ISL9H2060EG3 Data Sheet Title L9 060 3) bjec 0V, MPS LGC ries ann BT h tialle 600V, SMPS II LGC Series N-Channel IGBT with Anti-Parallel StealthTM Diode The ISL9H2060EG3 is a Low Gate Charge (LGC) SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for: • Power Factor Correction (PFC) Circuits • Full Bridge Topologies • Half Bridge Topologies • Push-Pull Circuits • Uninterruptible Power Supplies • Zero Voltage and Zero Current Switching Circuits • 200kHz Operation at 390V, 9A • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . . .75ns at TJ = 125oC • Low Gate Charge . . . . . . . . . . . . . . . . .37nC at VGE = 15V • UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .260mJ • Low Conduction Loss Symbol C G E PACKAGE TO-247 5020 • >100kHz Operation at 390V, 20A Ordering Information ISL9H2060EG3 File Number Features Formerly Developmental Type TA49340. PART NUMBER alth M ode) utho January 2001 BRAND H2060EG3 Packaging eyw s 0V, MPS LGC ries JEDEC STYLE TO-247 E C G COLLECTOR ann BT h tialle alth M (FLANGE) INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 ©2001 Fairchild Semiconductor Corporation 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 ISL9H2060EG3 Rev. A ISL9H2060EG3 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 600 UNITS V 75 A At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA Single Pulse Avalanche Energy at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 35 180 A A ±20 ±30 100A at 600V 260mJ at 20A 290 V V W 2.33 -55 to 150 W/oC oC 300 260 oC oC Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. Pulse width limited by maximum junction temperature. Electrical Specifications TJ = 25oC, Unless Otherwise Specified PARAMETER Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Pulsed Avalanche Energy Gate to Emitter Plateau Voltage On-State Gate Charge Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time SYMBOL BVCES ICES VCE(SAT) VGE(TH) IC = 250µA, VGE = 0V VCE = 600V IC = 20A, VGE = 15V TJ = 25oC TJ = 125oC TJ = 25oC TJ = 125oC IC = 250µA, VCE = 600V MIN TYP MAX UNITS 600 - - V - - 100 µA - - 2.0 mA - 1.9 2.7 V - 1.7 2.0 V 4.5 6.6 7.0 V IGES VGE = ±20V - - ±250 nA SSOA TJ = 150oC, RG = 3Ω, VGE = 15V L = 100µH, VCE = 600V 100 - - A EAS ICE = 20A, L = 2.1mH, VDD = 50V 260 - - mJ - 9.3 - V VGE = 15V - 37 46 nC VGE = 20V - 46 58 nC - 10 - ns - 17 - ns - 39 - ns VGEP Qg(ON) td(ON)I trI td(OFF)I tfI IC = 20A, VCE = 300V IC = 20A, VCE = 300V IGBT and Diode at TJ = 25oC ICE = 20A VCE = 390V VGE = 15V RG = 3 Ω - 44 - ns - 105 - µJ EON2 - 200 - µJ EOFF - 210 - µJ Turn-On Energy (Note 2) EON1 Turn-On Energy (Note 2) Turn-Off Energy (Note 3) ©2001 Fairchild Semiconductor Corporation TEST CONDITIONS L = 200µH Test Circuit - Figure 26 ISL9H2060EG3 Rev. A ISL9H2060EG3 Electrical Specifications TJ = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL Current Turn-On Delay Time td(ON)I Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time tfI TEST CONDITIONS IGBT and Diode at TJ = 125oC ICE = 20A VCE = 390V VGE = 15V RG = 3 Ω L = 200µH Test Circuit - Figure 26 MIN TYP MAX UNITS - 12 - ns - 15 - ns - 65 100 ns - 75 85 ns - 115 - µJ Turn-On Energy (Note 2) EON1 Turn-On Energy (Note 2) EON2 - 360 430 µJ Turn-Off Energy (Note 3) EOFF - 380 490 µJ Diode Forward Voltage VEC Diode Reverse Recovery trr Thermal Resistance Junction To Case RθJC IEC = 20A - 2.1 2.5 V IEC = 1A, dIEC/dt = 200A/µs, VCE = 30V - 30 35 ns IEC = 20A, dIEC/dt = 200A/µs, VCE = 30V - 39 48 ns IGBT - - 0.43 oC/W Diode - - 1.25 oC/W NOTES: 2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E ON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T J as the IGBT. The diode type is specified in Figure 26. 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Unless Otherwise Specified ICE , DC COLLECTOR CURRENT (A) 80 PACKAGE LIMITED 75A VGE = 15V TJ = 150oC 70 60 50 40 30 20 10 0 25 50 75 100 125 TC , CASE TEMPERATURE (oC) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE ©2001 Fairchild Semiconductor Corporation 150 ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 125 TJ = 150oC, RG = 3Ω, VGE = 15V 100 75 50 25 0 0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA ISL9H2060EG3 Rev. A ISL9H2060EG3 fMAX, OPERATING FREQUENCY (kHz) 1000 TC TC VGE VGE 75oC 15V 75oC 12V 100 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RØJC = 0.43oC/W, SEE NOTES 10 TJ = 125oC, RG = 3Ω, L = 200µH, V CE = 390V 1 1 10 20 30 50 70 9.5 9.0 8.5 225 tSC 8.0 175 7.0 10 11 30 TJ = 150oC 20 TJ = 125oC TJ = 25oC 5 0 0 0.4 1.2 0.8 2.0 1.6 2.4 DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250µs 35 30 25 TJ = 150oC 20 15 TJ = 125oC 10 5 0 TJ = 25oC 0 1000 EOFF , TURN-OFF ENERGY LOSS (µJ) EON2 , TURN-ON ENERGY LOSS (µJ) RG = 3Ω, VCE = 390V 1400 1200 1000 TJ = 125oC, VGE = 15V 600 TJ = 25oC, VGE = 15V 200 0 TJ = 25oC, VGE = 12V 0 5 10 15 20 25 30 0.6 0.8 1.0 1.2 1.4 1.6 2.0 1.8 2.2 RG = 3Ω, VCE = 390V 900 800 TJ = 125oC, VGE = 12V OR 15V 700 600 500 400 300 200 TJ = 25oC, VGE = 12V OR 15V 100 0 35 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT ©2001 Fairchild Semiconductor Corporation 0.4 FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE 1600 TJ = 125oC, VGE = 12V 0.2 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE 400 150 15 14 40 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 800 13 FIGURE 4. SHORT CIRCUIT WITHSTAND TIME ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) DUTY CYCLE < 0.5%, VGE = 12V PULSE DURATION = 250µs 10 12 VGE , GATE TO EMITTER VOLTAGE (V) 40 15 200 7.5 FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT 25 250 ISC ICE, COLLECTOR TO EMITTER CURRENT (A) 35 275 VCE = 390V, RG = 3Ω, TJ = 125oC ISC, PEAK SHORT CIRCUIT CURRENT (A) Unless Otherwise Specified (Continued) tSC , SHORT CIRCUIT WITHSTAND TIME (µs) Typical Performance Curves 40 0 5 10 15 20 25 30 35 40 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT ISL9H2060EG3 Rev. A ISL9H2060EG3 Typical Performance Curves Unless Otherwise Specified (Continued) 70 RG = 3Ω, VCE = 390V RG = 3Ω, VCE = 390V 60 TJ = 125oC, TJ = 25oC, VGE = 12V 16 trI , RISE TIME (ns) td(ON)I, TURN-ON DELAY TIME (ns) 18 14 12 10 8 6 50 40 20 10 TJ = 125oC, TJ = 25oC, VGE = 15V 0 0 5 10 15 20 30 25 35 TJ = 25oC OR TJ = 125oC, VGE = 12V 30 40 TJ = 25oC OR TJ = 125oC, VGE = 15V 0 ICE , COLLECTOR TO EMITTER CURRENT (A) 20 25 30 35 40 90 RG = 3Ω, VCE = 390V RG = 3Ω, VCE = 390V 65 80 60 tfI , FALL TIME (ns) td(OFF)I , TURN-OFF DELAY TIME (ns) 15 FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT 70 55 TJ = 125oC, VGE = 15V, VGE = 12V 50 45 TJ = 25oC, VGE = 15V, VGE = 12V 40 70 TJ = 125oC, VGE = 12V OR 15V 60 50 TJ = 25oC, VGE = 12V OR 15V 40 30 35 0 5 10 15 20 25 30 35 20 40 0 FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT VGE, GATE TO EMITTER VOLTAGE (V) DUTY CYCLE < 0.5%, VCE = 10V PULSE DURATION = 250µs 125 100 75 TJ = 125oC 50 TJ = 25oC TJ = -40oC 25 0 5 6 7 8 9 10 11 12 VGE, GATE TO EMITTER VOLTAGE (V) FIGURE 13. TRANSFER CHARACTERISTIC ©2001 Fairchild Semiconductor Corporation 10 15 20 25 30 35 40 FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT 16 150 5 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 10 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT 30 5 13 IG(REF) = 1mA, RL = 15Ω, TJ = 25oC 14 VCE = 400V 12 VCE = 200V VCE = 600V 10 8 6 4 2 0 0 5 10 15 20 25 30 35 40 QG , GATE CHARGE (nC) FIGURE 14. GATE CHARGE WAVEFORMS ISL9H2060EG3 Rev. A ISL9H2060EG3 Unless Otherwise Specified (Continued) 2400 2200 RG = 3W, VCE = 390V, VGE = 15V 2000 ETOTAL = EON2 + EOFF 1800 ICE = 40A 1600 1400 1200 1000 ICE = 20A 800 600 400 ICE = 10A 200 0 25 50 75 125 100 150 ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) ETOTAL, TOTAL SWITCHING ENERGY LOSS (µJ) Typical Performance Curves 100 TJ = 125oC, VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF 10 ICE = 40A ICE = 20A 1 ICE = 10A 0.1 1 10 TC , CASE TEMPERATURE (oC) 2.25 FREQUENCY = 1MHz C, CAPACITANCE (nF) 2.00 CIES 1.50 1.25 1.00 COES 0.75 0.50 CRES 0.25 0 0 10 20 30 50 40 60 70 80 90 100 FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 15. TOTAL SWITCHING LOSS vs CASE TEMPERATURE 1.75 3.6 DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250µs, TJ = 25oC 3.4 3.2 ICE = 40A 3.0 2.8 ICE = 20A 2.6 2.4 ICE = 15A 2.2 2.0 1.8 1.6 ICE = 10A 9 10 VCE, COLLECTOR TO EMITTER VOLTAGE (V) trr , REVERSE RECOVERY TIMES (ns) IEC , FORWARD CURRENT (A) 35 30 125oC 25oC 20 15 10 5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 VEC , FORWARD VOLTAGE (V) FIGURE 19. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP ©2001 Fairchild Semiconductor Corporation 14 15 16 17 18 19 20 250 40 25 13 12 FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE vs GATE TO EMITTER VOLTAGE DUTY CYCLE < 0.5%, PULSE DURATION = 250µs 45 11 VGE, GATE TO EMITTER VOLTAGE (V) FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE 50 1000 100 RG, GATE RESISTANCE (Ω) 3.5 125oC trr dIEC/dt = 200A/µs, VCE = 390V 200 125oC tb 150 25oC trr 100 25oC tb 125oC ta 50 25oC ta 0 2 4 6 8 10 12 14 16 18 20 IEC , FORWARD CURRENT (A) FIGURE 20. REVERSE RECOVERY TIMES vs DIODE FORWARD CURRENT ISL9H2060EG3 Rev. A ISL9H2060EG3 Typical Performance Curves Unless Otherwise Specified (Continued) Qrr , REVERSE RECOVERY CHARGE (nC) trr , REVERSE RECOVERY TIMES (ns) 200 IEC = 20A, VCE = 390V 175 125oC tb 150 125 25oC tb 100 75 125oC ta 50 25 0 200 25oC ta 300 400 500 600 700 800 900 1000 900 VCE = 390V 125oC, IEC = 20A 800 700 600 125oC, IEC = 10A 500 25oC, IEC = 20A 400 25oC, IEC = 10A 300 200 100 200 300 400 500 600 700 800 900 1000 FIGURE 21. REVERSE RECOVERY TIMES vs RATE OF CHANGE OF CURRENT FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF CURRENT IRRM, MAX REVERSE RECOVERY CURRENT (A) dIEC/dt, RATE OF CHANGE OF CURRENT (A/µs) S, REVERSE RECOVERY SOFTNESS FACTOR dIEC/dt, RATE OF CHANGE OF CURRENT (A/µs) 6 VCE = 390V, TJ = 125oC 5 IEC = 20A 4 3 IEC = 10A 2 1 0 200 300 400 500 600 700 800 900 1000 18 VCE = 390V, TJ = 125oC 16 14 IEC = 10A 12 10 8 6 4 200 300 400 500 600 700 800 900 1000 dIEC/dt, CURRENT RATE OF CHANGE (A/µs) dIEC/dt, CURRENT RATE OF CHANGE (A/µs) FIGURE 23. REVERSE RECOVERY SOFTNESS FACTOR vs RATE OF CHANGE OF CURRENT ZθJC , NORMALIZED THERMAL RESPONSE IEC = 20A FIGURE 24. MAXIMUM REVERSE RECOVERY CURRENT vs RATE OF CHANGE OF CURRENT 100 0.5 0.2 t1 0.1 10-1 PD 0.05 t2 0.02 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC 0.01 SINGLE PULSE 10-2 10-5 10-4 10-3 10-2 10-1 100 101 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 25. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE ©2001 Fairchild Semiconductor Corporation ISL9H2060EG3 Rev. A ISL9H2060EG3 Test Circuit and Waveforms ISL9H2060EG3 90% 10% VGE EON2 EOFF L = 200µH VCE RG = 3Ω 90% ICE + ISL9H2060EG3 - VDD = 390V FIGURE 26. INDUCTIVE SWITCHING TEST CIRCUIT 10% td(OFF)I tfI trI td(ON)I FIGURE 27. SWITCHING TEST WAVEFORMS Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 27. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM . fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC . The sum of device switching and conduction losses must not exceed PD . A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 27. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. ©2001 Fairchild Semiconductor Corporation ISL9H2060EG3 Rev. A ISL9H2060EG3 TO-247 3 LEAD JEDEC STYLE TO-247 PLASTIC PACKAGE A E ØS Q ØR D L1 b1 b2 L c b 2 1 3 3 e e1 J1 INCHES TERM. 4 ØP MILLIMETERS SYMBOL MIN MAX MIN MAX A 0.180 0.190 4.58 4.82 NOTES - b 0.046 0.051 1.17 1.29 2, 3 b1 0.060 0.070 1.53 1.77 1, 2 b2 0.095 0.105 2.42 2.66 1, 2 c 0.020 0.026 0.51 0.66 1, 2, 3 D 0.800 0.820 20.32 20.82 - E 0.605 0.625 15.37 15.87 - e 0.219 TYP 5.56 TYP 4 e1 0.438 BSC 11.12 BSC 4 J1 0.090 0.105 2.29 2.66 1 L 0.620 0.640 15.75 16.25 - BACK VIEW L1 0.145 0.155 3.69 3.93 1 ØP 0.138 0.144 3.51 3.65 - Q 0.210 0.220 5.34 5.58 - ØR 0.195 0.205 4.96 5.20 - ØS 0.260 0.270 6.61 6.85 - 2 5 NOTES: 1. Lead dimension and finish uncontrolled in L1. 2. Lead dimension (without solder). 3. Add typically 0.002 inches (0.05mm) for solder coating. 4. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D. 5. Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D. 6. Controlling dimension: Inch. 7. Revision 1 dated 1-93. ©2001 Fairchild Semiconductor Corporation ISL9H2060EG3 Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ Star* Power™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ UltraFET VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H1