Transistors SMD Type Silicon NPN Triple Diffused Type 2SC4597 Features TO-263 Surface mount type device making the following possible. 1 .2 7 -0+ 0.1.1 Reduction in the number of manufacturing processes Unit: mm for 2SC4597-applied equipment. +0.1 1.27-0.1 +0.2 4.57-0.2 High density surface mount applications. 5 .2 8 -0+ 0.2.2 Wide ASO. 0.1max +0.1 1.27-0.1 Fast switching speed. Adoption of MBIT process. +0.1 0.81-0.1 2.54 +0.2 2.54-0.2 5.08 1 5 .2 5 -0+ 0.2.2 High breakdown voltage, high reliability. 2 .5 4 -0+ 0.2.2 8 .7 -0+ 0.2.2 5 .6 0 Small size of 2SC4597-applied equipment. 1,Base +0.2 0.4-0.2 +0.1 -0.1 2,Collector 3,Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 500 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7 V Collector current ( DC) IC 4 Collector current (Pulse) * ICP 8 Base current IB 1.5 Collector power dissipation Ta = 25 PC Storage temperature range * PW A W 40 TC = 25 Junction temperature 1.65 A Tj 150 Tstg -55 to +150 300ms, duty cycle 10% www.kexin.com.cn 1 Transistors SMD Type 2SC4597 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Typ Max Unit Collector cut-off current ICBO VCB = 400 V, IE = 0 10 ìA Emitter cut-off current IEBO VEB = 5 V, IC = 0 10 ìA VCE = 5 V, IC = 0.4A DC current gain hFE 15 VCE = 5 V, IC = 2A 10 VCE = 5 V, IC =10mA 10 50 VCE = 10 V, IC =0.4A 20 MHz Cob VCB=10V,f=1MHz 50 pF Collector-emitter saturation voltage VCE (sat) IC = 2 A, IB = 0.4 A 0.8 V Base-emitter saturation voltage VBE (sat) IC = 2 A, IB = 0.4 A 1.5 V Gain-Bandwidth product fT Output Capacitance Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IE = 0 500 V 400 V Collector-emitter breakdown voltage V (BR) CEO IC = 5 mA,RBE= Emitter-to-Base Breakdown Voltage V(BR)EBO IE=1mA,IC=0 Collector-to-Emitter Sustain Voltage VCEX(SUS) IC=2A,IB1=0.2A,L=1mH,IB2=-0.8A Turn-ON time ton Storage time 400 2.5 0.3 tf Switching Time Test Circuit hFE Classification Rank L M N hFE 15 to 30 20 to 40 30 to 50 www.kexin.com.cn 7 0.5 IC=3A,IB1=0.6A,IB2=-1.2A,RL=66.6 Ù,VCC=200V tstg Fall time 2 Min ìs