DSEP 29-06A DSEP 29-06AS DSEP 29-06B HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 600 V trr = 30/35 ns with soft recovery VRSM VRRM V V 600 600 600 600 600 600 Type C A TO-220 AC C A DSEP 29-06A DSEP 29-06AS DSEP 29-06B C (TAB) TO-263 C (TAB) A A A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM Conditions Maximum Ratings rect., d = 0.5; TC (Version A, AS) = 135°C TC (Version B) = 125°C IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine; (Version A, AS) (Version B) 35 30 30 A A A 250 200 A A EAS TVJ = 25°C; non-repetitive IAS = 1.3 A; L = 180 µH 0.2 mJ IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.1 A -55...+175 175 -55...+150 °C °C °C 165 W 0.4...0.6 Nm TVJ TVJM Tstg Ptot TC = 25°C Md mounting torque (Version A, B) Weight typical Symbol Conditions ① 2 g Characteristic max. Values Version A Version B TVJ = 25°C; VR = VRRM TVJ = 150°C; VR = VRRM 250 1 250 2 µA mA VF ② IF = 30 A; 1.26 1.61 1.58 2.52 V V RthJC RthCH typ. 0.9 0.5 0.9 0.5 K/W K/W 35 30 ns 6 4 A IR trr IRM typ. typ. TVJ = 150°C TVJ = 25°C IF = 1 A; -di/dt = 200 A/µs; VR = 30 V; TVJ = 25°C VR = 100 V; IF = 50 A; -diF/dt = 100 A/µs; TVJ = 100°C Features International standard package • Planar passivated chips • Very short recovery time l Extremely low switching losses • Low IRM-values • Soft recovery behaviour • Epoxy meets UL 94V-0 Applications • Antiparallel diode for high frequency switching devices • Antisaturation diode • Snubber diode • Free wheeling diode in converters and motor control circuits • Rectifiers in switch mode power supplies (SMPS) • Inductive heating • Uninterruptible power supplies (UPS) • Ultrasonic cleaners and welders Advantages • Avalanche voltage rated for reliable operation • Soft reverse recovery for low EMI/RFI • Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see Outlines.pdf Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 % ② Pulse Width = 300 µs, Duty Cycle < 2.0 % IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 417 Data according to IEC 60747 and per diode unless otherwise specified. 1-3 DSEP 29-06A DSEP 29-06AS 70 A 60 3000 50 T = 100°C nC VVJ = 300V R 2500 IRM Qr IF 50 TVJ= 100°C VR = 300V A 40 2000 TVJ=150°C IF= 60A IF= 30A IF= 15A 30 40 TVJ=100°C IF= 60A IF= 30A IF= 15A 1500 30 20 1000 20 10 500 10 TVJ=25°C 0 0.0 0.5 1.0 1.5 VF 0 100 V2.0 Fig. 1 Forward current IF versus VF 0 A/µs 1000 -diF/dt Fig. 2 Reverse recovery charge Qr versus -diF/dt 2.0 130 TVJ= 100°C VR = 300V ns 120 trr 1.5 Kf 200 400 20 1.2 V VFR 15 µs tfr 0.9 VFR tfr 100 600 A/µs 800 1000 -diF/dt Fig. 3 Peak reverse current IRM versus -diF/dt IF= 60A IF= 30A IF= 15A 110 1.0 0 10 0.6 5 0.3 IRM 90 0.5 Qr 80 0.0 TVJ= 100°C IF = 30A 70 0 40 80 120 °C 160 0 0 TVJ 200 400 600 800 1000 A/µs 0 200 400 -diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ Fig. 5 Recovery time trr versus -diF/dt 1 0.0 600 A/µs 800 1000 diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: K/W i 1 2 3 0.1 ZthJC Rthi (K/W) ti (s) 0.502 0.193 0.205 0.0052 0.0003 0.0162 0.01 0.001 0.00001 DSEP 29-06A 0.0001 0.001 0.01 s 0.1 NOTE: Fig. 2 to Fig. 6 shows typical values 1 t IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 417 Fig. 7 Transient thermal resistance junction to case 2-3 DSEP 29-06B 100 350 nC 300 A 80 TVJ = 150°C IF IF = 30 A 8 IRM IF = 15 A IF = 60 A Qr 6 IF = 30 A 200 TVJ = 100°C IF = 60 A A VR = 300 V 250 60 10 TVJ = 100°C IF = 15 A 150 40 4 TVJ = 100°C 100 20 TVJ = 25°C 50 0 0 1 2 3 V VR = 300 V 2 0 100 4 0 A/µs 1000 -diF/dt VF Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 140 2.0 120 Kf IF = 60 A IF = 30 A IF = 15 A 80 µs 0.25 tfr 40 0.20 30 0.15 20 IRM 0.5 0.30 VFR 100 1.0 600 A/µs 800 1000 -diF/dt IF = 30 A 50 trr 1.5 400 TVJ = 100°C V VR = 300 V 200 Fig. 3 Peak reverse current IRM versus -diF/dt 60 TVJ = 100°C ns 0 60 tfr VFR 10 0.05 40 Qr 0.0 0 0 40 0.10 80 120 C 160 0 TVJ 200 400 600 800 1000 A/µs 0 200 400 -diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ Fig. 5 Recovery time trr versus -diF/dt 0.00 600 A/µs 800 1000 diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt 1 Constants for ZthJC calculation: K/W i 1 2 3 0.1 ZthJC Rthi (K/W) ti (s) 0.502 0.193 0.205 0.0052 0.0003 0.0162 0.01 0.001 0.00001 DSEP 30-06B NOTE: Fig. 2 to Fig. 6 shows typical values 0.0001 0.001 0.01 s 0.1 1 t IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 417 Fig. 7 Transient thermal resistance junction to case 3-3