PD - 94083A IRG4BC15UD-S IRG4BC15UD-L INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT C Features • UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching • IGBT Co-packaged with ultra-soft-recovery antiparallel diode • Industry standard D2Pak & TO-262 packages VCES = 600V VCE(on) typ. = 2.02V G @VGE = 15V, IC = 7.8A E n-ch an nel Benefits • Best Value for Appliance and Industrial Applications • High noise immune "Positive Only" gate driveNegative bias gate drive not necessary • For Low EMI designs- requires little or no snubbing • Single Package switch for bridge circuit applications • Compatible with high voltage Gate Driver IC's • Allows simpler gate drive D2Pak IRG4BC15UD-S TO-262 IRG4BC15UD-L Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector CurrentQ Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Max. Units 600 14 7.8 42 42 4.0 16 ± 20 49 19 -55 to +150 V A V W °C 300 (0.063 in. (1.6mm) from case) Thermal Resistance Parameter RθJC RθJC RθCS RθJA RθJA Wt www.irf.com Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount U Junction-to-Ambient (PCB Mount, steady state)V Weight Min. Typ. Max. ––– ––– ––– ––– ––– ––– ––– ––– 0.50 ––– ––– 2 (0.07) 2.7 7.0 ––– 80 40 ––– Units °C/W g (oz) 1 06/12/01 IRG4BC15UD-S/L Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Collector-to-Emitter Breakdown VoltageS ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage VCE(on) Collector-to-Emitter Saturation Voltage V(BR)CES VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Min. 600 ––– ––– ––– ––– Gate Threshold Voltage 3.0 Temperature Coeff. of Threshold Voltage ––– Forward TransconductanceT 4.1 Zero Gate Voltage Collector Current ––– ––– Diode Forward Voltage Drop ––– ––– Gate-to-Emitter Leakage Current ––– Typ. ––– 0.63 2.02 2.56 2.21 ––– -10 6.2 ––– ––– 1.5 1.4 ––– Max. Units Conditions ––– V VGE = 0V, IC = 250µA ––– V/°C VGE = 0V, IC = 1.0mA 2.4 IC = 7.8A VGE = 15V ––– V IC = 14A ––– IC = 7.8A, TJ = 150°C 6.0 VCE = VGE, IC = 250µA ––– mV/°C VCE = VGE, IC = 250µA ––– S VCE = 100V, IC = 7.8A 250 µA VGE = 0V, VCE = 600V 1400 VGE = 0V, VCE = 600V, TJ = 150°C 1.8 V IC = 4.0A 1.7 IC = 4.0A, TJ = 150°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge di(rec)M/dt Diode Peak Rate of Fall of Recovery During tb Min. ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. 23 4.0 9.6 17 20 160 83 0.24 0.26 0.50 16 21 180 220 0.76 7.5 410 37 5.3 28 38 2.9 3.7 40 70 280 240 Max. Units Conditions 35 IC = 7.8A 6.0 nC VCC = 400V 14 VGE = 15V ––– TJ = 25°C ––– ns IC = 7.8A, VCC = 480V 240 VGE = 15V, R G = 75Ω 120 Energy losses include "tail" and ––– diode reverse recovery. ––– mJ 0.63 ––– TJ = 150°C, ––– ns IC = 7.8A, VCC = 480V ––– VGE = 15V, R G = 75Ω ––– Energy losses include "tail" and ––– mJ diode reverse recovery. ––– nH Measured 5mm from package ––– VGE = 0V ––– pF VCC = 30V ––– ƒ = 1.0MHz 42 ns TJ = 25°C 57 TJ = 125°C IF = 4.0A 5.2 A TJ = 25°C 6.7 TJ = 125°C VR = 200V 60 nC TJ = 25°C 110 TJ = 125°C di/dt 200A/µs ––– A/µs TJ = 25°C ––– TJ = 125°C IRG4BC15UD-S/L 12.00 Duty cycle : 50% Tj = 125°C Tsink = 90°C Ta = 55°C Gate drive as specified Turn-on losses include effects of reverse recovery Power Dissipation = 11W for Heatsink Mount Power Dissipation = 1.8W for typical PCB socket Mount Load Current ( A ) 10.00 8.00 60% of rated voltage 6.00 Ideal diodes 4.00 2.00 0.00 0.1 1 10 100 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) I C , Collector-to-Emitter Current (A) 10 TJ = 150 °C 1 TJ = 25 °C V = 15V 20µs PULSE WIDTH GE 0.1 0.1 1 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics 10 I C , Collector-to-Emitter Current (A) 100 100 TJ = 150 °C 10 1 TJ = 25 °C V = 50V 5µs PULSE WIDTH CC 0.1 5.0 10.0 15.0 20.0 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics IRG4BC15UD-S/L 14 VCE , Collector-to Emitter Voltage (V) 4.0 Maximum DC Collector Current(A) 12 10 8 6 4 2 VGE = 15V 80µs PULSE WIDTH IC = 14A 3.0 IC = 7.8A 2.0 IC = 3.9A 1.0 0 25 50 75 100 125 150 -60 -40 -20 TC , Case Temperature ( °C) 0 20 40 60 80 100 120 140 T J , Junction Temperature (°C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.01 0.00001 0.02 0.01 P DM t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 1 IRG4BC15UD-S/L 20 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 600 VGE, Gate-to-Emitter Voltage (V) C, Capacitance (pF) 800 C ies 400 C oes 200 C res VCC = 400V I C = 7.8A 16 12 8 4 0 0 1 10 0 100 5 10 15 20 25 QG , Total Gate Charge (nC) VCE , Collector-to-Emitter Voltage (V) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0.48 10 VCC = 480V VGE = 15V TJ = 25°C I C = 7.8A Total Switching Losses (mJ) Total Switching Losses (mJ) 0.46 0.44 0.42 RG = 75Ω VGE = 15V VCC = 480V IC = 14A 1 IC = 7.8A IC = 3.9A 0.1 0 10 20 30 40 R G, Gate Resistance ( Ω ) Fig. 9 - Typical Switching Losses vs. Gate Resistance 50 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J, Junction Temperature (°C) Fig. 10 - Typical Switching Losses vs. Junction Temperature IRG4BC15UD-S/L 100 VGE = 20V TJ = 125° RG = 75Ω TJ = 150°C VGE = 15V 1.6 VCC = 480V C, Capacitance(pF) Total Switching Losses (mJ) 2.0 1.2 0.8 SAFE OPERATING AREA 10 0.4 0.0 1 2 4 6 8 10 12 14 16 1 10 IC , Collector Current (A) 100 VDS , Drain-to-Source Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 100 TJ = 150°C 10 TJ = 125°C T = 25°C J 1 0.1 0.0 1.0 2.0 3.0 4.0 5.0 6.0 F orward V oltage D rop - V F M(V ) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 1000 IRG4BC15UD-S/L 50 14 I F = 8.0A 45 12 I F = 4.0A VR = 20 0V T J = 1 25 °C T J = 2 5°C I F = 8.0A 10 I F = 4.0A Irr- ( A) trr- (nC) 40 35 8 6 30 4 25 2 VR = 2 00 V T J = 1 2 5°C T J = 2 5 °C 20 100 di f /dt - (A/µ s) 0 100 1000 1000 di f /dt - (A/µ s) Fig. 15 - Typical Recovery Current vs. dif/dt Fig. 14 - Typical Reverse Recovery vs. dif/dt 200 1000 VR = 2 00 V T J = 1 25°C T J = 2 5°C VR = 20 0V T J = 1 25 °C T J = 2 5°C 160 I F = 8.0A di (rec) M/dt- (A /µs) I F = 4.0A Qrr- (nC) 120 I F = 8.0A 80 I F = 4.0A 40 0 100 di f /dt - (A/µ s) 1000 Fig. 16 - Typical Stored Charge vs. dif/dt A 100 100 1000 di f /dt - (A/µ s ) Fig. 17 - Typical di(rec)M/dt vs. dif/dt, IRG4BC15UD-S/L 90% Vge Same ty pe device as D .U.T. +Vge V ce 430µF 80% of Vce D .U .T. Ic 9 0 % Ic 10% Vce Ic 5 % Ic td (o ff) tf E o ff = Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 ∫ t1 + 5 µ S V c e icIcd tdt Vce t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g trr Q rr = Ic ∫ trr id t Icddt tx +Vg tx 10% Vcc 1 0 % Irr V cc D UT VO LTAG E AN D CU RRE NT Vce V pk Irr Vcc 1 0 % Ic Ip k 9 0 % Ic Ic D IO D E R E C O V E R Y W A V E FO R M S tr td (o n ) 5% Vce t1 ∫ t2 ce ieIcd t dt E o n = VVce t1 t2 E re c = D IO D E R E V E R S E REC OVERY ENER GY t3 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr ∫ t4 VVd d idIc d t dt t3 t4 Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr IRG4BC15UD-S/L V g G AT E SIG NA L DE VIC E U ND E R T E ST CU R RE NT D .U .T. VO L TA G E IN D.U .T. CU R RE NT IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit D.U.T. L 1000V Vc* RL= 480V 4 X I C @25°C 0 - 480V 50V 600 0µF 100V Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit IRG4BC15UD-S/L D2Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) M AX. -A- 1.3 2 (.05 2) 1.2 2 (.04 8) 2 1.7 8 (.07 0) 1.2 7 (.05 0) 1 1 0.16 (.4 00 ) RE F. -B - 4.69 (.1 85) 4.20 (.1 65) 6.47 (.2 55 ) 6.18 (.2 43 ) 15 .4 9 (.6 10) 14 .7 3 (.5 80) 3 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 5 .28 (.20 8) 4 .78 (.18 8) 3X 1.40 (.0 55) 1.14 (.0 45) 3X 5 .08 (.20 0) 0.5 5 (.022 ) 0.4 6 (.018 ) 0 .93 (.03 7 ) 0 .69 (.02 7 ) 0 .25 (.01 0 ) M 8.8 9 (.3 50 ) R E F. 1.3 9 (.0 5 5) 1.1 4 (.0 4 5) B A M M IN IM U M R E CO M M E ND E D F O O TP R IN T 1 1.43 (.4 50 ) NO TE S: 1 D IM EN S IO N S A FTER SO L D ER D IP. 2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2. 3 C O N TRO L LIN G D IM EN SIO N : IN C H . 4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S. LE A D A SS IG N M E N TS 1 - G A TE 2 - D R AIN 3 - S O U RC E 8.89 (.3 50 ) 17 .78 (.70 0) 3 .8 1 (.15 0) 2 .08 (.08 2) 2X D2Pak Part Marking Information IN TE R N A TIO N A L R E C T IF IE R LO G O A S S E M B LY LO T C O D E A PART NUM BER F530S 9 24 6 9B 1M DATE CODE (Y YW W ) YY = Y E A R W W = W EEK 2.5 4 (.100 ) 2X IRG4BC15UD-S/L TO-262 Package Outline TO-262 Part Marking Information IRG4BC15UD-S/L D2Pak Tape & Reel Information TR R 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4.1 0 (.1 6 1 ) 3.9 0 (.1 5 3 ) F E ED D IR E C TIO N 1 .8 5 (.0 73 ) 1 .6 5 (.0 65 ) 1 .6 0 (.06 3) 1 .5 0 (.05 9) 1 1.6 0 (.45 7) 1 1.4 0 (.44 9) 0.3 68 (.01 45 ) 0.3 42 (.01 35 ) 15.4 2 (.60 9) 15.2 2 (.60 1) 2 4.30 (.9 5 7) 2 3.90 (.9 4 1) TR L 1 0.90 (.42 9) 1 0.70 (.42 1) 1.75 (.06 9) 1.25 (.04 9) 4.72 (.1 3 6) 4.52 (.1 7 8) 16 .10 (.63 4) 15 .90 (.62 6) F E E D D IR E C TIO N 13.50 (.532) 12.80 (.504) 2 7.40 (1.079) 2 3.90 (.941) 4 330 .00 (14.173) M AX . 60.00 (2.3 62) MIN . NO T ES : 1. C OM F OR MS TO EIA-418. 2. C ON TR O LLING DIM ENS IO N: M ILLIM ETER . 3. D IME NSIO N M EAS URE D @ HUB . 4. IN CLU DE S F LAN GE DISTO RT IO N @ O U TER E DG E. Notes: Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature. R VCC=80%(VCES), VGE=20V, L=10µH, RG = 75Ω 26 .40 (1.039) 24 .40 (.961) 30.40 (1.197) M AX. 4 3 V This applies to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. S Pulse width ≤ 80µs; duty factor ≤ 0.1%. T Pulse width 5.0µs, single shot. U This only applies to TO-262 package. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.06/01