PANASONIC 2SB967

Power Transistors
2SB967
Silicon PNP epitaxial planar type
Unit: mm
6.5±0.1
5.3±0.1
4.35±0.1
For low-frequency power amplification
2.3±0.1
1
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–27
V
Collector to emitter voltage
VCEO
–18
V
Emitter to base voltage
VEBO
–7
V
Peak collector current
ICP
–8
A
Collector current
IC
–5
A
Collector power dissipation (TC=25°C)
PC
20
W
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 to +150
˚C
3
Unit: mm
6.5±0.2
5.35
4.35
0.75
2.3
2.3
0.6
0.5±0.1
1
Parameter
2
1:Base
2:Collector
3:Emitter
U Type Package
(Ta=25˚C)
Parameter
■ Electrical Characteristics
0.8max
2.3±0.1
4.6±0.1
1.8
■ Absolute Maximum Ratings
0.5±0.1
0.75±0.1
5.5±0.2
13.3±0.3
●
1.0±0.1
0.1±0.05
0.93±0.1
6.0
●
Possible to solder the radiation fin directly to printed cicuit board
Low collector to emitter saturation voltage VCE(sat)
Large collector current IC
2
3
2.3±0.1
●
2.5±0.1
■ Features
1.0±0.2
1.8±0.1
7.3±0.1
0.5±0.1
1:Base
2:Collector
3:Emitter
EIAJ:SC–63
U Type Package (Z)
(TC=25˚C)
Symbol
Conditions
min
typ
max
Unit
Collector cutoff current
ICBO
VCB = –10V, IE = 0
–100
nA
Emitter cutoff current
IEBO
VEB = –5V, IC = 0
–1
µA
Collector to emitter voltage
VCEO
IC = –1mA, IB = 0
–18
V
Emitter to base voltage
VEBO
IE = –10µA, IC = 0
–7
V
Forward current transfer ratio
hFE
*
VCE = –2V, IC = –2A
90
Collector to emitter saturation voltage
VCE(sat)
IC = –3A, IB = – 0.1A
Transition frequency
fT
VCB = –6V, IE = 50mA, f = 200MHz
Collector output capacitance
Cob
VCB = –20V, IE = 0, f = 1MHz
*h
FE
625
–1
120
V
MHz
85
pF
Rank classification
Rank
P
Q
R
hFE
90 to 135
125 to 205
180 to 625
1
Power Transistors
2SB967
PC — Ta
IC — VCE
TC=25˚C
TC=Ta
–5
20
16
12
8
–10
–30mA
–25mA
–4
–20mA
–15mA
–3
–10mA
–2
–5mA
Collector current IC (A)
24
–1
25˚C
–8
TC=100˚C
–25˚C
–6
–4
–2
4
–1mA
0
20
40
60
80 100 120 140 160
0
0
Ambient temperature Ta (˚C)
–2
–4
–6
–8
–12
0
hFE — IC
30000
3000
–1
1000
TC=100˚C
–25˚C
– 0.1
– 0.03
25˚C
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
Collector current IC (A)
Cob — VCB
IE=0
f=1MHz
TC=25˚C
160
120
80
40
–3
–10
–30
TC=100˚C
25˚C
300
–25˚C
100
–100
Collector to base voltage VCB (V)
–2.0
VCB=–6V
f=200MHz
TC=25˚C
200
160
120
80
40
30
10
– 0.01 – 0.03 – 0.1 – 0.3
0
–1
–3
Collector current IC (A)
200
–1.6
fT — IE
10000
–3
–1.2
240
Transition frequency fT (MHz)
–10
– 0.8
VCE=–2V
Forward current transfer ratio hFE
–30
– 0.3
– 0.4
Base to emitter voltage VBE (V)
100000
IC/IB=30
0
–1
–10
Collector to emitter voltage VCE (V)
VCE(sat) — IC
–100
Collector to emitter saturation voltage VCE(sat) (V)
VCE=–2V
IB=–40mA –35mA
0
Collector output capacitance Cob (pF)
–12
28
0
2
IC — VBE
–6
Collector current IC (A)
Collector power dissipation PC (W)
32
–10
1
3
10
30
Emitter current IE (mA)
100