SIRECTIFIER HUR29100

HUR29100, HUR29120
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Dimensions TO-220AC
A
C
A
C
C(TAB)
A=Anode, C=Cathode, TAB=Cathode
VRSM
V
1000
1200
HUR29100
HUR29120
Symbol
VRRM
V
1000
1200
Test Conditions
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
Inches
Min.
Max.
0.500 0.580
0.560 0.650
0.380 0.420
0.139 0.161
2.300 0.420
0.100 0.135
0.045 0.070
0.250
0.025 0.035
0.190 0.210
0.140 0.190
0.015 0.022
0.080 0.115
0.025 0.055
Milimeter
Min.
Max.
12.70 14.73
14.23 16.51
9.66 10.66
3.54
4.08
5.85
6.85
2.54
3.42
1.15
1.77
6.35
0.64
0.89
4.83
5.33
3.56
4.82
0.38
0.56
2.04
2.49
0.64
1.39
Maximum Ratings
Unit
IFRMS
IFAVM
TC=115oC; rectangular, d=0.5
35
30
A
IFSM
TVJ=45oC; tp=10ms (50Hz), sine
200
A
14
mJ
1.2
A
EAS
IAR
o
TVJ=25 C; non-repetitive; IAS=11.5A; L=180uH
VA=1.25.VR typ.; f=10kHz; repetitive
-55...+175
175
-55...+150
TVJ
TVJM
Tstg
Ptot
TC=25oC
Md
mounting torque
Weight
typical
o
C
165
W
0.4...0.6
Nm
2
g
HUR29100, HUR29120
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Symbol
Test Conditions
Characteristic Values
typ.
max.
Unit
IR
TVJ=25oC; VR=VRRM
TVJ=150oC; VR=VRRM
250
1
uA
mA
VF
IF=30A; TVJ=150oC
TVJ=25oC
1.81
2.75
V
RthJC
RthCH
trr
IRM
0.9
0.5
IF=1A; -di/dt=200A/us; VR=30V; TVJ=25oC
o
VR=100V; IF=50A; -diF/dt=100A/us; TVJ=100 C
K/W
40
ns
5.5
A
FEATURES
APPLICATIONS
ADVANTAGES
* International standard package
* Planar passivated chips
* Very short recovery time
* Extremely low switching losses
* Low IRM-values
* Soft recovery behaviour
* Epoxy meets UL 94V-0
* Antiparallel diode for high frequency
switching devices
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Inductive heating
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
* Avalanche voltage rated for reliable
operation
* Soft reverse recovery for low
EMI/RFI
* Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
HUR29100, HUR29120
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
70
A
60
5
Qr
IF 50
60
TVJ= 100°C
VR = 600V
C
TVJ= 100°C
VR = 600V
A
50
4
IRM
40
TVJ=150°C
3
40 TVJ=100°C
TVJ= 25°C
30
IF= 60A
IF= 30A
IF= 15A
2
IF= 60A
IF= 30A
IF= 15A
30
20
20
1
10
10
0
0
1
2
3
V
0
100
4
0
A/us 1000
-diF/dt
VF
Fig. 1 Forward current IF versus VF
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
2.0
220
1.2
TVJ= 100°C
IF = 30A
tfr
0.8
VFR
IF= 60A
IF= 30A
IF= 15A
1.0
160
us
tfr
80
180
IRM
600 A/us
800 1000
-diF/dt
Fig. 3 Peak reverse current IRM
versus -diF/dt
VFR
trr
Kf
400
V
200
1.5
200
120
TVJ= 100°C
VR = 600V
ns
0
40
0.4
0.5
140
Qr
0.0
120
0
40
80
120 °C 160
0
0
TVJ
200
400
600
800 1000
A/us
0
400
-diF/dt
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
Fig. 5 Recovery time trr versus -diF/dt
1
0.0
600 A/us
800 1000
diF/dt
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
Constants for ZthJC calculation:
K/W
i
0.1
1
2
3
ZthJC
0.01
0.001
0.00001
200
0.0001
0.001
0.01
s
0.1
t
Fig. 7 Transient thermal resistance junction to case
1
Rthi (K/W)
ti (s)
0.502
0.193
0.205
0.0052
0.0003
0.0162