7 www.freescale.net.cn AO4940 Asymmetric Dual N-Channel MOSFET FET2: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 15 10V 6V VDS=5V 50 VDS=5V 12 9 4.5V ID(A) ID (A) 40 30 125°C 6 20 VGS=3.5V 125°C 25°C 3 10 0 25° 0 0 1 2 3 4 5 1.5 VDS (Volts) Fig 1: On-Region Characteristics 3 3.5 4 4.5 Normalized On-Resistance 1.8 35 RDS(ON) (mΩ Ω) 2.5 VGS(Volts) Figure 2: Transfer Characteristics 40 VGS=4.5V 30 VGS=4.5V 25 VGS=10V 20 15 VGS=10V 10 VGS=10V 1.6 1.4 VGS=4.5V 1.2 1 0.8 0 5 10 15 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 60 ID=7.5A ID=8A 1.0E+00 50 1.0E-01 40 125°C 125° IS (A) RDS(ON) (mΩ Ω) 2 125°C 1.0E-02 30 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 25°C 1.0E-03 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF20 SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 25°C 1.0E-04 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 25°C 10 1.0E-05 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 VGS (Volts) VSD (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics 6/7 www.freescale.net.cn AO4940 Asymmetric Dual N-Channel MOSFET 600 10 VDS=15V ID=8A 500 VDS=15V ID=7.5A Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 400 300 Coss 200 Coss 100 0 Crss Crss 0 0 2 4 6 Qg (nC) Figure 7: Gate-Charge Characteristics 8 0 100.0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 50 10µs 1.0 1ms 10ms TJ(Max)=150°C TA=25°C 0.1s DC 10s 1s 10s 0.0 0.01 0.1 1 VDS (Volts) 10 100 Power (W) ID (Amps) 100µs 0.1 TJ(Max)=150°C TA=25°C 40 RDS(ON) limited 10.0 30 20 10 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 7/7 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 100 1000 www.freescale.net.cn