CHENMKO CHT5551ZPT

CHENMKO ENTERPRISE CO.,LTD
CHT5551ZPT
SURFACE MOUNT
NPN SILICON Transistor
VOLTAGE 160 Volts
CURRENT 0.6 Ampere
APPLICATION
* Telephony and proferssional communction equipment.
* Other switching applications.
SC-73/SOT-223
FEATURE
* Small flat package. ( SC-73/SOT-223 )
* Suitable for high packing density.
1.65+0.15
6.50+0.20
0.90+0.05
3.00+0.10
2.0+0.3
MARKING
0.70+0.10
0.70+0.10
2.30+0.1
ZFN
0.9+0.2
2.0+0.3
3.5+0.2
*NPN SILICON Transistor
7.0+0.3
CONSTRUCTION
0.27+0.05
0.01~0.10
0.70+0.10
4.60+0.1
1
1 Base
CIRCUIT
3
2
2 Emitter
3
3 Collector ( Heat Sink )
1
2
SC-73/SOT-223
Dimensions in millimeters
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
collector-emitter voltage
open base
−
180
160
V
VCEO
VEBO
emitter-base voltage
open collector
−
6.0
V
IC
collector current (DC)
−
600
mA
Ptot
total power dissipation
−
2.0
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Tamb ≤ 25 °C; note 1
V
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004-7
RATING CHARACTERISTIC CURVES ( CHT5551ZPT )
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
note 1
VALUE
UNIT
357
K/W
Note
1.Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
VCB = 120 V
−
50
ICBO
collector cut-off current
VCB = 120 V,TA=100OC
−
50
nA
uA
IEBO
emitter cut-off current
VEB=4.0V
−
50
nA
hFE
DC current gain
IC = 1.0 mA; V CE = 5V
IC = 10mA; VCE = 5V
IC = 50 mA; VCE =5V
VCEsat
VBEsat
Cob
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
hfe
80
−
80
30
250
−
IC = 10 mA; IB = 1.0 m A
−
0.15
V
IC =-50 mA; IB = 5.0 m A
−
−
0.2
1.0
V
V
IC =10mA; IB =1.0mA
−
1.0
V
−
6.0
pF
VCE=10V,IC=1.0mA,f=1.0KHz
50
200
100
IC =-50 mA; IB = 5.0 m A
IE = ie = 0; VCB = 1 0 V; f = 1 MHz
fT
transition frequency
IC = 10 mA; VCE = 1 0 V;
f = 1.0 MHz
F
noise Þgure
IC = 200 mA; VCE = 5 V; RS = 1 0 Ω;
−
f =10Hz to 15.7KHz
300
MHz
8.0
dB