ETC DTA114E/D

DTA114E SERIES
Preferred Devices
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the TO–92
package which is designed for through hole applications.
http://onsemi.com
PNP SILICON
BIAS RESISTOR
TRANSISTOR
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
Collector Current
IC
100
mAdc
Total Power Dissipation
@ TA = 25°C (1.)
Derate above 25°C
PD
350
2.81
mW
mW/°C
Rating
1
2
3
CASE 29
TO–92 (TO–226)
STYLE 1
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to
Ambient (surface mounted)
Operating and Storage
Temperature Range
Maximum Temperature for
Soldering Purposes,
Time in Solder Bath
Symbol
Value
Unit
RθJA
357
°C/W
TJ, Tstg
–55 to
+150
°C
260
10
°C
Sec
TL
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
Shipping
DTA114E
DTA124E
DTA144E
DTA114Y
DTA114T
DTA143T
DTB113E
DTA123E
DTA143E
DTA143Z
DTA114E
DTA124E
DTA144E
DTA114Y
DTA114T
DTA143T
DTB113E
DTA123E
DTA143E
DTA143Z
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
10
22
47
47
∞
∞
1.0
2.2
4.7
47
5000/Box
PIN3
COLLECTOR
(OUTPUT)
R1
PIN1 R2
BASE
(INPUT)
PIN2
EMITTER
(GROUND)
Preferred devices are recommended choices for future use
and best overall value.
1. Device mounted on a FR–4 glass epoxy printed circuit board using the
minimum recommended footprint.
 Semiconductor Components Industries, LLC, 2000
August, 2000 – Rev. 1
1
Publication Order Number:
DTA114E/D
DTA114E SERIES
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector–Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
—
—
100
nAdc
Collector–Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
—
—
500
nAdc
Emitter–Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
mAdc
Collector–Base Breakdown Voltage (IC = 10 µA, IE = 0)
V(BR)CBO
50
—
—
Vdc
Collector–Emitter Breakdown Voltage (2.) (IC = 2.0 mA, IB = 0)
V(BR)CEO
50
—
—
Vdc
hFE
35
60
80
80
160
160
3.0
8.0
15
80
60
100
140
140
250
250
5.0
15
27
140
—
—
—
—
—
—
—
—
—
—
VCE(sat)
—
—
0.25
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
OFF CHARACTERISTICS
DTA114E
DTA124E
DTA144E
DTA114Y
DTA114T
DTA143T
DTB113E
DTA123E
DTA143E
DTA143Z
ON CHARACTERISTICS (2.)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
DTA114E
DTA124E
DTA144E
DTA114Y
DTA114T
DTA143T
DTB113E
DTA123E
DTA143E
DTA143Z
Collector–Emitter Saturation Voltage
(IC = 10 mA, IE = 0.3 mA) DTA144E/DTA114Y
(IC = 10 mA, IE = 0.3 mA) DTB113E/DTA143E
(IC = 10 mA, IB = 5 mA) DTA123E
(IC = 10 mA, IB = 1 mA) DTA114T/DTA143T/
(IC = 10 mA, IB = 1 mA) DTA143Z/DTA124E
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ)
VOL
DTA114E
DTA124E
DTA114Y
DTA114T
DTA143T
DTB113E
DTA123E
DTA143E
DTA143Z
DTA144E
2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
http://onsemi.com
2
Vdc
Vdc
DTA114E SERIES
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 0.05 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ)
Input Resistor
Resistor Ratio
Symbol
Min
Typ
Max
Unit
VOH
4.9
—
—
Vdc
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
kΩ
R1/R2
0.8
0.17
—
0.8
0.055
1.0
0.21
—
1.0
0.1
1.2
0.25
—
1.2
0.185
DTA114T
DTA113T
DTA144E
DTA114Y
DTA143Z
DTB113E
DTA114T
DTA143T
DTA123E
DTA143E
DTA114E
DTA124E
DTA144E
DTA114Y
DTA114T
DTA143T
DTB113E
DTA123E
DTA143E
DTA143Z
DTA114E/DTA124E/DTA144E
DTA114Y
DTA114T/DTA143T
DTB113E/DTA123E/DTA143E
DTA143Z
http://onsemi.com
3
DTA114E SERIES
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
DTA114E
PD , POWER DISSIPATION (MILLIWATTS)
250
200
150
100
RθJA = 625°C/W
50
0
-50
0
50
100
150
1
IC/IB=10
TA=-25°C
75°C
0.1
0.01
20
0
TA, AMBIENT TEMPERATURE (°C)
Cob , CAPACITANCE (pF)
h FE, DC CURRENT GAIN (NORMALIZED)
TA=75°C
25°C
-25°C
100
10
IC, COLLECTOR CURRENT (mA)
3
2
1
0
100
f = 1 MHz
lE = 0 V
TA = 25°C
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 3. DC Current Gain
100
25°C
VO = 0.2 V
TA=-25°C
10
1
0.1
0.01
0.001
50
Figure 4. Output Capacitance
Vin, INPUT VOLTAGE (VOLTS)
IC , COLLECTOR CURRENT (mA)
75°C
80
4
VCE = 10 V
100
60
Figure 2. VCE(sat) versus IC
1000
1
40
IC, COLLECTOR CURRENT (mA)
Figure 1. Derating Curve
10
25°C
TA=-25°C
10
25°C
75°C
1
VO = 5 V
0
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
8
9
0.1
10
Figure 5. Output Current versus Input Voltage
0
10
20
30
IC, COLLECTOR CURRENT (mA)
40
Figure 6. Input Voltage versus Output Current
http://onsemi.com
4
50
DTA114E SERIES
1000
10
IC/IB=10
h FE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
DTA124E
TA=-25°C
25°C
1
75°C
0.1
0.01
0
20
60
40
IC, COLLECTOR CURRENT (mA)
VCE = 10 V
TA=75°C
100
10
80
1
10
Figure 8. DC Current Gain
100
IC , COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
2
1
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
25°C
TA=-25°C
1
0.1
VO = 5 V
0.01
0.001
50
75°C
10
0
1
2
3
4
VO = 0.2 V
TA=-25°C
25°C
10
75°C
1
0
10
6
7
8
9
Figure 10. Output Current versus Input Voltage
100
0.1
5
Vin, INPUT VOLTAGE (VOLTS)
Figure 9. Output Capacitance
Vin, INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
4
0
100
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) versus IC
3
25°C
-25°C
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
http://onsemi.com
5
10
DTA114E SERIES
1
1000
IC/IB=10
TA=-25°C
25°C
75°C
0.1
0.01
h FE , CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
DTA144E
0
10
20
30
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
10
40
-25°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 12. VCE(sat) versus IC
Figure 13. DC Current Gain
1
100
0.6
0.4
0.2
0
0
TA=75°C
-25°C
1
0.1
0.01
VO = 5 V
1
0
2
3
4
VO = 2 V
TA=-25°C
25°C
75°C
1
0
10
6
7
8
9
10
Figure 15. Output Current versus Input Voltage
100
0.1
5
Vin, INPUT VOLTAGE (VOLTS)
Figure 14. Output Capacitance
10
25°C
10
0.001
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
I C , COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
0.8
100
20
30
40
IC, COLLECTOR CURRENT (mA)
50
Figure 16. Input Voltage versus Output Current
http://onsemi.com
6
DTA114E SERIES
180
1
IC/IB=10
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
DTA114Y
TA=-25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
TA=75°C
VCE = 10 V
160
25°C
140
-25°C
120
100
80
60
40
20
0
80
2
1
4
6
Figure 17. VCE(sat) versus IC
TA=75°C
f = 1 MHz
lE = 0 V
TA = 25°C
3.5
3
IC, COLLECTOR CURRENT (mA)
Cob , CAPACITANCE (pF)
90 100
100
4
2.5
2
1.5
1
0.5
0
2
4
6 8 10 15 20 25 30 35
VR, REVERSE BIAS VOLTAGE (VOLTS)
40
45
25°C
-25°C
10
VO = 5 V
1
50
Figure 19. Output Capacitance
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
8
10
Figure 20. Output Current versus Input Voltage
+12 V
10
VO = 0.2 V
V in , INPUT VOLTAGE (VOLTS)
80
Figure 18. DC Current Gain
4.5
0
8 10 15 20 40 50 60 70
IC, COLLECTOR CURRENT (mA)
TA=-25°C
25°C
75°C
Typical Application
for PNP BRTs
1
LOAD
0.1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 21. Input Voltage versus Output Current
Figure 22. Inexpensive, Unregulated Current Source
http://onsemi.com
7
DTA114E SERIES
PACKAGE DIMENSIONS
A
TO–92
(TO–226)
CASE 29–11
ISSUE AL
B
R
P
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
L
SEATING
PLANE
K
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
D
X X
G
J
H
V
C
SECTION X–X
1
N
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
--0.250
--0.080
0.105
--0.100
0.115
--0.135
---
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
--6.35
--2.04
2.66
--2.54
2.93
--3.43
---
N
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 2:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 3:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 5:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 6:
PIN 1. GATE
2. SOURCE & SUBSTRATE
3. DRAIN
STYLE 7:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 8:
PIN 1. DRAIN
2. GATE
3. SOURCE & SUBSTRATE
STYLE 9:
PIN 1. BASE 1
2. EMITTER
3. BASE 2
STYLE 10:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 11:
PIN 1. ANODE
2. CATHODE & ANODE
3. CATHODE
STYLE 12:
PIN 1. MAIN TERMINAL 1
2. GATE
3. MAIN TERMINAL 2
STYLE 13:
PIN 1. ANODE 1
2. GATE
3. CATHODE 2
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
STYLE 15:
PIN 1. ANODE 1
2. CATHODE
3. ANODE 2
Thermal Clad is a trademark of the Bergquist Company
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
NORTH AMERICA Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
Email: [email protected]
Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada
N. American Technical Support: 800–282–9855 Toll Free USA/Canada
CENTRAL/SOUTH AMERICA:
Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST)
Email: ONlit–[email protected]
ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support
Phone: 303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time)
Toll Free from Hong Kong & Singapore:
001–800–4422–3781
Email: ONlit–[email protected]
JAPAN: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone: 81–3–5740–2745
Email: [email protected]
EUROPE: LDC for ON Semiconductor – European Support
German Phone: (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET)
Email: ONlit–[email protected]
French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET)
Email: ONlit–[email protected]
English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT)
Email: [email protected]
ON Semiconductor Website: http://onsemi.com
EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781
*Available from Germany, France, Italy, UK
For additional information, please contact your local
Sales Representative.
http://onsemi.com
8
DTA114E/D