Product specification N-channel enhancement mode MOS transistor FEATURES BSH105 SYMBOL • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package QUICK REFERENCE DATA VDS = 20 V d ID = 1.05 A RDS(ON) ≤ 250 mΩ (VGS = 2.5 V) g VGS(TO) ≥ 0.4 V s GENERAL DESCRIPTION N-channel, enhancement mode, logic level, field-effect power transistor. This device has very low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. PINNING SOT23 PIN DESCRIPTION 1 gate 2 source 3 drain 3 Top view The BSH105 is supplied in the SOT23 subminiature surface mounting package. 1 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS VDS VDGR VGS ID Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) RGS = 20 kΩ IDM Ptot Drain current (pulse peak value) Total power dissipation Tstg, Tj Storage & operating temperature Ta = 25 ˚C Ta = 100 ˚C Ta = 25 ˚C Ta = 25 ˚C Ta = 100 ˚C MIN. MAX. UNIT - 55 20 20 ±8 1.05 0.67 4.2 0.417 0.17 150 V V V A A A W W ˚C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Rth j-a Thermal resistance junction to ambient FR4 board, minimum footprint 300 - K/W http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Product specification N-channel enhancement mode MOS transistor BSH105 ELECTRICAL CHARACTERISTICS Tj= 25˚C unless otherwise specified SYMBOL PARAMETER V(BR)DSS VGS(TO) CONDITIONS Drain-source breakdown voltage Gate threshold voltage MIN. VGS = 0 V; ID = 10 µA VDS = VGS; ID = 1 mA Tj = 150˚C RDS(ON) gfs IGSS IDSS Drain-source on-state resistance VGS = 4.5 V; ID = 0.6 A VGS = 2.5 V; ID = 0.6 A VGS = 1.8 V; ID = 0.3 A VGS = 2.5 V; ID = 0.6 A; Tj = 150˚C Forward transconductance VDS = 16 V; ID = 0.6 A Gate source leakage current VGS = ±8 V; VDS = 0 V Zero gate voltage drain VDS = 16 V; VGS = 0 V; current Tj = 150˚C TYP. MAX. UNIT 20 - - V 0.4 0.1 0.5 - 0.57 140 180 240 270 1.6 10 50 1.3 200 250 300 375 100 100 10 V V mΩ mΩ mΩ mΩ S nA nA µA Qg(tot) Qgs Qgd Total gate charge Gate-source charge Gate-drain (Miller) charge ID = 1 A; VDD = 20 V; VGS = 4.5 V - 3.9 0.4 1.4 - nC nC nC td on tr td off tf Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time VDD = 20 V; ID = 1 A; VGS = 8 V; RG = 6 Ω Resistive load - 2 4.5 45 20 - ns ns ns ns Ciss Coss Crss Input capacitance Output capacitance Feedback capacitance VGS = 0 V; VDS = 16 V; f = 1 MHz - 152 71 33 - pF pF pF REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tj = 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS IDR IDRM VSD Continuous reverse drain current Pulsed reverse drain current Diode forward voltage trr Qrr Reverse recovery time Reverse recovery charge http://www.twtysemi.com MIN. TYP. MAX. UNIT Ta = 25 ˚C - - 1.05 A IF = 0.5 A; VGS = 0 V - 0.74 4.2 1 A V IF = 0.5 A; -dIF/dt = 100 A/µs; VGS = 0 V; VR = 16 V - 27 19 - ns nC [email protected] 4008-318-123 2 of 2