Avalanche Characteristics Avalanche Current IAR EAS Single Pulse Avalanche Energy EAR Repetitive Avalanche Energy IAR Avalanche Current 3.1 - 44 Electrical Characteristics - OFF V(BR)DSS Drain-Source Breakdown Voltage Zero Gate Voltage IDSS Drain Current (VGS = 0) Gate-Body Leakage IGSS Current (VDS = 0) Electrical Characteristics - ON* Gate Threshold Voltage VGS(th) RDS(on) Static Drain-Source On Resistance On State Drain Current ID(on) Electrical Characteristics - Dynamic Forward Transductance gfs Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Electrical Characteristics - Switching On Turn-On Time Td(on) Rise Time tr (di/dt)on Turn-On Current Slope Min. Typ. Max. Units Test Conditions 60 A (repetitive or non-repetitive,TJ = 25°C) 720 mJ (starting TJ = 25°C, ID = IAR, VDD = 25 V) 100 mJ (pulse width limited by Tjmax, d< 1%) 37 A (repetitive or non-repetitive, TJ = 100°C) 100 2 Reverse Recovery Charge Reverse Recovery Current V ID = 250 µA, VGS = 0 250 1000 ±100 µA µA nA VDS = Max. Rat. VDS = Max. Rat. x 0.8, TC = 125°C VGS = ±20 V 4 0.025 0.05 V A VDS = VGS, ID = 250 µA VGS = 10 V, ID = 30 A TC = 100°C VDS > ID(on) x RDS(on)max, VGS = 10 V S pF pF pF VDS > ID(on) x RDS(on)max, ID= 30 A VDS = 25 V VGS = 0 f = 1 mHz 60 25 Total Gate Charge Qg Electrical Characteristics - Switching Off Off Voltage Rise Time Tr(Voff) Fall Time tf Cross-Over Time tcross Electrical Characteristics - Source Drain Diode Source Drain Current ISD Source Drain Current (pulsed) ISDM* Forward On Voltage VSD Reverse Recovery Time trr Qrr IRRM OM55N10NK (TC = 25°C unless otherwise specified) 4000 1100 250 90 270 270 nS VDD = 80 V, ID = 30 A nS RG = 50 , VGS = 10 V A/µS VDD = 80 V, ID = 30 A RG = 50 , VGS = 10 V nC VDD = 80 V, ID = 30 A, VGS = 10 V 120 200 210 410 nS nS nS 60 240 1.6 180 A A V nS 1.8 10 µC A *Pulse Test: Pulse width < 300µsec, Duty Cycle 1.5%. VDD = 80 V, ID = 30 A RG = 50 , VGS = 10 V ISD = 60 A, VGS = 0 ISD = 60 A, di/dt = 100 A/µs VR = 80 A (TC = 25°C unless otherwise specified) Avalanche Characteristics Avalanche Current IAR EAS Single Pulse Avalanche Energy EAR Repetitive Avalanche Energy IAR Avalanche Current Electrical Characteristics - OFF V(BR)DSS Drain-Source Breakdown Voltage Zero Gate Voltage IDSS Drain Current (VGS = 0) Gate-Body Leakage IGSS Current (VDS = 0) Electrical Characteristics - ON* Gate Threshold Voltage VGS(th) RDS(on) Static Drain-Source On Resistance On State Drain Current ID(on) Electrical Characteristics - Dynamic Forward Transductance gfs Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Electrical Characteristics - Switching On Turn-On Time Td(on) Rise Time tr (di/dt)on Turn-On Current Slope Min. Typ. Max. Units Test Conditions 55 A (repetitive or non-repetitive,TJ = 25°C) 600 mJ (starting TJ = 25°C, ID = IAR, VDD = 25 V) 100 mJ (pulse width limited by Tjmax, d< 1%) 37 A (repetitive or non-repetitive, TJ = 100°C) 100 2 Reverse Recovery Charge Reverse Recovery Current ID = 250 µA, VGS = 0 250 1000 ±100 µA µA nA VDS = Max. Rat., VDS = Max. Rat. x 0.8, TC = 125°C VGS = ±20 V 4 0.03 0.06 V A VDS = VGS, ID = 250 µA VGS = 10 V, ID = 30 A TC = 100°C VDS > ID(on) x RDS(on)max, VGS = 10 V S pF pF pF VDS > ID(on) x RDS(on)max, ID= 30 A VDS = 25 V VGS = 0 f = 1 mHz 55 25 Total Gate Charge Qg Electrical Characteristics - Switching Off Off Voltage Rise Time Tr(Voff) Fall Time tf Cross-Over Time tcross Electrical Characteristics - Source Drain Diode Source Drain Current ISD Source Drain Current (pulsed) ISDM* Forward On Voltage VSD Reverse Recovery Time trr Qrr IRRM V 4000 1100 250 90 270 270 nS VDD = 80 V, ID = 30 A nS RG = 50 , VGS = 10 V A/µS VDD = 80 V, ID = 30 A RG = 50 , VGS = 10 V nC VDD = 80 V, ID = 30 A, VGS = 10 V 120 200 210 410 nS nS nS 55 180 1.5 180 A A V nS 1.8 10 µC A *Pulse Test: Pulse width < 300µsec, Duty Cycle 1.5%. VDD = 80 V, ID = 30 A RG = 50 , VGS = 10 V ISD = 55 A, VGS = 0 ISD = 55 A, di/dt = 100 A/µs VR = 80 A OM55N10NK - OM75N06NK 3.1 OM60N10NK OM75N05NK Avalanche Characteristics Avalanche Current IAR EAS Single Pulse Avalanche Energy EAR Repetitive Avalanche Energy IAR Avalanche Current 3.1 - 45 Electrical Characteristics - OFF V(BR)DSS Drain-Source Breakdown Voltage Zero Gate Voltage IDSS Drain Current (VGS = 0) Gate-Body Leakage IGSS Current (VDS = 0) Electrical Characteristics - ON* Gate Threshold Voltage VGS(th) RDS(on) Static Drain-Source On Resistance On State Drain Current ID(on) Electrical Characteristics - Dynamic Forward Transconductance gfs Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Electrical Characteristics - Switching On Turn-On Time Td(on) Rise Time tr (di/dt)on Turn-On Current Slope Min. Typ. Max. Units Test Conditions 70 A (repetitive or non-repetitive,TJ = 25°C) 900 mJ (starting TJ = 25°C, ID = IAR, VDD = 25 V) 200 mJ (pulse width limited by Tj max, d< 1%) 40 A (repetitive or non-repetitive, TJ = 100°C) 50 2 ID = 250 µA, VGS = 0 250 1000 ±100 µA µA nA VDS = Max. Rat. VDS = Max. Rat. x 0.8, TC = 125°C VGS = ±20 V 4 0.016 0.032 V A VDS = VGS, ID = 250 µA VGS = 10 V, ID = 40 A TC = 100°C VDS > ID(on) x RDS(on)max, VGS = 10 V S pF pF pF VDS > ID(on) x RDS(on)max, ID= 40 A VDS = 25 V VGS = 0 f = 1 mHz 25 4100 1800 420 190 900 150 nS VDD = 20 V, ID = 40 A nS RG = 50 , VGS = 10 V A/µS VDD = 20 V, ID = 40 A RG = 50 , VGS = 10 V nC VDD = 20 V, ID = 40 A, VGS = 10 V 130 360 280 600 nS nS nS 75 300 1.5 120 A A V nS 0.45 6.5 µC A VDD = 35 V, ID = 75 A RG = 50 , VGS = 10 V ISD = 75 A, VGS = 0 ISD = 75 A, di/dt = 100 A/µs VR = 20 V (TC = 25°C unless otherwise specified) Avalanche Characteristics Avalanche Current IAR EAS Single Pulse Avalanche Energy EAR Repetitive Avalanche Energy IAR Avalanche Current Electrical Characteristics - OFF V(BR)DSS Drain-Source Breakdown Voltage Zero Gate Voltage IDSS Drain Current (VGS = 0) Gate-Body Leakage IGSS Current (VDS = 0) Electrical Characteristics - ON* Gate Threshold Voltage VGS(th) RDS(on) Static Drain-Source On Resistance On State Drain Current ID(on) Electrical Characteristics - Dynamic Forward Transconductance gfs Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Electrical Characteristics - Switching On Turn-On Time Td(on) Rise Time tr (di/dt)on Turn-On Current Slope Min. Typ. Max. Units Test Conditions 70 A (repetitive or non-repetitive,TJ = 25°C) 900 mJ (starting TJ = 25°C, ID = IAR, VDD = 25 V) 200 mJ (pulse width limited by Tj max, d< 1%) 40 A (repetitive or non-repetitive, TJ = 100°C) 60 2 Reverse Recovery Charge Reverse Recovery Current 250 1000 ±100 µA µA nA VDS = Max. Rat. VDS = Max. Rat. x 0.8, TC = 125°C VGS = ±20 V 4 0.016 0.032 V A VDS = VGS, ID = 250 µA VGS = 10 V, ID = 40 A TC = 100°C VDS > ID(on) x RDS(on)max, VGS = 10 V S pF pF pF VDS > ID(on) x RDS(on)max, ID= 40 A VDS = 25 V VGS = 0 f = 1 mHz 25 4100 1800 420 190 900 150 nS VDD = 25 V, ID = 40 A nS RG = 50 , VGS = 10 V A/µS VDD = 25 V, ID = 40 A RG = 50 , VGS = 10 V nC VDD = 25 V, ID = 40 A, VGS = 10 V 130 360 280 600 nS nS nS 75 300 1.5 120 A A V nS 0.45 6.5 µC A *Pulse Test: Pulse width < 300µsec, Duty Cycle 1.5%. *Pulse Test: Pulse width < 300µsec, Duty Cycle 1.5%. ID = 250 µA, VGS = 0 75 Total Gate Charge Qg Electrical Characteristics - Switching Off Off Voltage Rise Time Tr(Voff) Fall Time tf Cross-Over Time tcross Electrical Characteristics - Source Drain Diode Source Drain Current ISD Source Drain Current (pulsed) ISDM* Forward On Voltage VSD Reverse Recovery Time trr Qrr IRRM V VDD = 40 V, ID = 75 A RG = 50 , VGS = 10 V ISD = 75 A, VGS = 0 ISD = 75 A, di/dt = 100 A/µs VR = 25 V 3.1 OM55N10NK - OM75N06NK Reverse Recovery Charge Reverse Recovery Current V 75 Total Gate Charge Qg Electrical Characteristics - Switching Off Off Voltage Rise Time Tr(Voff) Fall Time tf Cross-Over Time tcross Electrical Characteristics - Source Drain Diode Source Drain Current ISD Source Drain Current (pulsed) ISDM* Forward On Voltage VSD Reverse Recovery Time trr Qrr IRRM OM75N06NK (TC = 25°C unless otherwise specified) OM55N10NK - OM75N06NK ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter 60N10NK 75N05NK Units 100 100 60 50 V Drain-Gate Voltage (RGS = 1 M ) 100 100 60 50 V ID @ TC = 25°C Continuous Drain Current 60 55 75 75 A ID @ TC = 100°C Continuous Drain Current 37 33 45 45 A IDM Pulsed Drain Current1 180 180 225 225 A PD @ TC = 25°C Maximum Power Dissipation 130 130 130 130 W PD @ TC = 100°C Maximum Power Dissipation 55 55 55 55 W 1.00 1.00 1.00 1.00 W/°C VDS Drain-Source Voltage VDGR 2 2 Junction To Case Linear Derating Factor TJ Operating and Tstg Storage Temperature Range -55 to 150 Lead Temperature (1/16" from case for 10 secs.) 300 55N10NK 75N06NK -55 to 150 -55 to 150 -55 to 150 300 300 300 1 Pulse Test: Pulse width 300 µsec. Duty Cycle 2%. 2 Package Limited. THERMAL RESISTANCE (Maximum) at TA = 25°C RthJC Junction-to-Case 1.0 °C/W RthJA Junction-to-Ambient 30 °C/W Free Air Operation PACKAGE LIMITATIONS Parameter ID Unit Continous Drain Current Linear Derating Factor, Junction-to-Ambient 3.1 35 A .033 W/°C MECHANICAL OUTLINE 1.197 1.177 1.53 REF. 0.875 MAX. 0.135 MAX. SEATING PLANE 0.675 0.655 0.188 R. MAX. 0.450 0.250 0.312 MIN. 1 2 0.225 0.205 0.161 0.151 0.063 2 PLCS. 0.058 Pin Connection Pin 1: Gate Pin 2: Source Case: Drain 3.1 - 46 0.440 0.420 0.525 R. MAX. °C °C