Single P-channel MOSFET ELM13407CA-S ■General description ■Features ELM13407CA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=-30V Id=-4.1A (Vgs=-10V) Rds(on) < 52mΩ (Vgs=-10V) Rds(on) < 87mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Ta=25°C Ta=70°C Continuous drain current Pulsed drain current Ta=25°C Ta=70°C Power dissipation Symbol Vds Vgs Limit -30 ±20 Unit V V Note Id -4.1 -3.5 A 1 Idm -20 A 2 W 1 Pd Junction and storage temperature range Tj, Tstg 1.4 1.0 -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol t≤10s Maximum junction-to-ambient Maximum junction-to-lead Steady-state Steady-state Rθja Rθjl ■Pin configuration Typ. 65 Max. 90 Unit °C/W 85 43 125 60 °C/W °C/W 1 2 1 3 ■Circuit SOT-23(TOP VIEW) 3 Note D Pin No. 1 Pin name GATE 2 3 SOURCE DRAIN G S 4- 1 Single P-channel MOSFET ELM13407CA-S ■Electrical characteristics Parameter STATIC PARAMETERS Symbol Condition Min. Drain-source breakdown voltage BVdss Id=-250μA, Vgs=0V -30 μA ±100 nA -1.8 -3.0 V A 40.5 57.0 52.0 73.0 64.0 8.2 87.0 mΩ S Is=-1A, Vgs=0V -0.77 -1.00 -2.2 V A 840 Vgs=0V, Vds=-15V, f=1MHz 700 120 pF pF Vgs=0V, Vds=0V, f=1MHz 75 10 Idss Vds=-24V Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±20V Tj=55°C Gate threshold voltage On state drain current Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-4.5V, Vds=-5V Static drain-source on-resistance Vgs=-10V Rds(on) Id=-4.1A Gfs Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Vsd Is Input capacitance Output capacitance Ciss Coss Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Crss Rg Total gate charge (10V) Total gate charge (4.5V) Gate-source charge Qg Qg Qgs V -1 -5 Zero gate voltage drain current Forward transconductance Typ. Ta=25°C Max. Unit -1.0 -10 Tj=125°C Vgs=-4.5V, Id=-3A Vds=-5V, Id=-4A 5.5 15 pF Ω Vgs=-4.5V, Vds=-15V Id=-4A 14.3 7.0 3.1 Gate-drain charge Turn-on delay time Turn-on rise time Qgd td(on) tr Vgs=-10V, Vds=-15V 3.0 8.6 5.0 nC ns ns Turn-off delay time Turn-off fall time Body diode reverse recovery time td(off) Rl=3.6Ω, Rgen=3Ω tf trr If=-4A, dl/dt=100A/μs Qrr 28.2 13.5 27 ns ns ns Body diode reverse recovery charge 15 18.0 mΩ 36 nC nC nC nC NOTE : 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 4- 2 Single P-channel MOSFET ELM13407CA-S ■Typical electrical and thermal characteristics 20 -10V 10 -5V -4.5V 10 -3.5V 5 Vgs=-3V 0 0.00 Vds=-5V 8 -4V -Id (A) -Id (A) 15 6 4 125°C 2 25°C 0 1.00 2.00 3.00 4.00 5.00 0 1 100 4 1.6 80 Normalized On-Resistance Rds(on) (m� ) 3 -Vgs (Volts) Figure 2: Transfer Characteristics -Vds (Volts) Figure 1: On-Region Characteristics Vgs=-4.5V 60 Vgs=-10V 40 20 Vgs=-4.5V 1.4 Vgs=-10V 1.2 1 Id=-2A 0.8 0 2 4 6 8 10 0 25 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 160 140 1E+00 Id=-2A 120 1E-01 100 1E-02 -Is (A) Rds(on) (m� ) 2 125°C 80 125°C 1E-03 25°C 1E-04 60 1E-05 25°C 40 1E-06 20 2 4 6 8 0.0 10 0.2 0.4 0.6 0.8 1.0 -Vsd (Volts) Figure 6: Body-Diode Characteristics -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 4- 3 1.2 Single P-channel MOSFET ELM13407CA-S 1000 10 Vds=-15V Id=-4A 800 Capacitance (pF) -Vgs (Volts) 8 6 4 2 Ciss 600 400 Coss Crss 200 0 0 4 8 12 0 16 0 -Qg (nC) Figure 7: Gate-Charge Characteristics Tj(max)=150°C Ta=25°C 0.1s 10ms 10s 0.1 DC 1 10 20 D=Ton/T Tj,pk=Ta+Pdm.Z�ja.R�ja R�ja=90°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -Vds (Volts) Z�ja Normalized Transient Thermal Resistance 30 Tj(max)=150°C Ta=25°C 0 0.001 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 25 10 1s 0.1 20 30 100�s 10�s 1ms 1 15 40 Rds(on) limited 10 10 -Vds (Volts) Figure 8: Capacitance Characteristics Power (W) -Id (Amps) 100 5 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 Pd 0.1 0.01 0.00001 Ton T Single Pulse 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4- 4 100 1000