HUR29100, HUR29120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-220AC A C A C C(TAB) A=Anode, C=Cathode, TAB=Cathode VRSM V 1000 1200 HUR29100 HUR29120 Symbol VRRM V 1000 1200 Test Conditions Dim. A B C D E F G H J K L M N Q Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Maximum Ratings Unit IFRMS IFAVM TC=115oC; rectangular, d=0.5 35 30 A IFSM TVJ=45oC; tp=10ms (50Hz), sine 200 A 14 mJ 1.2 A EAS IAR o TVJ=25 C; non-repetitive; IAS=11.5A; L=180uH VA=1.25.VR typ.; f=10kHz; repetitive -55...+175 175 -55...+150 TVJ TVJM Tstg Ptot TC=25oC Md mounting torque Weight typical o C 165 W 0.4...0.6 Nm 2 g HUR29100, HUR29120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Symbol Test Conditions Characteristic Values typ. max. Unit IR TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM 250 1 uA mA VF IF=30A; TVJ=150oC TVJ=25oC 1.81 2.75 V RthJC RthCH trr IRM 0.9 0.5 IF=1A; -di/dt=200A/us; VR=30V; TVJ=25oC o VR=100V; IF=50A; -diF/dt=100A/us; TVJ=100 C K/W 40 ns 5.5 A FEATURES APPLICATIONS ADVANTAGES * International standard package * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour * Epoxy meets UL 94V-0 * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders * Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch HUR29100, HUR29120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode 70 A 60 5 Qr IF 50 60 TVJ= 100°C VR = 600V C TVJ= 100°C VR = 600V A 50 4 IRM 40 TVJ=150°C 3 40 TVJ=100°C TVJ= 25°C 30 IF= 60A IF= 30A IF= 15A 2 IF= 60A IF= 30A IF= 15A 30 20 20 1 10 10 0 0 1 2 3 V 0 100 4 0 A/us 1000 -diF/dt VF Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 2.0 220 1.2 TVJ= 100°C IF = 30A tfr 0.8 VFR IF= 60A IF= 30A IF= 15A 1.0 160 us tfr 80 180 IRM 600 A/us 800 1000 -diF/dt Fig. 3 Peak reverse current IRM versus -diF/dt VFR trr Kf 400 V 200 1.5 200 120 TVJ= 100°C VR = 600V ns 0 40 0.4 0.5 140 Qr 0.0 120 0 40 80 120 °C 160 0 0 TVJ 200 400 600 800 1000 A/us 0 400 -diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ Fig. 5 Recovery time trr versus -diF/dt 1 0.0 600 A/us 800 1000 diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: K/W i 0.1 1 2 3 ZthJC 0.01 0.001 0.00001 200 0.0001 0.001 0.01 s 0.1 t Fig. 7 Transient thermal resistance junction to case 1 Rthi (K/W) ti (s) 0.502 0.193 0.205 0.0052 0.0003 0.0162