VISHAY SUB70N06-14

SUP/SUB70N06-14
Vishay Siliconix
N-Channel 60-V (D-S), 175C MOSFET
V(BR)DSS (V)
rDS(on) ()
ID (A)
60
0.014
70a
TO-220AB
D
TO-263
G
DRAIN connected to TAB
G
D S
Top View
G D S
S
SUB70N06-14
Top View
N-Channel MOSFET
SUP70N06-14
Parameter
Symbol
Limit
Unit
VGS
20
V
Gate-Source Voltage
70a
TC = 25C
Continuous Drain Current (TJ = 175C)
ID
TC = 100C
A
Pulsed Drain Current
IDM
Avalanche Current
Repetitive Avalanche Energyb
Power Dissipation
L = 0.1 mH
160
IAR
70
EAR
180
mJ
142c
TC = 25C (TO-220AB and TO-263)
PD
TA = 25C (TO-263)d
Operating Junction and Storage Temperature Range
49
TJ, Tstg
W
3.7
–55 to 175
C
Limit
Unit
Parameter
Symbol
PCB Mount (TO-263)d
Junction-to-Ambient
40
RthJA
Free Air (TO-220AB)
Junction-to-Case
62.5
RthJC
C/W
1.05
Notes:
a. Package limited.
b. Duty cycle 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70291
S-57253—Rev. C, 24-Feb-98
www.vishay.com FaxBack 408-970-5600
2-1
SUP/SUB70N06-14
Vishay Siliconix
Parameter
Symbol
Test Condition
Min
Typ
Max
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
VGS(th)
VDS = VGS, IDS = 1 mA
2.0
3.0
4.0
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
VDS = 60 V, VGS = 0 V
1
Zero
Gate
Voltage
Drain
Z
G
V l
D i Current
C
IDSS
VDS = 60 V, VGS = 0 V, TJ = 125C
50
On-State Drain Currenta
ID(on)
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 30 A
0.014
rDS(on)
VGS = 10 V, ID = 30 A, TJ = 125C
0.023
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V
"100
VDS = 60 V, VGS = 0 V, TJ = 175C
a
D i S
Drain-Source
On-State
O S
Resistance
R i
gfs
VDS = 15 V, ID = 30 A
mA
A
150
70
A
VGS = 10 V, ID = 30 A, TJ = 175C
Forward Transconductancea
nA
W
0.028
25
50
S
Dynamicb
Input Capacitance
Ciss
2400
Output Capacitance
Coss
Reversen Transfer Capacitance
Crss
130
Total Gate Chargec
Qg
45
VGS = 0 V,
V VDS = 25 V
V, f = 1 MH
MHz
pF
F
490
70
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
16
Turn-On Delay Timec
td(on)
13
30
Rise
Timec
Turn-Off Delay Timec
Fall Timec
VDS = 30 V, VGS = 10 V,
V ID = 60 A
tr
VDD = 30 V,, RL = 0.47 W
11
30
td(off)
ID ] 60 A, VGEN = 10 V, RG = 2.5 W
30
60
11
25
tf
Source-Drain Diode Ratings and Characteristics (TC =
Continuous Current
nC
C
12
ns
25C)b
Is
70
Pulsed Current
ISM
160
Forward Voltagea
VSD
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
A
IF = 70 A, VGS = 0 V
trr
IRM(REC)
Qrr
1.4
47
IF = 60 A,
A di/dt
di/d = 100 A/ms
A/
V
ns
3.5
A
0.08
mC
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
www.vishay.com FaxBack 408-970-5600
2-2
Document Number: 70291
S-57253—Rev. C, 24-Feb-98
SUP/SUB70N06-14
Vishay Siliconix
Output Characteristics
Transfer Characteristics
100
150
VGS = 10, 9, 8 V
7V
80
I D – Drain Current (A)
I D – Drain Current (A)
125
6V
100
75
50
5V
25
60
40
TC = 125C
20
25C
4V
–55C
0
0
0
2
4
6
8
0
10
2
VDS – Drain-to-Source Voltage (V)
4
6
8
10
VGS – Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
80
0.0200
TC = –55C
0.0175
60
25C
50
125C
r DS(on) – On-Resistance ( Ω )
g fs – Transconductance (S)
70
40
30
20
10
0
0.0150
VGS = 10 V
0.0125
VGS = 20 V
0.0100
0.0075
0.005
0
10
20
30
40
50
60
0
10
20
VGS – Gate-to-Source Voltage (V)
40
50
60
70
ID – Drain Current (A)
Capacitance
Gate Charge
3500
20
V GS – Gate-to-Source Voltage (V)
3000
C – Capacitance (pF)
30
Ciss
2500
2000
1500
1000
Coss
Crss
500
0
VDS = 30 V
ID = 60 A
16
12
8
4
0
0
10
20
30
VDS – Drain-to-Source Voltage (V)
Document Number: 70291
S-57253—Rev. C, 24-Feb-98
40
0
20
40
60
80
100
Qg – Total Gate Charge (nC)
www.vishay.com FaxBack 408-970-5600
2-3
SUP/SUB70N06-14
Vishay Siliconix
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.5
100
2.0
TC = 150C
I S – Source Current (A)
r DS(on) – On-Resistance ( Ω )
(Normalized)
VGS = 10 V
ID = 30 A
1.5
1.0
TC = 25C
10
0.5
0
–50
1
–25
0
25
50
75
100
125
150
175
0.25
TJ – Junction Temperature (C)
0.50
0.75
1.00
1.25
1.50
VSD – Source-to-Drain Voltage (V)
100
500
80
100
I D – Drain Current (A)
I D – Drain Current (A)
Maximum Avalanche and Drain Current
vs. Case Temperature
60
40
Safe Operating Area
Limited
by rDS(on)
1 ms
10 ms
1
0
25
50
75
100
125
150
100 ms,
1 s, dc
TC = 25C
Single Pulse
20
0
100 ms
10
0.1
175
0.1
TC – Case Temperature (C)
1
10
100
VDS – Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10–5
10–4
10–3
10–2
10–1
1
3
Square Wave Pulse Duration (sec)
www.vishay.com FaxBack 408-970-5600
2-4
Document Number: 70291
S-57253—Rev. C, 24-Feb-98
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.