RoHS 16PT Series RoHS SEMICONDUCTOR Stansard SCRs, 16A Main Features 2 2 Symbol Value Unit I T(RMS) 16 A 1 1 V DRM /V RRM 600 to 1000 V I GT 25 mA 2 2 3 3 TO-251 (I-PAK) (16PTxxF) TO-252 (D-PAK) (16PTxxG) 2 DESCRIPTION The 16PT series of silicon controlled rectifiers are high performance glass passivated technology, and are suitable for general purpose applications. 1 2 1 3 TO-220AB (Non-lnsulated) Using clip assembly technology, they provide a superior performance in surge current capabilities. (16PTxxA) 2 3 TO-220AB (lnsulated) (16PTxxAI) A2 2 (A2) A1 A2 G TO-263 (D2PAK) (G)3 1(A1) (16PTxxH) ABSOLUTE MAXIMUM RATINGS PARAMETER RMS on-state current full sine wave (180° conduction angle ) Average on-state current (180° conduction angle) Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) I2t Value for fusing TEST CONDITIONS SYMBOL IT(RMS) IT(AV) ITSM VALUE UNIT 16 A 10 A TO-251/TO-252 TO-220AB/TO-263 T c =110°C TO-220AB insulated T c =86°C TO-251/TO-252 TO-220AB/TO-263 T c =110°C TO-220AB insulated T c =86°C F =50 Hz t = 20 ms 190 F =60 Hz t = 16.7 ms 200 t p = 10 ms I2t A 180 A2s Critical rate of rise of on-state current IG = 2xlGT, tr≤100ns dI/dt F = 60 Hz T j = 125ºC 50 A/µs Peak gate current IGM T p = 20 µs T j = 125ºC 4 A Maximum gate power PGM T p =20µs T j = 125ºC Average gate power dissipation PG(AV) Repetitive peak off-state voltage VDRM Repetitive peak reverse voltage VRRM Storage temperature range 10 W T j =125ºC 1 W T j =125ºC 600 to 1000 V Tstg - 40 to + 150 Tj - 40 to + 125 ºC Operating junction temperature range www.nellsemi.com Page 1 of 6 RoHS 16PT Series RoHS SEMICONDUCTOR ELECTRICAL SPECIFICATIONS SYMBOL (TJ = 25 ºC unless otherwise specified) 16PTxxxx TEST CONDITIONS Min. 2 Max. 15 Max. 1.3 Min. 0.2 V IGT V D = 12V, R L = 33Ω VGT V D = V DRM , R L = 3.3KΩ VGD T j = 125°C R GK = 220Ω Unit mA V IH I T = 500mA, Gate open Max. 40 mA IL I G = 1.2×I GT Min. 60 mA V D = 67% V DRM , Gate open T j = 125°C Min. 500 V/µs VTM I T = 32A, t P = 380µs T j = 25°C Max. 1.6 V IDRM IRRM V D =V DRM , V R =V RRM T j = 25°C Max. 5 µA R GK = 220Ω T j = 125°C Max. 2 mA Vto Threshold Voltage T j = 125°C Max. 0.77 V Rd Dynamic Resistance T j = 125°C Max. 23 mΩ dV/dt THERMAL RESISTANCE VALUE UNIT IPAK/DPAK/TO-220AB/TO-263 1.1 °C/W S = 1 cm 2 TO-263(D 2 PAK) 45 S = 0.5 cm 2 TO-252(D-PAK) 70 TO-220AB 60 Parameter SYMBOL Rth(j-c) Junction to case (DC) Rth(j-a) Junction to ambient °C/W 100 TO-251(I-PAK) S=Copper surface under tab PRODUCT SELECTOR VOLTAGE (x x) PART NUMBER SENSITIVITY PACKAGE V 25 mA TO-220AB V V 25 mA I-PAK V V V 25 mA D-PAK V V V 25 mA D 2 PAK 600 V 800 V 1000 V 16PTxxA/16PTxxAl V V 16PTxxF V 16PTxxG 16PTxxH ORDERING INFORMATION MARKING PACKAGE WEIGHT BASE Q,TY DELIVERY MODE 16PTxxA 16PTxxA TO-220AB 2.0g 50 Tube 16PTxxAI 16PTxxAI TO-220AB (insulated) 2.3g 50 Tube 16PTxxF 16PTxxF TO-251(I-PAK) 0.40g 80 Tube 16PTxxG 16PTxxG TO-252(D-PAK) 0.38g 80 Tube 16PTxxH 16PTxxH TO-263(D 2 PAK) 2.0g 50 Tube ORDERING TYPE Note: xx = voltage www.nellsemi.com Page 2 of 6 RoHS 16PT Series RoHS SEMICONDUCTOR ORDERING INFORMATION SCHEME 16 PT 06 Current 16 = 16A, IT(RMS) SCR series Voltage Code 06 = 600V 08 = 800V 10 = 1000V Package type A = TO-220AB (non-insulated) AI = TO-220AB ( insulated) F = TO-251 (I-PAK) G = TO-252 (D-PAK) H = TO-263 (D 2 PAK) Fig.1 Maximum average power dissipation versus average on-state current. Fig.2 Average and D.C. on-state current versus case temperature. P (W) lT(AV)(A) 18 16 α=180° 14 14 12 α=180° 10 8 6 8 TO-220AB 6 insulated 360° 4 4 2 I T(AV) (A) 0 6 4 2 2 α 8 10 0 12 Fig.3 Average and D.C. on-state current versus ambient temperature. (copper surface under tab: S=1cm 2 ) (D 2 PAK) 4.0 TO-251/TO-252 TO-263/TO-220AB 12 10 0 D.C. 16 T case (°C) 0 25 75 50 100 125 Fig.4 Relative variation of thermal impedance versus pulse duration. lT(AV)(A) K=[Zth/Rth] 1.00 Zth(j-c) 3.5 D.C. 3.0 2.5 0.10 α=180° 2.0 Zth(j-a) 1.5 1.0 0.5 T amb (°C) t P (s) 0.0 0 25 www.nellsemi.com 50 75 100 125 0.01 1E-3 Page 3 of 6 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 RoHS 16PT Series RoHS SEMICONDUCTOR Fig.5 Relative variation of gate trigger current, holding current and latching current and latching current versus junction temperature. Fig.6 Surge peak on-state current versus number of cycles. l GT , l H , l L [T j ] / l GT ,l H ,l L [T j =25°C] ITSM (A) 2.5 200 180 2.0 tp=20ms 160 l GT 140 1.5 120 100 IH & IL 1.0 One cycle Non repetitive T j initial = 25°C Repetitive T case = 110 °C 80 60 0.5 40 T J (°C) 20 0.0 Number of cycles 0 -40 -20 0 20 40 60 80 100 120 140 10 1 100 1000 Fig.8 On-state characteristics (maximum values) Fig.7 Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding values of l 2 t 2000 200 T j initial = 25°C 1000 T j max.: V to = 0.77V R d = 23mΩ 100 l TSM T j max dl/dt limitattion l 2t 100 10 T j = 25°C 10 0.01 t p (ms) 0.10 V TM (V) 1 1.00 0.0 10.00 0.5 1.0 1.5 2.0 Fig.9 Thermal resistance junction to ambient versus copper surface under tab (epoxy printed circuit board Fr4, copper thickness:35 µm)(D 2 PAK) Rth(j-a)(°C/W) 80 70 60 50 40 30 20 10 0 www.nellsemi.com S(cm 2 ) 0 4 8 12 16 20 24 Page 4 of 6 28 32 36 40 2.5 3.0 3.5 4.0 4.5 RoHS 16PT Series RoHS SEMICONDUCTOR Case Style TO-251 (I-PAK) 6.6(0.26) 2.4(0.095) 2.2(0.086) 6.4(0.52) 1.5(0.059) 5.4(0.212) 1.37(0.054) 5.2(0.204) 0.62(0.024) 0.48(0.019) 6.2(0.244) 4T 6(0.236) 16.3(0.641) 15.9(0.626) 1.9(0.075) 1.8(0.071) 9.4(0.37) 9(0.354) 0.85(0.033) 0.76(0.03) 0.65(0.026) 0.55(0.021) 4.6(0.181) 4.4(0.173) 0.62(0.024) 0.45(0.017) TO-252 (D-PAK) 2.4(0.095) 2.2(0.086) 6.6(0.259) 6.4(0.251) 1.5(0.059) 5.4(0.212) 5.2(0.204) 1.37(0.054) RoHS 0.62(0.024) 0.48(0.019) 2 1 1.14(0.045) 0.76(0.030) 2.28(0.090) 2 3 9.35(0.368) 10.1(0.397) 0.89(0.035) 0.64(0.025) 6.2(0.244) 6(0.236) 0.62(0.024) 0.45(0.017) 2 (A2) 4.57(0.180) (G)3 1(A1) www.nellsemi.com Page 5 of 6 RoHS 16PT Series RoHS SEMICONDUCTOR Case Style TO-220AB 10.54 (0.415) MAX. 9.40 (0.370) 9.14 (0.360) 4.70 (0.185) 4.44 (0.1754) 3.91 (0.154) 3.74 (0.148) 1.39 (0.055) 1.14 (0.045) 2.87 (0.113) 2.62 (0.103) 3.68 (0.145) 3.43 (0.135) 1 PIN 2 15.32 (0.603) 14.55 (0.573) 16.13 (0.635) 15.87 (0.625) 8.89 (0.350) 8.38 (0.330) 29.16 (1.148) 28.40 (1.118) 3 4.06 (0.160) 3.56 (0.140) 2.79 (0.110) 2.54 (0.100) 1.45 (0.057) 1.14 (0.045) 2.67 (0.105) 2.41 (0.095) 2.65 (0.104) 2.45 (0.096) 14.22 (0.560) 13.46 (0.530) 0.90 (0.035) 0.70 (0.028) 0.56 (0.022) 0.36 (0.014) 5.20 (0.205) 4.95 (0.195) TO-263(D 2 PAK) 10.45 (0.411) 9.65 (0.380) 4.83 (0.190) 4.06 (0.160) 6.22 (0.245) 9.14 (0.360) 8.13 (0.320) RoHS 1.40 (0.055) 1.14 (0.045) 1.40 (0.055) 1.19 (0.047) 15.85 (0.624) 15.00 (0.591) 0 to 0.254 (0 to 0.01) 2.79 (0.110) 2.29 (0.090) 0.940 (0.037) 0.686 (0.027) 0.53 (0.021) 0.36 (0.014) 2.67 (0.105) 2.41 (0.095) 3.56 (0.140) 5.20 (0.205) 4.95 (0.195) 2.79 (0.110) 2 (A2) (G)3 1(A1) www.nellsemi.com Page 6 of 6