2SK3461(L), 2SK3461(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-944 (Z) 1st. Edition Mar. 2001 Features • Low on-resistance R DS(on) = 4.3 m typ. • 4 V gate drive device • High speed switching Outline LDPAK 4 4 D 1 1 G S 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK3461(L), 2SK3461(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS ±20 V Drain current ID 85 A 340 A 85 A 60 A 308 mJ 110 W Note 1 Drain peak current ID Body-drain diode reverse drain current I DR Avalanche current I AP Avalanche energy (pulse) Note 3 EAR Note 3 Note 2 Channel dissipation Pch Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C: Rg ≥ 50 Ω 2 2SK3461(L), 2SK3461(S) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS 60 — — V I D = 10 mA, VGS = 0 Gate to source leak current I DSS — — 10 µA VDS = 60 V, VGS = 0 Zero gate voltage drain current I GSS — — ±0.1 µA VGS = ±20 V, VDS = 0 Gate to source cutoff voltage VGS(off) 1.0 — 2.5 V VDS = 10 V, ID = 1 mA Forward transfer admittance |yfs| 55 90 — S I D = 45 A, VDS = 10 V Note 1 Static drain to source on state RDS(on) — 4.3 5.5 mΩ I D = 45 A, VGS = 10 V Note 1 resistance RDS(on) — 6.0 9.0 mΩ I D = 45 A, VGS = 4 V Note 1 Input capacitance Ciss — 9770 — pF VDS = 10 V Output capacitance Coss — 1340 — pF VGS = 0 Reverse transfer capacitance Crss — 470 — pF f = 1 MHz Total gate charge Qg — 180 — nc VDD = 50 V Gate to source charge Qgs — 32 — nc VGS = 10 V Gate to drain charge Qgd — 36 — nc I D = 85 A Turn-on delay time td(on) — 53 — ns VGS = 10 V Rise time tr — 320 — ns I D = 45 A Turn-off delay time td(off) — 700 — ns RL = 0.67 Ω Fall time tf — 380 — ns Body-drain diode forward voltage VDF — 1.0 — V I F = 85 A, VGS = 0 Body-drain diode reverse recovery time trr — 70 — ns I F = 85 A, VGS = 0 diF/dt = 50 A/µs Note: Note 1 1. Pulse test 3 2SK3461(L), 2SK3461(S) Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 1000 ID (A) 120 80 40 100 30 10 Operation in 3 this area is µs 1 00 = 1 µs m DC 10 m Op s (1 s e (T rati sho c = on t) 25 °C ) limited by RDS(on) 1 50 100 Case Temperature 150 Tc (°C) 0.1 Ta = 25°C 0.1 0.3 1 200 30 10 100 VDS (V) Typical Transfer Characteristics 100 Pulse Test V DS = 10 V 5V ID (A) 80 VGS = 10 V 3 Drain to Source Voltage Typical Output Characteristics 100 4V 60 Drain Current ID (A) PW 0.3 0 Drain Current 10 300 Drain Current Channel Dissipation Pch (W) 160 40 3V 20 80 Pulse Test 60 40 25°C 20 75°C Tc = –25°C 2.5 V 0 4 2 4 6 Drain to Source Voltage 8 10 VDS (V) 0 1 2 3 Gate to Source Voltage 4 5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source Saturation Voltage vs. Gate to Source Voltage 0.5 100 Drain to Source on State Resistance RDS(on) (mΩ) Pulse Test Pulse Test 30 0.4 VGS = 4 V 10 0.3 I D = 50 A 0.2 20 A 0.1 12 4 8 Gate to Source Voltage 20 16 12 I D = 50 A 10, 20 A 4V 4 0 –50 1 VGS = 10 V 0 50 100 Case Temperature 1 3 VGS (V) Static Drain to Source on State Resistance vs. Temperature 20 Pulse Test 8 10 V 0.1 16 10, 20, 50 A 150 Tc (°C) 200 30 100 300 1000 10 Drain Current ID (A) Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) 0 3 0.3 10 A Static Drain to Source on State Resistance RDS(on) (mΩ) Drain to Source Saturation Voltage VDS(on) (V) 2SK3461(L), 2SK3461(S) 500 200 V DS = 10 V Pulse Test 100 50 Tc = –25°C 20 10 25°C 5 75°C 2 1 0.5 0.1 0.3 1 3 Drain Current 10 30 100 ID (A) 5 2SK3461(L), 2SK3461(S) Typical Capacitance vs. Drain to Source Voltage Body-Drain Diode Reverse Recovery Time 30000 di / dt = 50 A / µs V GS = 0, Ta = 25°C 500 VGS = 0 f = 1 MHz 10000 Capacitance C (pF) Reverse Recovery Time trr (ns) 1000 200 100 50 Ciss 3000 Coss 1000 300 20 10 0.1 0.3 1 3 10 Reverse Drain Current 30 100 0 100 IDR (A) 20 VDS = 50 V 25 V 10 V V DS VDS = 50 V 25 V 10 V 80 160 240 320 Gate Charge Qg (nc) 12 8 4 0 400 VGS (V) t d(off) 500 Switching Time t (ns) 60 40 16 V GS 40 50 VDS (V) 1000 Gate to Emitter Voltage VDS (V) Collector to Emitter Voltage 80 0 6 20 I D = 85 A 10 20 30 Drain to Source Voltage Switching Characteristics Dynamic Input Characteristics 100 Crss tf 200 100 50 20 tr t d(on) V GS = 10 V, V DD = 30 V PW = 5 µs, duty < 1 % 10 2 5 10 20 0.1 0.2 0.5 1 Drain Current ID (A) 50 100 2SK3461(L), 2SK3461(S) 10 V 80 5V 60 V GS = 0, –5 V 20 Pulse Test 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 400 I AP = 60 A V DD = 15 V duty < 0.1 % Rg > 50 Ω 320 Repetitive Avalanche Energy Reverse Drain Current IF (A) 100 40 Maximum Avalanche Energy vs. Channel Temperature Derating EAR (mJ) Reverse Drain Current vs. Source to Drain Voltage 240 160 80 0 25 VSDF (V) 50 75 100 Channel Temperature Avalanche Test Circuit V DS Monitor 125 150 Tch (°C) Avalanche Waveform EAR = L 1 2 • L • I AP • 2 I AP Monitor VDSS VDSS – V DD V (BR)DSS I AP Rg D. U. T V DS VDD ID Vin 15 V 50Ω 0 VDD 7 2SK3461(L), 2SK3461(S) Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 1.14°C/W, Tc = 25°C 0.1 0.05 PDM 0.02 1 lse 0.0 t pu o h 1s 0.03 0.01 10 µ D= PW T PW T 100 µ 1m 10 m 100 m Pulse Width PW (s) Switching Time Test Circuit 1 10 Waveform Vout Monitor Vin Monitor 90% D.U.T. RL Vin Vin 10 V 50Ω V DD = 30 V Vout 10% 10% 90% td(on) 8 tr 10% 90% td(off) tf 2SK3461(L), 2SK3461(S) Package Dimensions As of January, 2001 Unit: mm 2.54 ± 0.5 (1.4) 2.54 ± 0.5 11.3 ± 0.5 10.0 1.27 ± 0.2 0.2 0.86 +– 0.1 0.76 ± 0.1 11.0 ± 0.5 1.2 ± 0.2 4.44 ± 0.2 1.3 ± 0.15 + 0.3 – 0.5 8.6 ± 0.3 10.2 ± 0.3 2.59 ± 0.2 0.4 ± 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) LDPAK (L) — — 1.4 g 9 2SK3461(L), 2SK3461(S) As of January, 2001 Unit: mm 2.54 ± 0.5 0.2 0.86 +– 0.1 2.54 ± 0.5 0.3 3.0 +– 0.5 1.27 ± 0.2 1.2 ± 0.2 7.8 7.0 (1.5) 0.2 0.1 +– 0.1 2.2 0.4 ± 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) 10 1.7 7.8 6.6 1.3 ± 0.15 0.3 10.0 +– 0.5 8.6 ± 0.3 (1.5) (1.4) 4.44 ± 0.2 10.2 ± 0.3 LDPAK (S)-(1) — — 1.3 g 2SK3461(L), 2SK3461(S) As of January, 2001 Unit: mm (1.5) 7.8 7.0 1.7 7.8 6.6 1.3 ± 0.2 0.3 10.0 +– 0.5 8.6 ± 0.3 (1.5) (1.4) 4.44 ± 0.2 10.2 ± 0.3 0.2 0.1 +– 0.1 2.2 1.2 ± 0.2 2.54 ± 0.5 0.2 0.86 +– 0.1 2.54 ± 0.5 0.3 5.0 +– 0.5 1.27 ± 0.2 0.4 ± 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) LDPAK (S)-(2) — — 1.35 g 11 2SK3461(L), 2SK3461(S) Cautions 1. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 12