DISCRETE SEMICONDUCTORS DATA SHEET BLU45/12 UHF power transistor Product specification August 1986 Philips Semiconductors Product specification UHF power transistor BLU45/12 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor in SOT-119 envelope primarily intended for use in mobile radio transmitters in the 470 MHz communications band. • multi-base structure and emitter-ballasting resistors for an optimum temperature profile. The transistor has a 6-lead flange envelope with a ceramic cap. All leads are isolated from the flange. • internal matching to achieve an optimum wideband capability and high power gain. • gold metallization ensures excellent reliability. QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in a common-emitter class-B circuit MODE OF OPERATION narrow band; c.w. VCE V f MHz PL W GP dB ηC % 12,5 470 45 > 4,8 > 55 PIN CONFIGURATION PINNING PIN handbook, halfpage 1 2 3 4 5 6 DESCRIPTION 1 emitter 2 emitter 3 base 4 collector 5 emitter 6 emitter MSB006 Fig.1 Simplified outline, SOT119A. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. August 1986 2 Philips Semiconductors Product specification UHF power transistor BLU45/12 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter) peak value VCBOM max. 36 V Collector-emitter voltage (open base) VCEO max. 16,5 V Emitter-base voltage (open collector) VEBO max. 4 V d.c. or average IC max. 9 A (peak value); f > 1 MHz ICM max. 27 A 87 W Collector current Total power dissipation at Tmb = 25 °C; f > 1 MHz Ptot max. Storage temperature Tstg −65 to + 150 °C Operating junction temperature Tj max. 200 °C MDA335 160 handbook, halfpage Prf (W) 120 II 80 I 40 0 I 0 40 80 120 160 200 Th (°C) Continuous operation (f > 1 MHz). II Short-time operation during mismatch (f > 1 MHz). Fig.2 Power/temperature derating curves. MAXIMUM THERMAL RESISTANCE Dissipation = 54 W; Tamb = 25 °C From junction to mounting base (r.f. operation) Rth j-mb max. 1,7 K/W From mounting base to heatsink Rth mb-h max. 0,2 K/W August 1986 3 Philips Semiconductors Product specification UHF power transistor BLU45/12 CHARACTERISTICS Tj = 25 °C unless otherwise specified Collector-base breakdown voltage open emitter; IC = 100 mA V(BR)CBO min. 36 V V(BR)CEO min. 16,5 V V(BR)EBO min. 4 V ICES max. 44 mA ESBR min. 15 mJ min. 15 typ. 60 Collector-emitter breakdown voltage open base; IC = 200 mA Emitter-base breakdown voltage open collector; IE = 20 mA Collector cut-off current VBE = 0; VCE = 16 V Second breakdown energy L = 25 mH; f = 50 Hz; RBE = 10 Ω D.C. current gain VCE = 10 V; IC = 8 A hFE Collector capacitance at f = 1 MHz IE = ie = 0; VCB = 12,5 V Cc typ. 170 pF Cre typ. 100 pF Ccf typ. 3 pF Feedback capacitance at f = 1 MHz IC = 0; VCE = 12,5 V Collector-flange capacitance MDA336 100 MDA337 400 handbook, halfpage handbook, halfpage Cc (pF) hFE 80 VCE = 12.5 V 300 10 V 60 200 40 100 20 0 0 0 Fig.3 10 20 30 IC (A) 0 40 D.C. current gain versus collector current; Tj = 25 °C. August 1986 Fig.4 4 4 8 12 16 20 VCB (V) Output capacitance versus VCB; IE = ie = 0; f = 1 MHz. Philips Semiconductors Product specification UHF power transistor BLU45/12 APPLICATION INFORMATION R.F. performance at Th = 25 °C in a common-emitter class-B circuit MODE OF OPERATION narrow band; c.w. VCE V f MHz PL W Gp dB ηC % 12,5 470 45 > 4,8 typ. 5,8 > 55 typ. 61 handbook, full pagewidth ,, ,, ,,,,, ,,,, L5 C1 50 Ω C3 C7 C12 L6 C5 50 Ω L2 L1 C6 C2 C13 D.U.T. C4 C11 L7 C8 L3 R1 C9 L4 L8 R2 +VCC C10 MDA338 Fig.5 Class-B test circuit at f = 470 MHz. List of components: C1 = C13 = 1,8 to 10 pF film dielectric trimmer (cat. no. 2222 809 05002) C2 = C11 = 1,4 to 5,5 pF film dielectric trimmer (cat. no. 2222 809 09001) C3 = 12 pF multilayer ceramic chip capacitor(1) C4 = C5 = 8,2 pF multilayer ceramic chip capacitor(2) C6 = C7 = 15 pF multilayer ceramic chip capacitor(1) C8 = 110 pF multilayer ceramic chip capacitor(1) C9 = 3 × 100 nF multilayer ceramic chip capacitor in parallel C10 = 2,2 µF (35 V) electrolytic capacitor C12 = 5,6 pF multilayer ceramic chip capacitor(1) L1 = 34,6 Ω stripline (17 mm × 4 mm) L2 = L5 = 25,3 Ω stripline (6 mm × 6 mm) L3 = 45 nH; 4 turns, closely wound enamelled Cu-wire (0,5 mm); int. dia. 2,5 mm; leads 2 × 5 mm L4 = L8 = Ferroxcube wideband h.f. choke, grade 3B (cat. no. 4312 020 36642) L6 = 29,2 Ω stripline (25,5 mm × 5 mm) L7 = 10 nH; 1 turn Cu-wire (1,0 mm); int. dia. 5 mm; leads 2 × 5 mm R1 = 1 Ω ± 5% (0,4 W) metal film resistor R2 = 10 Ω ± 5% (1,0 W) metal film resistor Notes 1. American Technical Ceramics capacitor type B or capacitor of the same quality. 2. Idem type A. August 1986 5 Philips Semiconductors Product specification UHF power transistor BLU45/12 Striplines are on a double Cu-clad printed circuit board with P.T.F.E. fibre-glass dielectric (εr = 2,2); thickness 1⁄32 inch. 97 mm handbook, full pagewidth rivets rivets 70 mm Cu - straps +VCC L8 L4 R2 R1 C8 C10 C9 L7 C1 C3 L3 C5 L1 L2 C7 C13 L6 L5 C4 C12 C6 C2 C11 MDA339 The circuit and the components are on one side of the PTFE fibre-glass board; the other side is unetched copper serving as a ground plane. Earth connections are made by fixing screws, hollow rivets and copper straps around the board and under the bases to provide a direct contact between the copper on the component side and the ground plane. Fig.6 Printed circuit board and component layout for 470 MHz class-B test circuit. August 1986 6 Philips Semiconductors Product specification UHF power transistor BLU45/12 MDA340 80 MDA341 6 handbook, halfpage 70 handbook, halfpage G p (W) Gp (dB) ηC (%) 60 5.5 65 40 5 60 PL ηC 4.5 20 55 4 0 0 10 20 30 PS (W) 40 20 Typical values; VCE = 12,5 V; f = 470 MHz; Th = 25 °C () and 70 °C (− − −); Rth mb-h = 0,2 K/W; class-B operation. 40 50 60 PL (W) 50 70 Typical values; VCE = 12,5 V; f = 470 MHz; Th = 25 °C () and 70 °C (− − −); Rth mb-h = 0,2 K/W; class-B operation. Fig.7 Load power versus source power. Fig.8 RUGGEDNESS The BLU45/12 is capable of withstanding a full load mismatch (VSWR = 50 through all phases) up to 55 W under the following conditions: VCE = 15,5 V; f = 470 MHz; Th = 25 °C; Rth mb-h = 0,2 K/W. August 1986 30 7 Power gain and efficiency versus load power. Philips Semiconductors Product specification UHF power transistor BLU45/12 MDA342 6 MDA343 2 handbook, halfpage handbook, halfpage Zi (Ω) ZL (Ω) RL xi 4 0 2 −2 ri 0 400 XL 440 480 f (MHz) −4 400 520 440 480 f (MHz) 520 Typical values; VCE = 12,5 V; PL = 45 W; f = 400 to 512 MHz; Th = 25 °C; Rth mb-h = 0,2 K/W; class-B operation Typical values; VCE = 12,5 V; PL = 45 W; f = 400 to 512 MHz; Th = 25 °C; Rth mb-h = 0,2 K/W; class-B operation Fig.9 Fig.10 Load impedance (series components). Input impedance (series components). MDA344 10 Gp handbook, halfpage (dB) 8 6 4 2 0 400 450 500 550 f (MHz) 600 Typical values; VCE = 12,5 V; PL = 45 W; f = 400 to 512 MHz; Th = 25 °C; Rth mb-h = 0,2 K/W; class-B operation Fig.11 Power gain versus frequency. August 1986 8 Philips Semiconductors Product specification UHF power transistor BLU45/12 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 6 leads SOT119A A F q C U1 B H1 w2 M C b2 2 H c 4 6 p U2 D1 U3 D w1 M A B A 1 3 5 b1 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b b1 b2 mm 7.39 6.32 5.59 5.33 5.34 5.08 4.07 3.81 inches c D w2 w3 4.58 25.23 6.48 12.76 18.42 0.51 3.98 23.95 6.07 12.06 1.02 0.26 0.291 0.220 0.210 0.160 0.007 0.505 0.505 0.100 0.870 0.730 0.130 0.180 0.993 0.255 0.502 0.725 0.02 0.255 0.249 0.210 0.200 0.150 0.003 0.496 0.495 0.090 0.830 0.720 0.117 0.157 0.943 0.239 0.475 0.04 0.01 OUTLINE VERSION e D1 0.18 12.86 12.83 6.48 0.07 12.59 12.57 F H JEDEC EIAJ SOT119A August 1986 p 2.54 22.10 18.55 3.31 2.28 21.08 18.28 2.97 REFERENCES IEC H1 Q q U1 U2 U3 EUROPEAN PROJECTION w1 ISSUE DATE 97-06-28 9 Philips Semiconductors Product specification UHF power transistor BLU45/12 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1986 10