Transistors SMD Type Product specification 2SC4600 TO-263 1 .2 7 -0+ 0.1.1 Features Unit: mm Surface mount type device making the following possible. +0.1 1.27-0.1 +0.2 4.57-0.2 Reduction in the number of manufacturing processes Small size of 2SC4600-applied equipment. 5 .2 8 -0+ 0.2.2 High breakdown voltage, high reliability. 0.1max +0.1 1.27-0.1 Fast switching speed. Wide ASO. +0.1 0.81-0.1 2.54 +0.2 2.54-0.2 Adoption of MBIT process. 5.08 1 5 .2 5 -0+ 0.2.2 High density surface mount applications. 2 .5 4 -0+ 0.2.2 8 .7 -0+ 0.2.2 5 .6 0 for 2SC4600-applied equipment. 1,Base +0.2 0.4-0.2 +0.1 -0.1 2,Collector 3,Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 800 V Collector-emitter voltage VCEO 500 V Emitter-base voltage VEBO 7 V Collector current ( DC) IC 5 Collector current (Pulse) * ICP 10 Base current IB 2 Collector power dissipation Ta = 25 PC Storage temperature range * PW A W 50 TC = 25 Junction temperature 1.65 A Tj 150 Tstg -55 to +150 300ms, duty cycle 10% http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors SMD Type Product specification 2SC4600 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cut-off current ICBO VCB = 500 V, IE = 0 10 ìA Emitter cut-off current IEBO VEB = 5 V, IC = 0 10 ìA DC current gain hFE Gain-Bandwidth product fT VCE = 5 V, IC = 0.6A 15 VCE = 5 V, IC = 3A 8 50 VCE = 10 V, IC =0.6A 18 80 MHz Cob VCB=10V,f=1MHz Collector-emitter saturation voltage VCE (sat) IC = 3 A, IB = 0.6 A 1.0 V Base-emitter saturation voltage VBE (sat) IC =3 A, IB = 0.6 A 1.5 V Output Capacitance pF Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IE = 0 800 V Collector-emitter breakdown voltage V (BR) CEO IC = 5 mA,RBE= 500 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=1mA,IC=0 7 V VCEO(SUS) IC=5A,IB1=1A,L=50ìH 500 V VCEX(SUS) IC=2.5A,IB1=-IB2=1A,L=1mH 500 Collector-to-Emitter Sustain Voltage Turn-ON time ton Storage time 0.5 IC=4A,IB1=0.8A,IB2=-1.6A,RL=50 Ù,VCC=200V tstg Fall time 3.0 tf ìs 0.3 Switching Time Test Circuit hFE Classification Rank L M N hFE 15 to 30 20 to 40 30 to 50 http://www.twtysemi.com [email protected] 4008-318-123 2of 2