2SC536 2SC536 TRANSISTOR (NPN) TO-92 FEATURES 1. EMITTER Power dissipation PCM: 2. COLLECTOR 400 mW (Tamb=25℃) Collector current ICM: 100 mA Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=100µA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO Ic=1mA, IB=0 30 V Emitter-Base breakdown voltage V(BR)EBO IE=100µA, IC=0 5 V Collector cut-off current ICBO VCB=35V, IE=0 1 µA Emitter cut-off current IEBO VEB=4V, IC=0 1 µA DC current gain hFE VCE=6V, IC=1mA VCE(sat) IC=50mA, IB=5mA fT VCE=6V, IC=1mA 100 MHz Cob VCE=6V, f=1MHz 3.5 pF Collector-emitter saturation voltage Transition frequency Collector output capacitance 60 960 0.5 V CLASSIFICATION OF hFE Rank Range D E F G H 60-120 100-200 160-320 280-560 480-960 WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]