ON Semiconductor BUL146 BUL146F SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The BUL146/BUL146F have an applications specific state–of–the–art die designed for use in fluorescent electric lamp ballasts to 130 Watts and in Switchmode Power supplies for all types of electronic equipment. These high voltage/high speed transistors offer the following: POWER TRANSISTOR 6.0 AMPERES 700 VOLTS 40 and 100 WATTS • Improved Efficiency Due to Low Base Drive Requirements: • • • • High and Flat DC Current Gain Fast Switching No Coil Required in Base Circuit for Turn–Off (No Current Tail) Full Characterization at 125°C Two Packages Choices: Standard TO220 or Isolated TO220 Parametric Distributions are Tight and Consistent Lot–to–Lot BUL146F, Case 221D, is UL Recognized to 3500 VRMS: File # E69369 MAXIMUM RATINGS Rating Symbol BUL146 BUL146F Unit Collector–Emitter Sustaining Voltage VCEO 400 Vdc Collector–Emitter Breakdown Voltage VCES 700 Vdc Emitter–Base Voltage VEBO 9.0 Vdc IC Adc Adc Collector Current – Continuous – Peak(1) ICM 6.0 15 Base Current – Continuous – Peak(1) IB IBM 4.0 8.0 RMS Isolation Voltage: (2) (for 1 sec, R.H. 30%, TC = 25 C) VISOL1 VISOL2 VISOL3 – – – 4500 3500 1500 Volts PD 100 0.8 40 0.32 Watts W/°C Total Device Dissipation Derate above 25°C (TC = 25°C) Operating and Storage Temperature TJ, Tstg – 65 to 150 °C BUL146 CASE 221A–09 TO–220AB CASE 221D–02 ISOLATED TO–220 TYPE BUL146F THERMAL CHARACTERISTICS Rating Thermal Resistance – Junction to Case – Junction to Ambient Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds Semiconductor Components Industries, LLC, 2001 June, 2001 – Rev. 5 Symbol BUL146 BUL146F Unit RθJC RθJA 1.25 62.5 3.125 62.5 °C/W TL 260 1 °C Publication Order Number: BUL146/D BUL146 BUL146F ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS VCEO(sus) 400 – – Vdc Collector Cutoff Current (VCE = Rated VCEO, IB = 0) Collector–Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) ICEO – – 100 µAdc Collector Cutoff Current (VCE = Rated VCES, VEB = 0) (TC = 125°C) Collector Cutoff Current (VCE = 500 V, VEB = 0) (TC = 125°C) ICES – – – – – – 100 500 100 µAdc Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0) IEBO – – 100 µAdc (1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%. ELECTRICAL CHARACTERISTICS – (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Base–Emitter Saturation Voltage (IC = 1.3 Adc, IB = 0.13 Adc) Base–Emitter Saturation Voltage (IC = 3.0 Adc, IB = 0.6 Adc) VBE(sat) – – 0.82 0.93 1.1 1.25 Vdc Collector–Emitter Saturation Voltage (IC = 1.3 Adc, IB = 0.13 Adc) (TC = 125°C) Collector–Emitter Saturation Voltage (IC = 3.0 Adc, IB = 0.6 Adc) (TC = 125°C) VCE(sat) – – – – 0.22 0.20 0.30 0.30 0.5 0.5 0.7 0.7 Vdc hFE 14 – 12 12 8.0 7.0 10 – 30 20 20 13 12 20 34 – – – – – – – Characteristic ON CHARACTERISTICS DC Current Gain (IC = 0.5 Adc, VCE = 5.0 Vdc) (TC = 125°C) DC Current Gain (IC = 1.3 Adc, VCE = 1.0 Vdc) (TC = 125°C) DC Current Gain (IC = 3.0 Adc, VCE = 1.0 Vdc) (TC = 125°C) DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz) fT – 14 – MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) COB – 95 150 pF Input Capacitance (VEB = 8.0 V) CIB – 1000 1500 pF 2.5 6.5 – – Dynamic y a c Saturation Sa u a o Volto age: Determined 1.0 µs and 3 0 µs respectively after 3.0 rising IB1 reaches 90% of final IB1 (see Figure 18) (IC = 1.3 Adc IB1 = 300 mAdc VCC = 300 V) (IC = 3.0 Adc IB1 = 0.6 0 6 Adc VCC = 300 V) 1.0 µs (TC = 125°C) – – 3.0 µs (TC = 125°C) – – 0.6 2.5 – – 3.0 7.0 – – 0.75 1.4 – – VCE(dsat) 1.0 µs (TC = 125°C) – – 3.0 µs (TC = 125°C) – – http://onsemi.com 2 V BUL146 BUL146F SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 µs) Turn–On Time (IC = 1.3 Adc, IB1 = 0.13 Adc IB2 = 0.65 Adc, VCC = 300 V) ton – – 100 90 200 – ns toff – – 1.35 1.90 2.5 – µs ton – – 90 100 150 – ns toff – – 1.7 2.1 2.5 – µs tfi – – 115 120 200 – ns tsi – – 1.35 1.75 2.5 – µs tc – – 200 210 350 – ns tfi – – 85 100 150 – ns tsi – – 1.75 2.25 2.5 – µs tc – – 175 200 300 – ns tfi 80 – – 210 180 – ns tsi 2.6 – – 4.5 3.8 – µs tc – – 230 400 350 – ns (TC = 125°C) Turn–Off Time (TC = 125°C) Turn–On Time (IC = 3.0 Adc, IB1 = 0.6 Adc IB1 = 1.5 Adc, VCC = 300 V) (TC = 125°C) Turn–Off Time (TC = 125°C) SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 µH) Fall Time (IC = 1.3 Adc, IB1 = 0.13 Adc IB2 = 0.65 Adc) (TC = 125°C) Storage Time (TC = 125°C) Crossover Time (TC = 125°C) Fall Time (IC = 3.0 Adc, IB1 = 0.6 Adc IB2 = 1.5 Adc) (TC = 125°C) Storage Time (TC = 125°C) Crossover Time (TC = 125°C) Fall Time (IC = 3.0 Adc, IB1 = 0.6 Adc IB2 = 0.6 Adc) (TC = 125°C) Storage Time (TC = 125°C) Crossover Time (TC = 125°C) http://onsemi.com 3 BUL146 BUL146F TYPICAL STATIC CHARACTERISTICS 100 100 TJ = 25°C TJ = -20°C 10 1 0.01 1 0.1 VCE = 5 V TJ = 125°C VCE = 1 V h FE , DC CURRENT GAIN h FE , DC CURRENT GAIN TJ = 125°C TJ = 25°C TJ = -20°C 10 1 0.01 10 0.1 1 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 1. DC Current Gain @ 1 Volt Figure 2. DC Current Gain @ 5 Volts 2 10 IC = 1 A 1 2A 3A 5A V CE , VOLTAGE (V) V CE , VOLTAGE (V) TJ = 25°C 6A 1 IC/IB = 10 0.1 TJ = 25°C TJ = 125°C IC/IB = 5 0 0.01 0.1 1 0.01 0.01 10 10 Figure 3. Collector Saturation Region Figure 4. Collector–Emitter Saturation Voltage 10000 1.1 TJ = 25°C f = 1 MHz Cib 1000 C, CAPACITANCE (pF) 1 V BE , VOLTAGE (V) 1 IC COLLECTOR CURRENT (AMPS) 1.2 0.9 0.8 TJ = 25°C 0.7 0.6 0.5 0.1 IB, BASE CURRENT (mA) TJ = 125°C 0.4 0.01 IC/IB = 5 IC/IB = 10 0.1 1 100 Cob 10 1 10 1 10 100 IC, COLLECTOR CURRENT (AMPS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. Base–Emitter Saturation Region Figure 6. Capacitance http://onsemi.com 4 1000 BUL146 BUL146F TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching) 1000 600 2500 6 4 2 0 IC/IB = 10 2000 1500 500 4 6 TJ = 25°C TJ = 125°C 4000 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH TJ = 25°C TJ = 125°C 3500 3000 2500 2000 1500 1000 IC = 1.3 A 500 IC/IB = 10 3 4 6 2 5 IC COLLECTOR CURRENT (AMPS) 7 0 8 4 3 5 hFE, FORCED GAIN 250 200 tfi t, TIME (ns) t, TIME (ns) 200 100 0 1 2 7 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH tc IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH 6 Figure 10. Inductive Storage Time, tsi(hFE) 250 150 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH IC = 3 A Figure 9. Inductive Storage Time, tsi 50 8 Figure 8. Resistive Switching, toff 1000 1 2 Figure 7. Resistive Switching, ton 1500 0 0 IC, COLLECTOR CURRENT (AMPS) IC/IB = 5 500 0 8 IC, COLLECTOR CURRENT (AMPS) 2000 0 IB(off) = IC/2 VCC = 300 V PW = 20 µs 1000 TJ = 25°C 2500 t, TIME (ns) t, TIME (ns) TJ = 125°C 200 0 IC/IB = 5 3000 400 0 TJ = 25°C TJ = 125°C 3500 t si , STORAGE TIME (ns) t, TIME (ns) 800 4000 IB(off) = IC/2 VCC = 300 V PW = 20 µs IC/IB = 5 IC/IB = 10 tc tfi 150 100 TJ = 25°C TJ = 125°C 3 4 5 6 7 50 8 TJ = 25°C TJ = 125°C 0 1 2 3 4 5 6 7 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 11. Inductive Switching, tc and tfi IC/IB = 5 Figure 12. Inductive Switching, tc and tfi IC/IB = 10 http://onsemi.com 5 8 BUL146 BUL146F TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching) 250 130 TC , CROSS-OVER TIME (ns) Tfi , FALL TIME (ns) IC = 3 A 110 100 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH 90 80 70 60 IC = 1.3 A IC = 1.3 A 120 TJ = 25°C TJ = 125°C 3 4 6 5 7 200 150 50 8 9 10 11 12 13 14 IC = 3 A 100 15 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH TJ = 25°C TJ = 125°C 3 4 5 6 7 8 9 10 11 12 13 hFE, FORCED GAIN hFE, FORCED GAIN Figure 13. Inductive Fall Time Figure 14. Inductive Cross–Over Time 14 15 GUARANTEED SAFE OPERATING AREA INFORMATION 10 7 DC (BUL146) 5 ms 10 µs 1 ms 1 µs EXTENDED SOA 1 0.1 0.01 10 I C , COLLECTOR CURRENT (AMPS) I C , COLLECTOR CURRENT (AMPS) 100 1000 1,0 POWER DERATING FACTOR 4 3 SECOND BREAKDOWN DERATING 0,8 0,6 0,4 THERMAL DERATING 0,2 40 60 80 100 120 140 TC, CASE TEMPERATURE (°C) Figure 17. Forward Bias Power Derating VBE(off) 2 -5 V 1 0V 0 -1, 5 V 600 400 200 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 800 Figure 16. Reverse Bias Switching Safe Operating Area Figure 15. Forward Bias Safe Operating Area 0,0 20 5 0 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) TC ≤ 125°C IC/IB ≥ 4 LC = 500 µH 6 160 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 15 is based on TC = 25°C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown in Figure 15 may be found at any case temperature by using the appropriate curve on Figure 17. TJ(pk) may be calculated from the data in Figure 20. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn–off with the base–to–emitter junction reverse–biased. The safe level is specified as a reverse– biased safe operating area (Figure 16). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. http://onsemi.com 6 BUL146 BUL146F 5 4 10 VCE dyn 1 µs 3 8 VOLTS 2 tsi 7 dyn 3 µs 1 6 5 0 -1 -4 90% IB1 1 3 µs 0 1 2 3 4 TIME 5 6 7 8 0 Figure 18. Dynamic Saturation Voltage Measurements 1 2 3 4 TIME 5 150 Ω 3W 8 VCE PEAK MTP8P10 MPF930 MUR105 MPF930 +10 V 7 IC PEAK 100 µF MTP8P10 100 Ω 3W 6 Figure 19. Inductive Switching Measurements +15 V 1 µF 10% IC 2 IB -5 0 tc 10% VCLAMP IB 3 1 µs -3 VCLAMP 4 90% IB -2 90% IC tfi IC 9 VCE RB1 IB1 Iout IB A 50 Ω MJE210 COMMON 150 Ω 3W 500 µF IB2 RB2 MTP12N10 1 µF V(BR)CEO(sus) L = 10 mH RB2 = ∞ VCC = 20 VOLTS IC(pk) = 100 mA -Voff INDUCTIVE SWITCHING L = 200 µH RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1 RBSOA L = 500 µH RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1 Table 1. Inductive Load Switching Drive Circuit TYPICAL THERMAL RESPONSE r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 D = 0.5 0.2 0.1 0.1 P(pk) 0.05 0.02 t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.01 0.1 1 RθJC(t) = r(t) RθJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RθJC(t) 10 t, TIME (ms) Figure 20. Typical Thermal Response (ZθJC(t)) for BUL146 http://onsemi.com 7 100 1000 BUL146 BUL146F r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) TYPICAL THERMAL RESPONSE 1.00 D = 0.5 0.2 0.10 P(pk) 0.1 0.05 t1 0.02 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.01 0.10 1.00 10.00 t, TIME (ms) Figure 21. Typical Thermal Response for BUL146F http://onsemi.com 8 RθJC(t) = r(t) RθJC RθJC = 3.125°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RθJC(t) 100.00 1000 BUL146 BUL146F TEST CONDITIONS FOR ISOLATION TESTS* CLIP MOUNTED FULLY ISOLATED PACKAGE MOUNTED FULLY ISOLATED PACKAGE CLIP LEADS HEATSINK MOUNTED FULLY ISOLATED PACKAGE 0.107″ MIN LEADS LEADS HEATSINK HEATSINK 0.107″ MIN 0.110″ MIN Figure 22a. Screw or Clip Mounting Position for Isolation Test Number 1 Figure 22b. Clip Mounting Position for Isolation Test Number 2 Figure 22c. Screw Mounting Position for Isolation Test Number 3 *Measurement made between leads and heatsink with all leads shorted together MOUNTING INFORMATION** 4-40 SCREW CLIP PLAIN WASHER HEATSINK COMPRESSION WASHER HEATSINK NUT Figure 23a. Screw–Mounted Figure 23b. Clip–Mounted Figure 23. Typical Mounting Techniques for Isolated Package Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4–40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, ON Semiconductor does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions. ** For more information about mounting power semiconductors see Application Note AN1040. http://onsemi.com 9 BUL146 BUL146F PACKAGE DIMENSIONS TO–220AB CASE 221A–09 ISSUE AA –T– B SEATING PLANE C F T S 4 A Q 1 2 3 U H K Z L R V J G D N STYLE 2: PIN 1. BASE 2. EMITTER 3. COLLECTOR http://onsemi.com 10 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 BUL146 BUL146F PACKAGE DIMENSIONS CASE 221D–02 (ISOLATED TO–220 TYPE) UL RECOGNIZED: FILE #E69369 ISSUE D –T– –B– F SEATING PLANE C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. S Q U DIM A B C D F G H J K L N Q R S U A 1 2 3 H –Y– K G N L D J R 3 PL 0.25 (0.010) M B M Y INCHES MIN MAX 0.621 0.629 0.394 0.402 0.181 0.189 0.026 0.034 0.121 0.129 0.100 BSC 0.123 0.129 0.018 0.025 0.500 0.562 0.045 0.060 0.200 BSC 0.126 0.134 0.107 0.111 0.096 0.104 0.259 0.267 STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER http://onsemi.com 11 MILLIMETERS MIN MAX 15.78 15.97 10.01 10.21 4.60 4.80 0.67 0.86 3.08 3.27 2.54 BSC 3.13 3.27 0.46 0.64 12.70 14.27 1.14 1.52 5.08 BSC 3.21 3.40 2.72 2.81 2.44 2.64 6.58 6.78 BUL146 BUL146F SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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