H7N0308LD, H7N0308LS, H7N0308LM Silicon N Channel MOS FET High Speed Power Switching ADE-208-1535C (Z) 4th. Edition Aug. 2002 Features • Low on-resistance RDS(on) = 3.8 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 4 D 1 G 1 S 2 2 3 H7N0308LS 3 H7N0308LD 1 2 3 H7N0308LM 1. Gate 2. Drain 3. Source 4. Drain H7N0308LD, H7N0308LS, H7N0308LM Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS ±20 V Drain current ID 70 A 280 A 70 A 100 W 1.25 °C/W Channel to ambient thermal impedance θch-a 89 °C/W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note 1 Drain peak current ID(pulse) Body-drain diode reverse drain current IDR Channel dissipation Pch Channel to case thermal impedance θch-c Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Rev.3, Aug. 2002, page 2 of 11 Note 2 H7N0308LD, H7N0308LS, H7N0308LM Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions V ID = 10 mA, VGS = 0 Drain to source breakdown voltage V(BR)DSS 30 — — Gate to source breakdown voltage V(BR)GSS ±20 — — Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 Zero gate voltege drain current IDSS — — 10 µA VDS = 30 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.0 — 2.5 V ID = 1 mA, VDS = 10 V Static drain to source on state RDS(on) — 3.8 4.8 mΩ ID = 35 A, VGS = 10 V — 6.0 8.5 mΩ ID = 35 A, VGS = 4.5 V resistance IG = ±100 µA, VDS = 0 Forward transfer admittance |yfs| 54 90 — S ID = 35 A, VDS = 10 V Input capacitance Ciss — 3350 — pF VDS = 10 V Output capacitance Coss — 840 — pF VGS = 0 Reverse transfer capacitance Crss — 480 — pF f = 1MHz Total gate charge Qg — 52 — nc VDD = 10 V Gate to source charge Qgs — 11 — nc VGS = 10 V Gate to drain charge Qgd — 10 — nc ID = 70 A Turn-on delay time td(on) — 30 — ns VGS = 10 V, ID = 35 A Rise time tr — 370 — ns RL =0.29 Ω Turn-off delay time td(off) — 80 — ns Rg =4.7 Ω Fall time tf — 27 — ns Body–drain diode forward voltage VDF — 0.93 — V IF = 70 A, VGS = 0 — 60 — ns IF = 70 A, VGS = 0 diF/ dt =50 A/µs Body–drain diode reverse recovery trr time Note 1 Note 1 Note 1 Note 1 Notes: 1. Pulse test Rev.3, Aug 2002, page 3 of 11 H7N0308LD, H7N0308LS, H7N0308LM Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area ID (A) 500 120 80 40 10 Op 0µ s era tio PW n = 10 ms 1 Operation in this area is limited by RDS(on) 0.1 50 100 Case Temperature 150 200 Tc (°C) 0.01 0.1 0.3 1 3 10 30 100 Drain to Source Voltage VDS (V) Typical Output Characteristics Pulse Test 4.5 V V DS = 10 V Pulse Test 3.5 V (A) 80 Typical Transfer Characteristics 100 10V ID 100 60 Drain Current ID (A) s DC µs 10 Tc = 25°C 1 shot Pulse 0 Drain Current 10 1m 100 Drain Current Channel Dissipation Pch (W) 160 3V 40 20 80 60 40 25°C Tc = 75°C -25°C 20 VGS = 2.5 V 0 2 4 6 Drain to Source Voltage Rev.3, Aug. 2002, page 4 of 11 8 VDS 10 (V) 0 1 2 3 Gate to Source Voltage 4 VGS 5 (V) H7N0308LD, H7N0308LS, H7N0308LM 300 200 I D = 50 A 100 10 A 0 Drain to Source On State Resistance RDS(on) (mΩ) 20 A 4 8 12 Gate to Source Voltage I D = 10 A, 20 A 10 I D = 50 A 8 V GS = 4.5 V 6 4 10 A, 20 A, 50 A 2 0 -25 Static Drain to Source on State Resistance vs. Drain Current 100 Pulse Test 30 10 V GS = 4.5 V 3 10 V 0 25 50 75 100 125 150 Case Temperature Tc (°C) 10 V 1 0.3 0.1 1 16 20 VGS (V) Static Drain to Source on State Resistance vs. Temperature 12 Pulse Test Drain to Source On State Resistance RDS(on) (mΩ) Pulse Test 3 10 100 300 30 Drain Current ID (A) 1000 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) (mV) 400 Drain to Source Voltage 500 VDS(on) Drain to Source Saturation Voltage vs. Gate to Source Voltage 1000 300 Tc = -25°C 100 30 75°C 25°C 10 3 1 V DS = 10 V Pulse Test 1 3 10 Drain Current 30 100 ID (A) Rev.3, Aug 2002, page 5 of 11 H7N0308LD, H7N0308LS, H7N0308LM Typical Capacitance vs. Drain to Source Voltage Body-Drain Diode Reverse Recovery Time 10000 Capacitance C (pF) Reverse Recovery Time trr (ns) 100 50 20 Ciss 3000 1000 Coss Crss 300 10 0.1 di / dt = 50 A / µs V GS = 0, Ta = 25°C VGS = 0 f = 1 MHz 100 0 0.3 1 3 10 30 100 Reverse Drain Current IDR (A) 10 VDD = 5 V 10 V 20 V 30 (V) 16 12 V DS 8 20 10 0 V DD = 20 V 10 V 5V 20 40 60 80 Gate Charge Qg (nc) Rev.3, Aug. 2002, page 6 of 11 4 0 100 40 50 (V) V GS = 10 V , VDS = 10 V 500 Rg = 4.7 Ω, duty < 1 % Switching Time t (ns) 40 V GS 30 Switching Characteristics 1000 20 VGS I D = 70 A Gate to Source Voltage Drain to Source Voltage VDS (V) Dynamic Input Characteristics 50 20 Drain to Source Voltage VDS tr 200 t d(off) 100 50 t d(on) 20 10 0.1 tf 0.3 1 3 Drain Current 10 30 ID (A) 100 H7N0308LD, H7N0308LS, H7N0308LM Reverse Drain Current vs. Souece to Drain Voltage Reverse Drain Current IDR (A) 100 80 10 V 60 V GS = 0, -5V 5V 40 20 Pulse Test 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 VSD 2.0 (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t) 3 Tc = 25°C 1 D=1 0.5 0.3 0.1 0.03 0.2 θ ch - c(t) = γs (t) • θ ch - c θ ch - c = 1.25°C/ W, Tc = 25°C 0.1 0.05 0.02 e 1 0.0 puls t o h 1s PDM D= PW T PW T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) Rev.3, Aug 2002, page 7 of 11 H7N0308LD, H7N0308LS, H7N0308LM Package Dimensions • H7N0308LD Unit: mm 2.54 ± 0.5 (1.4) 2.54 ± 0.5 11.0 ± 0.5 10.0 0.2 0.86 +– 0.1 11.3 ± 0.5 1.37 ± 0.2 1.3 ± 0.2 4.44 ± 0.2 1.3 ± 0.15 + 0.3 – 0.5 8.6 ± 0.3 10.2 ± 0.3 2.49 ± 0.2 0.4 ± 0.1 Hitachi Code JEDEC JEITA Mass (reference value) Rev.3, Aug. 2002, page 8 of 11 LDPAK (L) — — 1.4 g H7N0308LD, H7N0308LS, H7N0308LM • H7N0308LS Unit: mm 2.54 ± 0.5 7.8 7.0 (1.5) 0.3 10.0 +– 0.5 0.2 0.1 +– 0.1 2.2 2.49 ± 0.2 0.2 0.86 +– 0.1 2.54 ± 0.5 1.7 7.8 6.6 1.3 ± 0.2 0.3 3.0 +– 0.5 1.3 ± 0.2 8.6 ± 0.3 (1.5) 1.37 ± 0.2 (1.4) 4.44 ± 0.2 10.2 ± 0.3 0.4 ± 0.1 Hitachi Code JEDEC JEITA Mass (reference value) LDPAK (S)-(1) — — 1.3 g Rev.3, Aug 2002, page 9 of 11 H7N0308LD, H7N0308LS, H7N0308LM • H7N0308LM Unit: mm 7.8 7.0 (2.3) 0.3 10.0 +– 0.5 0.2 0.1 +– 0.1 2.2 2.49 ± 0.2 0.2 0.86 +– 0.1 2.54 ± 0.5 0.3 5.0 +– 0.5 1.3 ± 0.2 2.54 ± 0.5 8.6 ± 0.3 (1.5) 1.37 ± 0.2 7.8 6.6 1.3 ± 0.2 0.4 ± 0.1 Hitachi Code JEDEC JEITA Mass (reference value) Rev.3, Aug. 2002, page 10 of 11 1.7 (1.4) 4.44 ± 0.2 10.2 ± 0.3 LDPAK (S)-(2) — — 1.35 g H7N0308LD, H7N0308LS, H7N0308LM Disclaimer 1. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-2735-9218 Fax : <852>-2730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan. Colophon 6.0 Rev.3, Aug 2002, page 11 of 11