VISHAY SUP70N03-09P

SUP/SUB70N03-09P
Vishay Siliconix
N-Channel 30-V (D-S), 175C, MOSFET PWM Optimized
V(BR)DSS (V)
30
rDS(on) ()
ID (A)
0.009 @ VGS = 10 V
70a
0.015 @ VGS = 4.5 V
55
D
TO-220AB
TO-263
G
DRAIN connected to TAB
G
D S
Top View
G D S
S
SUB70N03-09
Top View
N-Channel MOSFET
SUP70N03-09
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
20
TC = 25C
Continuous Drain Current (TJ = 175C)
TC = 100C
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energyb
L = 0.1 mH
Power Dissipation
TC = 25C
Operating Junction and Storage Temperature Range
ID
Unit
V
70a
50
IDM
180
A
IAR
45
EAR
101
PD
93c
W
TJ, Tstg
–55 to 175
C
Symbol
Limit
Unit
mJ
Parameter
PCB Mount (TO-263)d
Junction-to-Ambient
40
RthJA
Free Air (TO-220AB)
Junction-to-Case
62.5
RthJC
C/W
1.6
Notes:
a. Package limited.
b. Duty cycle 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 70821
S-59917—Rev. A, 28-Sep-98
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SUP/SUB70N03-09P
Vishay Siliconix
Parameter
Symbol
Test Condition
Min
Typ
Max
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
VGS(th)
VDS = VGS, IDS = 250 mA
1
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
VDS = 24 V, VGS = 0 V
1
Zero
Gate
Voltage
Drain
Z
G
V l
D i Current
C
IDSS
VDS = 24 V, VGS = 0 V, TJ = 125C
50
On-State Drain Currenta
ID(on)
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V
2
"100
VDS = 24 V, VGS = 0 V, TJ = 175C
VDS = 5 V, VGS = 10 V
rDS(on)
Forward
gfs
A
0.007
0.009
VGS = 10 V, ID = 30 A, TJ = 125C
0.0135
VGS = 10 V, ID = 30 A, TJ = 175C
0.017
VGS = 4.5 V, ID = 20 A
Transconductancea
VDS = 15 V, ID = 30 A
mA
A
150
70
VGS = 10 V, ID = 30 A
a
D i S
O S
R i
Drain-Source
On-State
Resistance
nA
0.011
30
W
0.015
60
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reversen Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
2700
VGS = 0 V,
V VDS = 25 V
V, f = 1 MH
MHz
pF
F
680
360
45
VDS = 15 V,
V VGS = 10 V,
V ID = 70 A
70
nC
C
8.5
Gate-Drain Chargec
Qgd
11
Turn-On Delay Timec
td(on)
13
20
tr
VDD = 15 V,, RL = 0.21 W
7
15
td(off)
ID ] 70 A, VGEN = 10 V, RG = 2.5 W
35
60
12
20
Rise Timec
Turn-Off Delay
Timec
Fall Timec
tf
ns
Source-Drain Diode Ratings and Characteristics (TC = 25C)b
Continuous Current
IS
70
Pulsed Current
ISM
180
Forward Voltagea
VSD
IF = 70 A, VGS = 0 V
1.2
1.5
V
trr
IF = 70 A, di/dt = 100 A/ms
35
70
ns
Reverse Recovery Time
A
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
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Document Number: 70821
S-59917—Rev. A, 28-Sep-98
SUP/SUB70N03-09P
Vishay Siliconix
Output Characteristics
Transfer Characteristics
100
180
VGS = 10 thru 7 V
6V
80
I D – Drain Current (A)
I D – Drain Current (A)
150
120
5V
90
60
4V
30
60
40
TC = 125C
20
25C
3V
–55C
0
0
0
2
4
6
8
0
10
VDS – Drain-to-Source Voltage (V)
2
Transconductance
4
5
On-Resistance vs. Drain Current
0.030
r DS(on) – On-Resistance ( )
TC = –55C
80
25C
60
125C
40
20
0
0.025
0.020
0.015
VGS = 4.5 V
VGS = 10 V
0.010
0.005
0
0
10
20
30
40
50
60
70
0
20
40
ID – Drain Current (A)
60
80
100
40
50
ID – Drain Current (A)
Capacitance
Gate Charge
10
V GS – Gate-to-Source Voltage (V)
4000
Ciss
3000
C – Capacitance (pF)
3
VGS – Gate-to-Source Voltage (V)
100
g fs – Transconductance (S)
1
2000
Coss
1000
Crss
0
VDS = 15 V
ID = 70 A
8
6
4
2
0
0
6
12
18
24
VDS – Drain-to-Source Voltage (V)
Document Number: 70821
S-59917—Rev. A, 28-Sep-98
30
0
10
20
30
Qg – Total Gate Charge (nC)
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SUP/SUB70N03-09P
Vishay Siliconix
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.4
100
VGS = 10 V
ID = 30 A
I S – Source Current (A)
r DS(on) – On-Resistance ( W)
(Normalized)
2.0
1.6
1.2
0.8
TJ = 150C
TJ = 25C
10
0.4
0
–50
1
–25
0
25
50
75
100
125
150
175
0
TJ – Junction Temperature (C)
0.3
0.6
0.9
1.2
1.5
VSD – Source-to-Drain Voltage (V)
Safe Operating Area
80
500
60
100
I D – Drain Current (A)
I D – Drain Current (A)
Maximum Drain Current vs.
Case Temperature
40
20
10 ms
Limited
by rDS(on)
100 ms
10
1 ms
TC = 25C
Single Pulse
10 ms
100 ms
dc
0
1
0
25
50
75
100
125
150
175
0.1
TC – Case Temperature (C)
1
10
VDS – Drain-to-Source Voltage (V)
100
Normalized Thermal Transient Impedance, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10–5
10–4
10–3
10–2
10–1
1
3
Square Wave Pulse Duration (sec)
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Document Number: 70821
S-59917—Rev. A, 28-Sep-98