RoHS 2SB1188 2SB1188 FEATURES Power dissipation PCM: 0.5 Collector current ICM: -2 Collector-base voltage V(BR)CBO: D T ,. L SOT-89 TRANSISTOR (PNP) 1. BASE W (Tamb=25℃) 2. COLLECTOR1 2 A -40 V Operating and storage junction temperature range IC TJ, Tstg: -55℃ to +150℃ N O 3 3. EMITTER C ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter R T Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage Emitter-base breakdown voltage C E L Collector cut-off current Emitter cut-off current DC current gain * E Collector-emitter saturation voltage * J E Transition frequency O Symbol Output capacitance Test conditions MIN MAX UNIT Ic=-50µA , IE=0 -40 V V(BR)CEO IC= -1mA , IB=0 -32 V V(BR)EBO IE=-50µA, IC=0 -5 V ICBO VCB=-20 V , IE=0 -1 µA IEBO VEB=-4 V , -1 µA IC=0 hFE VCE=-3V, IC= -0.5A VCe(sat) IC=-2A, IB= -0.2A fT VCE=-5V, IC=-0.5A ,f=30MHz Cob VCB=-10V, IE=0 ,f=1MHz 82 390 -0.8 80 MHz 65 * Measured using pulse current. W CLASSIFICATION OF hFE Rank Range Marking p Q R 82-180 120-270 180-390 BCP BCQ BCR WEJ ELECTRONIC CO. Http:// www.wej.cn V E-mail:[email protected] pF