TYSEMI BSH105

Product specification
N-channel enhancement mode
MOS transistor
FEATURES
BSH105
SYMBOL
• Very low threshold voltage
• Fast switching
• Logic level compatible
• Subminiature surface mount
package
QUICK REFERENCE DATA
VDS = 20 V
d
ID = 1.05 A
RDS(ON) ≤ 250 mΩ (VGS = 2.5 V)
g
VGS(TO) ≥ 0.4 V
s
GENERAL DESCRIPTION
N-channel, enhancement mode,
logic level, field-effect power
transistor. This device has very low
threshold voltage and extremely
fast switching making it ideal for
battery powered applications and
high speed digital interfacing.
PINNING
SOT23
PIN
DESCRIPTION
1
gate
2
source
3
drain
3
Top view
The BSH105 is supplied in the
SOT23
subminiature
surface
mounting package.
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
VDS
VDGR
VGS
ID
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
RGS = 20 kΩ
IDM
Ptot
Drain current (pulse peak value)
Total power dissipation
Tstg, Tj
Storage & operating temperature
Ta = 25 ˚C
Ta = 100 ˚C
Ta = 25 ˚C
Ta = 25 ˚C
Ta = 100 ˚C
MIN.
MAX.
UNIT
- 55
20
20
±8
1.05
0.67
4.2
0.417
0.17
150
V
V
V
A
A
A
W
W
˚C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Rth j-a
Thermal resistance junction to
ambient
FR4 board, minimum
footprint
300
-
K/W
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[email protected]
4008-318-123
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Product specification
N-channel enhancement mode
MOS transistor
BSH105
ELECTRICAL CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER
V(BR)DSS
VGS(TO)
CONDITIONS
Drain-source breakdown
voltage
Gate threshold voltage
MIN.
VGS = 0 V; ID = 10 µA
VDS = VGS; ID = 1 mA
Tj = 150˚C
RDS(ON)
gfs
IGSS
IDSS
Drain-source on-state
resistance
VGS = 4.5 V; ID = 0.6 A
VGS = 2.5 V; ID = 0.6 A
VGS = 1.8 V; ID = 0.3 A
VGS = 2.5 V; ID = 0.6 A; Tj = 150˚C
Forward transconductance
VDS = 16 V; ID = 0.6 A
Gate source leakage current VGS = ±8 V; VDS = 0 V
Zero gate voltage drain
VDS = 16 V; VGS = 0 V;
current
Tj = 150˚C
TYP. MAX. UNIT
20
-
-
V
0.4
0.1
0.5
-
0.57
140
180
240
270
1.6
10
50
1.3
200
250
300
375
100
100
10
V
V
mΩ
mΩ
mΩ
mΩ
S
nA
nA
µA
Qg(tot)
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
ID = 1 A; VDD = 20 V; VGS = 4.5 V
-
3.9
0.4
1.4
-
nC
nC
nC
td on
tr
td off
tf
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
VDD = 20 V; ID = 1 A;
VGS = 8 V; RG = 6 Ω
Resistive load
-
2
4.5
45
20
-
ns
ns
ns
ns
Ciss
Coss
Crss
Input capacitance
Output capacitance
Feedback capacitance
VGS = 0 V; VDS = 16 V; f = 1 MHz
-
152
71
33
-
pF
pF
pF
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
IDR
IDRM
VSD
Continuous reverse drain
current
Pulsed reverse drain current
Diode forward voltage
trr
Qrr
Reverse recovery time
Reverse recovery charge
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MIN.
TYP.
MAX.
UNIT
Ta = 25 ˚C
-
-
1.05
A
IF = 0.5 A; VGS = 0 V
-
0.74
4.2
1
A
V
IF = 0.5 A; -dIF/dt = 100 A/µs;
VGS = 0 V; VR = 16 V
-
27
19
-
ns
nC
[email protected]
4008-318-123
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