RoHS C945 C945 TRANSISTOR (NPN) TO-92 FEATURES Power dissipation PCM: Collector current ICM: 0.4 1. EMITTER W (Tamb=25℃) 2. COLLECTOR 0.15 A 3. BASE Collector-base voltage V (BR) CBO: 60 V 1 2 3 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=1mA, IE=0 60 V Collector-emitter voltage V(BR)CEO IC=100uA , IB=0 50 V V(BR)EBO IE=100µA, IC=0 5 V Collector cut-off current ICBO VCB=60V, IE=0 0.1 µA Collector cut-off current ICEO VCE=45V 0.1 µA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 µA hFE(1) VCE=6V, IC=1mA 70 hFE(2) VCE=6V, IC=0.1mA 40 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=100mA, IB=10mA 1 V fT VCE=6V, IC=10mA, f =30 MHz Collector output capacitance Cob VCB=10V, IE=0, f=1MHZ Noise figure NF VCE=6V, IC=0.1mA Rg=10kΩ, f=1kMHZ breakdown Emitter-base breakdown voltage 700 DC current gain Transition frequency 200 MHz 4 3.0 pF 10 dB CLASSIFICATION OF hFE(1) Rank Range O Y GP 70-140 120-240 200-400 WEJ ELECTRONIC CO.,LTDHttp:// www.wej.cn BL 350-700 E-mail:[email protected]