Transistor 2SC5473 (Tentative) Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit: mm 2.1±0.1 ■ Features +0.1 0 0.3 0.2±0.1 Symbol Ratings Unit Collector to base voltage VCBO 9 V Collector to emitter voltage VCEO 6 V Emitter to base voltage VEBO 1 V Collector current IC 30 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C Parameter +0.10 (Ta=25˚C) Parameter ■ Electrical Characteristics 0.15–0.05 ■ Absolute Maximum Ratings 0 to 0.1 ● 0.2 ● High transition frequency fT. High gain of 8.9dB and low noise of 1.8dB at 3V. Optimum for RF amplification of a portable telephone and pager. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.425 2.0±0.1 1.3±0.1 0.65 0.65 ● 1.25±0.10 0.7±0.1 0.5±0.1 ● 0.425 1:Emitter 2:Collector 3:Emitter 4:Base EIAJ:SC–82 S-Mini Type Package Marking symbol : 3A (Ta=25˚C) Symbol Conditions min typ max Unit 1 µA 1 µA Collector cutoff current ICBO VCB = 9V, IE = 0 Emitter cutoff current IEBO VEB = 1V, IC = 0 Forward current transfer ratio hFE VCE = 3V, IC = 10mA Collector output capacitance Cob VCB = 3V, IE = 0, f = 1MHz 0.4 pF Transition frequency fT VCE = 3V, IC = 10mA, f = 2GHz 12.0 GHz Noise figure NF VCE = 3V, IC = 3mA, f = 1.5GHz 1.8 dB Foward transfer gain | S21e |2 VCE = 3V, IC = 10mA, f = 2GHz 8.9 dB 80 200 1 Transistor 2SC5473 hFE — IC 14 200 160 Ta=75˚C 120 –25˚C 25˚C 80 40 1 3 10 30 100 Collector current IC (mA) 5 VCE=3V f=1.5GHz Noise figure NF (dB) 4 3 2 1 0.3 1 3 Collector current IC (mA) 2 10 8 6 4 2 10 VCE=3V f=2GHz 8 6 4 2 0 1 3 10 30 Collector current IC (mA) NF — IC 0 0.1 12 0 0.3 10 VCE=3V Forward transfer gain |S21e|2 (dB) Transition frequency fT (GHz) Forward current transfer ratio hFE 240 0 0.1 | S21e |2 — IC fT — IC 100 1 3 10 30 Collector current IC (mA) 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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