INTERSIL RFF60P06

RFF60P06
Data Sheet
September 1998
25A†, 60V, 0.030 Ohm, P-Channel Power
MOSFET
The RFF60P06 P-Channel power MOSFET is manufactured
using the MegaFET process. This process, which uses
feature sizes approaching those of LSI circuits gives
optimum utilization of silicon, resulting in outstanding
performance. It was designed for use in applications such as
switching regulators, switching converters, motor drivers,
and relay drivers. These transistors can be operated directly
from integrated circuits.
Reliability screening is available as either commercial or
TX/TXV equivalent of MIL-S-19500. Contact Intersil
Corporation High-Reliability Marketing group for any desired
deviations from the data sheet.
File Number
3975.2
Features
• 25A, 60V
• rDS(ON) = 0.030Ω
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 150oC Operating Temperature
• Reliability Screened
Symbol
D
Formerly developmental type TA09835.
Commercial Version: RFG60P06E.
G
† Current is limited by the package capability.
Ordering Information
PART NUMBER
RFF60P06
S
PACKAGE
TO-254AA
BRAND
RFF60P06
NOTE: When ordering, use the entire part number.
Packaging
JEDEC TO-254AA
PACKAGE TAB
(ISOLATED)
GATE
SOURCE
DRAIN
CAUTION: Berylia Warning per MIL-S-19500.
Refer to package specifications.
4-181
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999.
RFF60P06
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Single Pulse Avalanche Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
RFF60P06
-60
-60
±20
25 (Note 5)
Refer to Peak Current Curve
Refer to UIS Curve
125
1.0
-55 to 150
UNITS
V
V
V
A
260
oC
W
W/oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
PARAMETER
SYMBOL
BVDSS
ID = 250µA, VGS = 0V
-60
-
-
V
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250µA
Zero Gate Voltage Drain Current
IDSS
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
IGSS
rDS(ON)
Turn-On Time
tON
Turn-On Delay Time
td(ON)
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
TEST CONDITIONS
-2.0
-3.0
-4.5
V
VDS = Rated BVDSS,VGS = 0V
-
-
-25
µA
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC
-
-
-250
µA
VGS = ±20V, TC = 125oC
-
-
±100
µA
ID = 25A, VGS = -10V, (Figure 9)
-
-
0.030
Ω
VDD = -30V, ID = 25A, RL = 1.2Ω, VGS = -10V
RG = 2.35Ω
(Figures 13, 16, 17)
-
-
195
ns
-
25
70
ns
tr
-
50
125
ns
td(OFF)
-
80
200
ns
tf
-
30
75
ns
tOFF
-
-
275
ns
-
-
450
nC
-
-
225
nC
-
-
15
nC
-
7200
-
pF
-
1800
-
pF
-
400
-
pF
Total Gate Charge
Qg(TOT)
VGS = 0 to -20V
Gate Charge at -10V
Qg(-10)
VGS = 0 to -10V
Threshold Gate Charge
Qg(TH)
VGS = 0 to -2V
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
VDD = -30V, ID = 25A,
RL = 1.2Ω
IG(REF) = -4.2mA
(Figures 18, 19)
VDS = -25V, VGS = 0V
f = 1MHz
Thermal Resistance Junction to Case
RθJC
-
-
1.0
oC/W
Thermal Resistance Junction to Ambient
RθJA
-
-
48
oC/W
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage (Note 2)
SYMBOL
VSD
Diode Reverse Recovery Time
trr
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ISD = -25A
-
-1.1
-1.5
V
ISD = -25A, dISD/dt = -100A/µs
-
130
200
ns
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3)
4. Current is limited by package capability.
4-182
RFF60P06
Unless Otherwise Specified
-30
1.0
-25
ID , DRAIN CURRENT (A)
1.2
0.8
0.6
0.4
0.2
-20
-15
-10
-5
0
POWER DISSIPATION MULTIPLIER
Typical Performance Curves
0
0
25
50
75
100
125
TC , CASE TEMPERATURE (oC)
25
150
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
THERMAL IMPEDANCE
ZθJC, NORMALIZED
1
0.5
0.2
PDM
0.1
0.1
t1
0.05
0.02
0.01
SINGLE PULSE
0.01
10-5
10-4
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
10-3
10-1
10-2
100
101
t, RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
-103
-100
100µs
1ms
-10
-1
-1
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
TC = 25oC
TJ = MAX RATED
10ms
100ms
DC
VDSS MAX = -60V
-10
VDS , DRAIN-TO-SOURCE VOLTAGE (V)
-100
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
4-183
IDM , PEAK CURRENT (A)
ID , DRAIN CURRENT (A)
-500
FOR TEMPERATURES ABOVE 25oC
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
 150 – T C
I = I 25  ----------------------
125 

-102
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
VGS = -10V
-101
10-5
10-4
10-3
10-2
TC = 25oC
10-1
100
t, PULSE WIDTH (s)
FIGURE 5. PEAK CURRENT CAPABILITY
101
RFF60P06
Typical Performance Curves
(Continued)
-150
If R = 0
tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1]
-100
-75
STARTING TJ = 25oC
VGS = -6V
-50
100
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
0
-2
-4
-6
-8
VDS, DRAIN TO SOURCE VOLTAGE (V)
-10
2.5
-150
25oC
-55oC
VDD = -15V
PULSE TEST
PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX
-125
150oC
-100
-75
-50
-25
0
0
-2
-4
-6
-8
PULSE DURATION = 250µs, VGS = -10V, ID = 25A
2.0
1.5
1.0
0.5
0
-80
-10
FIGURE 8. TRANSFER CHARACTERISTICS
2.0
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
1.0
0.5
0
0
40
80
120
160
TJ , JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
4-184
40
80
120
160
2.0
1.5
-40
0
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
VGS = VDS, ID = 250µA
-80
-40
TJ , JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
NORMALIZED GATE
THRESHOLD VOLTAGE
VGS = -5V
VGS = -4.5V
FIGURE 7. SATURATION CHARACTERISTICS
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
IDS(ON), DRAIN TO SOURCE CURRENT (A)
PULSE DURATION = 250µs
TC = 25oC
-25
1
10
tAV, TIME IN AVALANCHE (ms)
VGS = -7V
-75
0
0.1
VGS = -8V
-100
STARTING TJ = 150oC
-10
VGS = -10V
VGS = -20V
-125
ID , DRAIN CURRENT (A)
IAS , AVALANCHE CURRENT (A)
-200
Unless Otherwise Specified
ID = 250µA
1.5
1.0
0.5
0
-80
-40
0
40
80
120
TJ , JUNCTION TEMPERATURE (oC)
160
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
RFF60P06
Unless Otherwise Specified
(Continued)
-10
C, CAPACITANCE (pF)
CISS
6000
VGS = 0V, f = 0.1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGS
4000
COSS
2000
CRSS
VDS , DRAIN TO SOURCE VOLTAGE (V)
-60
8000
VDD = BVDSS
-7.5
RL = 1.0Ω
IG(REF) = 4.2mA
VGS = -10V
0.75 BVDSS
0.75 BVDSS
-30
-15
0.50 BVDSS
0.50 BVDSS
0.25 BVDSS
0.25 BVDSS
-5.0
-2.5
0
0
0
0
VDD = BVDSS
-45
-5
-10
-15
-20
VDS , DRAIN TO SOURCE VOLTAGE (V)
-25
20
IG(REF)
t, TIME (µs)
IG(ACT)
80
IG(REF)
IG(ACT)
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuit and Waveforms
VDS
tAV
L
0
VARY tP TO OBTAIN
REQUIRED PEAK IAS
-
RG
+
0V
VGS
VDD
DUT
VDD
tP
IAS
IAS
VDS
tP
0.01Ω
BVDSS
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
tON
tOFF
td(OFF)
td(ON)
tr
VDS
0
RL
tf
10%
10%
VGS
VDS
VDD
+
VGS
DUT
RGS
VGS
0
90%
90%
10%
50%
50%
PULSE WIDTH
90%
FIGURE 16. SWITCHING TIME TEST CIRCUIT
4-185
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
VGS , GATE TO SOURCE VOLTAGE (V)
Typical Performance Curves
RFF60P06
Test Circuit and Waveforms (Continued)
VDS
RL
VDS
Qg(TH)
0
VGS = -2V
VGS
-
VGS = -10V
-VGS
VDD
Qg(-10)
+
DUT
VGS = -20V
VDD
IG(REF)
Qg(TOT)
0
IG(REF)
FIGURE 18. GATE CHARGE TEST CIRCUIT
Data Packages - Intersil Power Transistors
TX and TXV Equivalents
1. TX/TXV Equivalent - Standard Data Package
A. Certificate of Compliance
B. Assembly Flow Chart
C. Preconditioning
- Attributes Data Sheet
D. Group A
- Attributes Data Sheet
E. Group B
- Attributes Data Sheet
F. Group C
- Attributes Data Sheet
2. TX/TXV Equivalent - Optional Data Package
A. Certificate of Compliance
B. Assembly Flow Chart
C. Preconditioning
- Attributes Data Sheet
- Precondition Lot Traveler
- Pre and Post Burn-In Read and Record Data
D. Group A
- Attributes Data Sheet
- Group A Lot Traveler
E. Group B
- Attributes Data Sheet
- Group B Lot Traveler
- Pre and Post Read and Record Data for Intermittent
Operating Life (Subgroup B3)
- Bond Strength Data (Subgroup B3)
- Pre and Post High Temperature Operating Life
Read and Record Data (Subgroup B6)
F. Group C
- Attributes Data Sheet
- Group C Lot Traveler
- Pre and Post Read and Record Data for Intermittent
Operating Life (Subgroup C6)
- Bond Strength Data (Subgroup C6)
4-186
FIGURE 19. GATE CHARGE WAVEFORMS
RFF60P06
PSPICE Electrical Model
.SUBCKT RFF60P06 2 1 3
REV 9/20/94
CA 12 8 1.01e-8
CB 15 14 1.05e-8
CIN 6 8 6.9e-9
GATE
1
LGATE
RGATE
9
VTO
-
EBREAK 17
18
16
MOS1
6
8
S1A
14
13
13
CA
RBREAK 17 18 RBKMOD 1
RDRAIN 5 16 RDSMOD 12.83e-3
RGATE 9 20 1.55
RIN 6 8 1e9
RSOURCE 8 7 RDSMOD 3.25e-3
RVTO 18 19 RVTOMOD 1
DBODY
11
LSOURCE
RSOURCE
+
6
EGS
8
-
15
17
RBREAK
S2B
18
RVTO
CB
14
+
5
EDS
8
IT
-
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 8 19 DC 1
VTO 21 6 -0.83
.MODEL DBDMOD D (IS=1.24e-12 RS=4.72e-3 TRS1=1.43e-3 TRS2=-4.91e-7 CJO=6.98e-9 TT=1.5e-7)
.MODEL DBKMOD D (RS=1.11e-1 TRS1=1.34e-3 TRS2=4.46e-12)
.MODEL DPLCAPMOD D (CJO=15e-10 IS=1e-30 N=10)
.MODEL MOSMOD PMOS (VTO=-3.71 KP=31.5 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL RBKMOD RES (TC1=9.42e-4 TC2=0)
.MODEL RDSMOD RES (TC1=5.85e-3 TC2=7.69e-6)
.MODEL RVTOMOD RES (TC1=-3.39e-3 TC2=1.07e-6)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=4.6 VOFF=2.6)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=2.6 VOFF=4.6)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=1.16 VOFF=-3.84)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3.84 VOFF=1.16)
.ENDS
NOTE: For further discussion of the PSPICE model consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; written by William J. Hepp and C. Frank Wheatley.
4-187
3
7
S2A
13
8
S1B
MOS1 16 6 8 8 MOSMOD M=0.99
MOS2 16 21 8 8 MOSMOD M=0.01
-
DBREAK
CIN
IT 8 17 1
12
+
21
RIN
LDRAIN 2 5 1e-9
LGATE 1 9 7.9e-9
LSOURCE 3 7 4.18e-9
2
MOS2
-
18
20 8
LDRAIN
RDRAIN
6
8
EVTO
+
EBREAK 5 11 17 18 -76.35
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 8 6 1
EVTO 20 6 8 18 1
ESG
+
DPLCAP
+
DBODY 5 7 DBDMOD
DBREAK 7 11 DBKMOD
DPLCAP 10 5 DPLCAPMOD
DRAIN
5
10
19
-
VBAT
+
RFF60P06
Screening Information
Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table).
Delta Tests and Limits (JANTX/JANTXV Equivalent)
PARAMETER
SYMBOL
Gate to Source Leakage Current
Gate Threshold Voltage
MAX
UNITS
IGSS
VGS = ±20V, TC = 25oC
±20 (Note 4)
nA
IDSS
VDS = 80% Rated Value, TC = 25oC
±25 (Note 4)
µA
rDS(ON)
TC = 125oC at Rated ID
±20% (Note 5)
Ω
VGS(TH)
ID = 1.0mA, TC = 25oC
±20% (Note 5)
V
Zero Gate Voltage Drain Current
On Resistance
TEST CONDITIONS
NOTES:
5. Or 100% of Initial Reading (whichever is greater).
6. Of Initial Reading.
Screening Information
TEST
JANTX/JANTXV EQUIVALENT
Gate Stress
VGS = -30V, t = 250µs
Pind
Optional
PDA
10%
Pre Burn-In Test (Note 1)
MIL-S-19500 Group A, Subgroup 2 (All Static Tests at 25oC)
Steady State Gate Bias (Gate Stress)
MIL-STD-750, Method 1042, Condition B
VGS = 80% of Rated Value,
TA = 150oC, Time = 48 hours
Interim Electrical Tests (Note 6)
All Delta Parameters Listed in the Delta Tests and Limits Table
Steady State Reverse Bias (Drain Stress)
MIL-STD-750, Method 1042, Condition A
VDS = 80% of Rated Value,
TA = 150oC, Time = 168 hours
Final Electrical Tests (Note 6)
MIL-S-19500, Group A, Subgroup 2
NOTE:
7. Test limits are identical pre and post burn-in.
Additional Screening Tests
PARAMETER
SYMBOL
MAX
UNITS
VDS = -48V, t = 10ms
8.0
A
IAS
VGS(PEAK) = -15V, L = 0.1mH
75
A
Thermal Response
∆VSD
tH = 100ms; VH = 25V, IH = 4A
142
mV
Thermal Impedance
∆VSD
tH = 500ms; VH = 25V, IH = 4A
182
mV
Safe Operating Area
SOA
Unclamped Inductive Switching
TEST CONDITIONS
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
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4-188
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