PROCESS CPD41 Switching Diode High Current Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19.7 x 19.7 MILS Die Thickness 8.0 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 30,394 PRINCIPAL DEVICE TYPES 1N3600 1N4150 CMPD4150 R4 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS CPD41 Typical Electrical Characteristics R4 (22-March 2010) w w w. c e n t r a l s e m i . c o m