Composite Transistors XP06534 (XP6534) 0.2±0.05 For high-frequency amplification 5 0.12+0.05 –0.02 4 5˚ ■ Features 0.2±0.1 1.25±0.10 2.1±0.1 6 Unit: mm (0.425) Silicon NPN epitaxial planar type • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half 1 3 2 (0.65) (0.65) 1.3±0.1 2.0±0.1 ■ Basic Part Number 0.9±0.1 • 2SC2404 × 2 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 30 V Collector-emitter voltage (Base open) VCEO 20 V Emitter-base voltage (Collector open) VEBO 3 V Collector current IC 15 mA Total power dissipation PT 150 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0 to 0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.9+0.2 –0.1 10˚ 1: Emitter (Tr1) 2: Emitter (Tr2) 3: Base (Tr2) EIAJ: SC-88 4: Collector (Tr2) 5: Base (Tr1) 6: Collector (Tr1) SMini6-G1 Package Marking Symbol: 7F Internal Connection 6 5 Tr2 Tr1 1 4 2 3 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 Conditions Min 30 Typ Max Unit Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 3 Base-emitter voltage VBE VCB = 6 V, IE = −1 mA Forward current transfer ratio hFE VCB = 6 V, IE = −1 mA 40 Transition frequency fT VCB = 6 V, IE = −1 mA, f = 200 MHz 450 Reverse transfer capacitance (Common emitter) Cre VCB = 6 V, IE = −1 mA, f = 10.7 MHz Power gain GP VCB = 6 V, IE = −1 mA, f = 100 MHz 24 dB Noise figure NF VCB = 6 V, IE = −1 mA, f = 100 MHz 3.3 dB V V 720 mV 250 650 MHz 0.8 pF Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Note) The part number in the parenthesis shows conventional part number. Publication date: March 2004 SJJ00216BED 1 XP06534 PT Ta IC VCE Ta = 25°C 100 50 80 µA 8 60 µA 6 40 µA 4 20 µA 80 120 0 160 6 Collector current IC (mA) −25°C 20 15 10 5 0 0.4 0.8 1.2 1.6 Base-emitter voltage VBE Collector-emitter saturation voltage VCE(sat) (V) 25°C Ta = 75°C 2.0 25°C 1 10 600 400 200 −10 Emitter current IE (mA) −100 Reverse transfer impedance Zrb (Ω) 800 240 Ta = 75°C 180 25°C −25°C 120 60 10 100 Cre VCE 2.4 60 40 20 −1 Emitter current IE (mA) SJJ00216BED 1 Collector current IC (mA) 80 0 − 0.1 160 300 0 0.1 100 VCB = 6 V f = 2 MHz Ta = 25°C 100 120 VCE = 6 V Zrb IE 120 1 000 Transition frequency fT (MHz) Ta = 75°C −25°C 0.01 0.1 80 hFE IC 1 0.1 40 360 Collector current IC (mA) VCB = 6 V Ta = 25°C 2 0 Base current IB (µA) IC / IB = 10 10 fT I E −1 18 100 (V) 1 200 0 − 0.1 12 VCE(sat) IC VCE = 6 V 25 4 Collector-emitter voltage VCE (V) IC VBE 30 6 0 0 Forward current transfer ratio hFE 40 Reverse transfer capacitance Cre (pF) (Common emitter) 0 8 2 2 Ambient temperature Ta (°C) 0 VCE = 6 V Ta = 25°C 10 Collector current IC (mA) Collector current IC (mA) Total power dissipation PT (mW) 150 12 IB = 100 µA 10 200 0 IC I B 12 250 −10 IC = 1 mA f = 10.7 MHz Ta = 25°C 2.0 1.6 1.2 0.8 0.4 0 0.1 1 10 100 Collector-emitter voltage VCE (V) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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