SHENZHENFREESCALE AOI4185

AOD4185/AOI4185
P-Channel Enhancement Mode Field
Effect Transistor
General Description
The AOD4185/AOI4185 uses advanced trench technology to provide excellent RDS(ON) and low gate
charge. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high
current applications.
Features
VDS (V) = -40V
ID = -40A
(VGS = -10V)
RDS(ON) < 15mΩ (VGS = -10V)
RDS(ON) < 20mΩ (VGS = -4.5V)
D
G
S
Absolute Maximum Ratings TC=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
VGS
Gate-Source Voltage
TC=25°C
Continuous Drain
Current B,H
C
Avalanche Current C
Repetitive avalanche energy L=0.1mH
TC=25°C
Power Dissipation B
C
A
TA=70°C
1/6
D,F
IDM
-115
IAR
-42
mJ
88
31
W
2.5
1.6
TJ, TSTG
-55 to 175
Symbol
t ≤ 10s
Steady-State
Steady-State
A
62.5
PDSM
Junction and Storage Temperature Range
Maximum Junction-to-Case
V
-31
PD
TC=100°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,G
A,G
Maximum Junction-to-Ambient
±20
ID
EAR
TA=25°C
Power Dissipation
Units
V
-40
TC=100°C
Pulsed Drain Current
Maximum
-40
RθJA
RθJC
Typ
15
41
2
°C
Max
20
50
2.4
Units
°C/W
°C/W
°C/W
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AOD4185/AOI4185
P-Channel Enhancement Mode Field
Effect Transistor
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-40
-1
TJ=55°C
-5
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.7
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-115
±100
VGS=-10V, ID=-20A
Static Drain-Source On-Resistance
TJ=125°C
50
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
Gate resistance
VGS=0V, VDS=-20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg (-10V) Total Gate Charge
Qg (-4.5V) Total Gate Charge
Qgs
Gate Source Charge
VGS=-10V, VDS=-20V,
ID=-20A
2.5
µA
nA
V
mΩ
S
-0.72
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Units
A
20
IS
Rg
15
23
VSD
Reverse Transfer Capacitance
12.5
16
VDS=-5V, ID=-20A
Output Capacitance
-3
19
Forward Transconductance
Crss
-1.9
VGS=-4.5V, ID=-15A
gFS
Coss
Max
V
VDS=-40V, VGS=0V
VGS(th)
RDS(ON)
Typ
-1
V
-20
A
2550
pF
280
pF
190
pF
4
6
Ω
42
55
nC
18.6
7
nC
Qgd
Gate Drain Charge
8.6
nC
tD(on)
Turn-On DelayTime
9.4
ns
tr
Turn-On Rise Time
20
ns
tD(off)
Turn-Off DelayTime
55
ns
tf
trr
Body Diode Reverse Recovery Time
IF=-20A, dI/dt=100A/µs
38
Qrr
Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/µs
47
VGS=-10V, VDS=-20V, RL=1Ω,
RGEN=3Ω
Turn-Off Fall Time
30
ns
49
ns
nC
A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM are
based on TJ(MAX)=150°C, using steady state junction-to-ambient thermal resistance.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
TBD
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
TBD
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment
with TA=25°C.
H. The maximum current rating is limited by bond-wires.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev4: April, 2012
2/6
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AOD4185/AOI4185
P-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
120
VDS=-5V
-6.0V
-10V
100
-4.5V
80
80
-ID(A)
-ID (A)
60
-4.0V
60
40
40
`
125°C
VGS=-3.5V
20
20
25°
0
0
0
1
2
3
4
1.5
5
-VDS (Volts)
Figure 1: On-Region Characteristics
22
1.8
RDS(ON) (mΩ
Ω)
Normalized On-Resistance
2
VGS=-4.5V
18
16
14
VGS=-10V
12
10
3.5
4
4.5
5
VGS=-10V
ID=-20A
1.6
1.4
VGS=-4.5V
ID=-15A
1.2
1
0.8
10
20
30
40
50
60
-50 -25
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
0
25
50
75 100 125 150 175 200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
45
150
ID=-20A
40
10
35
1
30
0.1
25
-IS (A)
RDS(ON) (mΩ
Ω)
3
0.6
0
125°C
mJ
125°C
0.01
25°C
20
0.001
25°C
15
0.0001
10
3
4
5
6
7
8
9
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
3/6
2.5
-VGS(Volts)
Figure 2: Transfer Characteristics
24
20
2
0.00001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics
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AOD4185/AOI4185
P-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3500
10
VDS=-20V
ID=-20A
3000
Ciss
Capacitance (pF)
-VGS (Volts)
8
6
4
2500
2000
1500
1000
Crss
2
Coss
500
0
0
0
5
10
15
20
25
30
35
40
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
45
5
10
15
20
25
30
35
40
-VDS (Volts)
Figure 8: Capacitance Characteristics
10000
1000
TJ(Max)=175°
C
10µs
RDS(ON)
limited
100µs
10
1ms
10ms
1
Power (W)
-ID (Amps)
100
1000
100
DC
TJ(Max)=175°C
TC=25°C
0.1
0.1
10
1
10
100
0.00001
-VDS (Volts)
10
Zθ Jc Normalized Transient
Thermal Resistance
0.001
0.01
0.1
1
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
D=Ton/T
TJ,PK=Tc+PDM.ZθJC.RθJC
RθJC=2.4°C/W
0.0001
150
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
mJ
1
PD
0.1
Ton
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/6
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AOD4185/AOI4185
P-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
70
40
-Current rating ID (A)
Power Dissipation (W)
60
50
40
30
20
30
20
10
10
0
0
0
25
50
75
100
125
150
175
0
25
TCASE (°
°C)
Figure 12: Power De-rating (Note B)
50
75
100
125
150
175
TCASE (°
°C)
Figure 13: Current De-rating (Note B)
10000
TJ(Max)=150°
C
Power (W)
1000
100
10
1
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
Zθ JA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
150
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
Single Pulse
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
5/6
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AOD4185/AOI4185
P-Channel Enhancement Mode Field
Effect Transistor
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgs
Vds
Qgd
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
td(on)
Vgs
-
DUT
Vgs
td(off)
tr
tf
90%
Vdd
VDC
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
EAR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
6/6
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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