Single N-channel MOSFET ELM16402EA-S ■General description ■Features ELM16402EA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=30V Id=6.9A (Vgs=10V) Rds(on) < 28mΩ (Vgs=10V) Rds(on) < 42mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Ta=25°C Ta=70°C Continuous drain current Pulsed drain current Ta=25°C Ta=70°C Power dissipation Symbol Vds Vgs Limit 30 ±20 Unit V V Note Id 6.9 5.8 A 1 Idm 20 A 2 Pd Junction and storage temperature range Tj, Tstg 2.00 1.44 -55 to 150 W °C ■Thermal characteristics Parameter Symbol Maximum junction-to-ambient Maximum junction-to-ambient Maximum junction-to-lead t≤10s Steady-state Steady-state Rθja Rθjl ■Pin configuration Typ. Max. Unit 48.0 74.0 35.0 62.5 110.0 40.0 °C/W °C/W °C/W 1 5 2 4 3 1 3 ■Circuit D SOT-26(TOP VIEW) 6 Note Pin No. 1 2 Pin name DRAIN DRAIN 3 4 5 GATE SOURCE DRAIN 6 DRAIN 4- 1 G S Single N-channel MOSFET ELM16402EA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Vds=24V, Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±20V Gate threshold voltage On state drain current Static drain-source on-resistance Forward transconductance Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Rds(on) Gfs Vsd Output capacitance Reverse transfer capacitance Gate resistance Coss Crss Rg SWITCHING PARAMETERS Total gate charge (10V) Qg Total gate charge (4.5V) Qg Gate-source charge Gate-drain charge Qgs Qgd Body diode reverse recovery time Body diode reverse recovery charge V 1 Tj=55°C 5 100 1.0 20 Tj=125°C Vgs=4.5V, Id=5.0A Vds=5V, Id=6.9A Is=1A 10.0 1.9 3.0 22.5 28.0 31.3 34.5 15.4 0.76 38.0 42.0 Vgs=0V, Vds=0V, f=1MHz Vgs=10V, Vds=15V, Id=6.9A td(on) tr Vgs=10V, Vds=15V td(off) Rl=2.2Ω, Rgen=3Ω tf trr Qrr If=6.9A, dl/dt=100A/μs If=6.9A, dl/dt=100A/μs nA V A mΩ 1.00 3 A 820 pF 102 77 3.0 3.6 pF pF Ω 13.84 16.70 nC 6.74 8.10 nC 680 Vgs=0V, Vds=15V, f=1MHz μA mΩ S V Is Ciss Turn-off fall time Vgs=10V, Id=6.9A Typ. 30 Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=4.5V, Vds=5V Input capacitance Turn-on delay time Turn-on rise time Turn-off delay time Min. Ta=25°C Max. Unit 1.82 3.20 nC nC 4.6 4.1 20.6 ns ns ns 5.2 ns 16.5 7.8 20.0 ns nC NOTE : 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 4- 2 Single N-channel MOSFET ELM16402EA-S ■Typical electrical and thermal characteristics 10V 25 20 6V 5V 4.5V Id (A) 20 15 3.5V 10 12 8 125°C 4 Vgs=3V 5 Vds=5V 16 4V Id(A) 30 25°C 0 0 0 1 2 3 4 0 5 0.5 2 2.5 3 3.5 4 4.5 1.6 Normalized On-Resistance 60 50 Rds(on) (m� ) 1.5 Vgs (Volts) Figure 2: Transfer Characteristics Vds (Volts) Fig 1: On-Region Characteristics Vgs=4.5V 40 30 20 Vgs=10V 1.5 Vgs=10V Id=5A 1.4 Vgs=4.5V 1.3 1.2 1.1 1 0.9 0.8 10 0 5 10 15 0 20 50 100 150 200 Temperature ( °C) Figure 4: On-Resistance vs. Junction Temperature Id (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 70 1.0E+01 60 1.0E+00 Id=5A 50 Is Amps Rds(on) (m� ) 1 125°C 40 1.0E-01 1.0E-02 125°C 1.0E-03 30 25°C 20 25°C 1.0E-04 1.0E-05 10 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 4- 3 0.0 0.2 0.4 0.6 0.8 Vsd (Volts) Figure 6: Body diode characteristics 1.0 Single N-channel MOSFET ELM16402EA-S 10 f=1MHz Vgs=0V 900 800 Capacitance (pF) 8 Vgs (Volts) 1000 Vds=15V Id=6.9A 6 4 2 700 Ciss 600 500 400 300 200 Coss 100 0 0 2 4 6 8 10 12 Crss 0 14 0 Qg (nC) Figure 7: Gate-Charge characteristics 100 100�s 0.1s 1s DC 1 0.1 10 100 Vds (Volts) Z� ja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.Z�ja.R�ja R�ja=62.5°C/W 30 20 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 25 10 10s 0.1 20 Tj(max)=150°C Ta=25°C 30 10�s 10ms 1 15 40 Power W Id (Amps) 1ms 10 10 Vds (Volts) Figure 8: Capacitance Characteristics Tj(max)=150°C Ta=25°C Rds(on) limited 5 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 Pd 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 T 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4- 4 100 1000