FAIRCHILD FFB2907A_1

E2
MMPQ2907A
C2
B2
E1
C1
C1
E1
C2
SC70-6
Mark: .2F
B2
E3
E4
B4
B2
B1
pin #1
B1
E2
B3
E2
E1
pin #1 B1
SuperSOT-6
NOTE: The pinouts are symmetrical; pin 1 and pin
4 are interchangeable. Units inside the carrier can
be of either orientation and will not affect the
functionality of the device.
SOIC-16
Mark:
MMPQ2907A
Mark: .2F
pin #1 C1
C2
C1
C3
C2
C4
C4
C3
Dot denotes pin #1
FFB2907A / FMB2907A / MMPQ2907A
FMB2907A
FFB2907A
PNP Multi-Chip General Purpose Amplifier
This device is designed for use as a general purpose amplifier and switch requiring
collector currents to 500 mA. Sourced from Process 63.
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
60
V
VCBO
Collector-Base Voltage
60
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current - Continuous
600
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD
RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
 1998 Fairchild Semiconductor Corporation
Max
FFB2907A
300
2.4
415
FMB2907A
700
5.6
180
Units
MMPQ2907A
1,000
8.0
125
240
mW
mW/°C
°C/W
°C/W
°C/W
4
(continued)
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Units
OFF CHARACTERISTICS
V(BR)CEO
IC = 10 mA, IB = 0
V(BR)CBO
Collector-Emitter Breakdown
Voltage*
Collector-Base Breakdown Voltage
60
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IC = 10 µA, IE = 0
60
V
IE = 10 µA, IC = 0
5.0
IB
Base Cutoff Current
VCB = 30 V, VEB = 0.5 V
ICEX
Collector Cutoff Current
VCE = 30 V, VBE = 0.5 V
ICBO
Collector Cutoff Current
VCB = 50 V, IE = 0
VCB = 50 V, IE = 0, TA = 125°C
V
50
nA
50
nA
0.02
20
µA
µA
ON CHARACTERISTICS
hFE
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage*
VBE(sat)
Base-Emitter Saturation Voltage
IC = 0.1 mA, VCE = 10 V
IC = 1.0 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 150 mA, VCE = 10 V*
IC = 500 mA, VCE = 10 V*
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
IC = 150 mA, IB = 15 mA*
IC = 500 mA, IB = 50 mA
75
100
100
100
50
300
0.4
1.6
1.3
2.6
V
V
V
V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
Cobo
Output Capacitance
Cibo
Input Capacitance
IC = 50 mA, VCE = 20 V,
f = 100 MHz
VCB = 10 V, IE = 0,
f = 100 kHz
VEB = 2.0 V, IC = 0,
f = 100 kHz
250
MHz
6.0
pF
12
pF
SWITCHING CHARACTERISTICS
ton
Turn-on Time
VCC = 30 V, IC = 150 mA,
30
ns
td
Delay Time
IB1 = 15 mA
8.0
ns
tr
Rise Time
20
ns
toff
Turn-off Time
VCC = 6.0 V, IC = 150 mA
80
ns
ts
Storage Time
IB1 = IB2 = 15 mA
60
ns
tf
Fall Time
20
ns
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Spice Model
PNP (Is=650.6E-18 Xti=3 Eg=1.11 Vaf=115.7 Bf=231.7 Ne=1.829 Ise=54.81f Ikf=1.079 Xtb=1.5 Br=3.563 Nc=2
Isc=0 Ikr=0 Rc=.715 Cjc=14.76p Mjc=.5383 Vjc=.75 Fc=.5 Cje=19.82p Mje=.3357 Vje=.75 Tr=111.3n Tf=603.7p
Itf=.65 Vtf=5 Xtf=1.7 Rb=10)
FFB2907A / FMB2907A / MMPQ2907A
PNP Multi-Chip General Purpose Amplifier
(continued)
500
VCE = 5V
400
125 °C
300
200
100
0
0.1
25 °C
- 40 °C
0.3
1
3
10
30
100
I C - COLLECTOR CURRENT (mA)
300
Base-Emitter Saturation
Voltage vs Collector Current
1
- 40 °C
0.8
25 °C
0.6
125 °C
0.4
β = 10
0.2
0
1
10
100
I C - COLLECTOR CURRENT (mA)
500
VCESAT - COLLECTOR EMITTE R VOLTAGE (V)
Typical Pulsed Current Gain
vs Collector Current
Collector-Emitter Saturation
Voltage vs Collector Current
0.5
β = 10
0.4
0.3
25 °C
0.2
0.1
125 °C
- 40 °C
0
V BE( ON)- BAS E EMITTER ON VOLTAGE (V)
V BESAT - BASE EMITTER VOLTAGE (V)
h FE - TYPICAL PULSED CURRENT GAIN
Typical Characteristics
1
500
Base Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
- 40 °C
25 °C
0
0.1
4
125 °C
VCE = 5V
0.2
1
10
I C - COLLECTOR CURRE NT (mA)
25
Input and Output Capacitance
vs Reverse Bias Voltage
Collector-Cutoff Current
vs Ambient Temperature
20
100
V CB = 35V
CAPACITANCE (pF)
I CBO - COLLE CTOR CURRENT (nA)
10
100
I C - COLLECTOR CURRE NT (mA)
10
1
0.1
0.01
25
50
75
100
T A - AMBIE NT TEMP ERATURE (° C)
125
FFB2907A / FMB2907A / MMPQ2907A
PNP Multi-Chip General Purpose Amplifier
16
12
C ib
8
4
0
0.1
C ob
1
10
REVERSE BIAS VOLTAGE (V)
50
(continued)
Typical Characteristics
(continued)
Switching Times
vs Collector Current
250
I B1 = I B2 =
Turn On and Turn Off Times
vs Collector Current
500
Ic
I B1 = I B2 =
10
400
200
V cc = 15 V
ts
150
TIME (nS)
TIME (nS)
V cc = 15 V
100
tr
300
200
tf
t off
100
50
t on
td
0
10
100
I C - COLLECTOR CURRENT (mA)
0
10
1000
50
20
t r = 15 V
5
30 ns
2
60 ns
1
10
100
I C - COLLECTOR CURRENT (mA)
100
I C - COLLECTOR CURRENT (mA)
1000
Power Dissipation vs
Ambient Temperature
PD - POWE R DIS SIPATION (W)
I B1 - TURN 0N BASE CURRENT (mA)
Rise Time vs Collector
and Turn On Base Currents
10
Ic
10
500
1
SOIC-16
SOT-6
0.75
0.5
SC70 -6
0.25
0
0
25
50
75
100
TE MPE RATURE (°C)
125
150
FFB2907A / FMB2907A / MMPQ2907A
PNP Multi-Chip General Purpose Amplifier
(continued)
h oe
h re
2
h fe
1
0.5
h ie
0.2
VCE = -10 V
T A = 25 oC
0.1_
1
_
_
_
_
2
5
10
20
I C - COLLECTOR CURRENT (mA)
_
50
CHAR. RELATIVE TO VALUES AT VCE = -10V
Common Emitter Characteristics
5
CHAR. RELATIVE TO VALUES AT TA = 25oC
CHAR. RELATIVE TO VALUES AT I C= -10mA
Typical Common Emitter Characteristics
(f = 1.0kHz)
Common Emitter Characteristics
1.3
1.2
h re and hoe
h re
h ie
h fe
hoe
1.1
1
h ie
0.9
I C = -10mA
T A = 25oC
h fe
0.8
-4
-8
-12
-16
V CE - COLLECTOR VOLTAGE (V)
-20
FFB2907A / FMB2907A / MMPQ2907A
PNP Multi-Chip General Purpose Amplifier
Common Emitter Characteristics
1.5
I C = -10mA
1.4 V = -10 V
CE
1.3
1.2
h fe
h ie
h re
hoe
1.1 hoe
1
0.9
0.8
4
h re
h ie
0.7
0.6
0.5
-40
h fe
-20
0
20
40
60
80
T A - AMBIENT TEMPERATURE ( o C)
100
(continued)
Test Circuits
- 30 V
200 Ω
Ω
1.0 KΩ
0
- 16 V
50 Ω
≤ 200ns
FIGURE 1: Saturated Turn-On Switching Time Test Circuit
1.5 V
1 KΩ
Ω
- 6.0 V
37 Ω
Ω
1.0 KΩ
0
- 30 V
50 Ω
≤ 200ns
FIGURE 2: Saturated Turn-Off Switching Time Test Circuit
FFB2907A / FMB2907A / MMPQ2907A
PNP Multi-Chip General Purpose Amplifier
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST 
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
PowerTrench 
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER 
SMART START™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G