SUP/SUB70N03-09P Vishay Siliconix N-Channel 30-V (D-S), 175C, MOSFET PWM Optimized V(BR)DSS (V) 30 rDS(on) () ID (A) 0.009 @ VGS = 10 V 70a 0.015 @ VGS = 4.5 V 55 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB70N03-09 Top View N-Channel MOSFET SUP70N03-09 Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS 20 TC = 25C Continuous Drain Current (TJ = 175C) TC = 100C Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb L = 0.1 mH Power Dissipation TC = 25C Operating Junction and Storage Temperature Range ID Unit V 70a 50 IDM 180 A IAR 45 EAR 101 PD 93c W TJ, Tstg –55 to 175 C Symbol Limit Unit mJ Parameter PCB Mount (TO-263)d Junction-to-Ambient 40 RthJA Free Air (TO-220AB) Junction-to-Case 62.5 RthJC C/W 1.6 Notes: a. Package limited. b. Duty cycle 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Document Number: 70821 S-59917—Rev. A, 28-Sep-98 www.vishay.com FaxBack 408-970-5600 2-1 SUP/SUB70N03-09P Vishay Siliconix Parameter Symbol Test Condition Min Typ Max V(BR)DSS VGS = 0 V, ID = 250 mA 30 VGS(th) VDS = VGS, IDS = 250 mA 1 Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V 1 Zero Gate Voltage Drain Z G V l D i Current C IDSS VDS = 24 V, VGS = 0 V, TJ = 125C 50 On-State Drain Currenta ID(on) Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V 2 "100 VDS = 24 V, VGS = 0 V, TJ = 175C VDS = 5 V, VGS = 10 V rDS(on) Forward gfs A 0.007 0.009 VGS = 10 V, ID = 30 A, TJ = 125C 0.0135 VGS = 10 V, ID = 30 A, TJ = 175C 0.017 VGS = 4.5 V, ID = 20 A Transconductancea VDS = 15 V, ID = 30 A mA A 150 70 VGS = 10 V, ID = 30 A a D i S O S R i Drain-Source On-State Resistance nA 0.011 30 W 0.015 60 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reversen Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs 2700 VGS = 0 V, V VDS = 25 V V, f = 1 MH MHz pF F 680 360 45 VDS = 15 V, V VGS = 10 V, V ID = 70 A 70 nC C 8.5 Gate-Drain Chargec Qgd 11 Turn-On Delay Timec td(on) 13 20 tr VDD = 15 V,, RL = 0.21 W 7 15 td(off) ID ] 70 A, VGEN = 10 V, RG = 2.5 W 35 60 12 20 Rise Timec Turn-Off Delay Timec Fall Timec tf ns Source-Drain Diode Ratings and Characteristics (TC = 25C)b Continuous Current IS 70 Pulsed Current ISM 180 Forward Voltagea VSD IF = 70 A, VGS = 0 V 1.2 1.5 V trr IF = 70 A, di/dt = 100 A/ms 35 70 ns Reverse Recovery Time A Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com FaxBack 408-970-5600 2-2 Document Number: 70821 S-59917—Rev. A, 28-Sep-98 SUP/SUB70N03-09P Vishay Siliconix Output Characteristics Transfer Characteristics 100 180 VGS = 10 thru 7 V 6V 80 I D – Drain Current (A) I D – Drain Current (A) 150 120 5V 90 60 4V 30 60 40 TC = 125C 20 25C 3V –55C 0 0 0 2 4 6 8 0 10 VDS – Drain-to-Source Voltage (V) 2 Transconductance 4 5 On-Resistance vs. Drain Current 0.030 r DS(on) – On-Resistance ( ) TC = –55C 80 25C 60 125C 40 20 0 0.025 0.020 0.015 VGS = 4.5 V VGS = 10 V 0.010 0.005 0 0 10 20 30 40 50 60 70 0 20 40 ID – Drain Current (A) 60 80 100 40 50 ID – Drain Current (A) Capacitance Gate Charge 10 V GS – Gate-to-Source Voltage (V) 4000 Ciss 3000 C – Capacitance (pF) 3 VGS – Gate-to-Source Voltage (V) 100 g fs – Transconductance (S) 1 2000 Coss 1000 Crss 0 VDS = 15 V ID = 70 A 8 6 4 2 0 0 6 12 18 24 VDS – Drain-to-Source Voltage (V) Document Number: 70821 S-59917—Rev. A, 28-Sep-98 30 0 10 20 30 Qg – Total Gate Charge (nC) www.vishay.com FaxBack 408-970-5600 2-3 SUP/SUB70N03-09P Vishay Siliconix On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.4 100 VGS = 10 V ID = 30 A I S – Source Current (A) r DS(on) – On-Resistance ( W) (Normalized) 2.0 1.6 1.2 0.8 TJ = 150C TJ = 25C 10 0.4 0 –50 1 –25 0 25 50 75 100 125 150 175 0 TJ – Junction Temperature (C) 0.3 0.6 0.9 1.2 1.5 VSD – Source-to-Drain Voltage (V) Safe Operating Area 80 500 60 100 I D – Drain Current (A) I D – Drain Current (A) Maximum Drain Current vs. Case Temperature 40 20 10 ms Limited by rDS(on) 100 ms 10 1 ms TC = 25C Single Pulse 10 ms 100 ms dc 0 1 0 25 50 75 100 125 150 175 0.1 TC – Case Temperature (C) 1 10 VDS – Drain-to-Source Voltage (V) 100 Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–5 10–4 10–3 10–2 10–1 1 3 Square Wave Pulse Duration (sec) www.vishay.com FaxBack 408-970-5600 2-4 Document Number: 70821 S-59917—Rev. A, 28-Sep-98