ELM-TECH ELM16402EA-S

Single N-channel MOSFET
ELM16402EA-S
■General description
■Features
ELM16402EA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=30V
Id=6.9A (Vgs=10V)
Rds(on) < 28mΩ (Vgs=10V)
Rds(on) < 42mΩ (Vgs=4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Ta=25°C
Ta=70°C
Continuous drain current
Pulsed drain current
Ta=25°C
Ta=70°C
Power dissipation
Symbol
Vds
Vgs
Limit
30
±20
Unit
V
V
Note
Id
6.9
5.8
A
1
Idm
20
A
2
Pd
Junction and storage temperature range
Tj, Tstg
2.00
1.44
-55 to 150
W
°C
■Thermal characteristics
Parameter
Symbol
Maximum junction-to-ambient
Maximum junction-to-ambient
Maximum junction-to-lead
t≤10s
Steady-state
Steady-state
Rθja
Rθjl
■Pin configuration
Typ.
Max.
Unit
48.0
74.0
35.0
62.5
110.0
40.0
°C/W
°C/W
°C/W
1
5
2
4
3
1
3
■Circuit
D
SOT-26(TOP VIEW)
6
Note
Pin No.
1
2
Pin name
DRAIN
DRAIN
3
4
5
GATE
SOURCE
DRAIN
6
DRAIN
4- 1
G
S
Single N-channel MOSFET
ELM16402EA-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Vds=24V, Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±20V
Gate threshold voltage
On state drain current
Static drain-source on-resistance
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Rds(on)
Gfs
Vsd
Output capacitance
Reverse transfer capacitance
Gate resistance
Coss
Crss
Rg
SWITCHING PARAMETERS
Total gate charge (10V)
Qg
Total gate charge (4.5V)
Qg
Gate-source charge
Gate-drain charge
Qgs
Qgd
Body diode reverse recovery time
Body diode reverse recovery charge
V
1
Tj=55°C
5
100
1.0
20
Tj=125°C
Vgs=4.5V, Id=5.0A
Vds=5V, Id=6.9A
Is=1A
10.0
1.9
3.0
22.5
28.0
31.3
34.5
15.4
0.76
38.0
42.0
Vgs=0V, Vds=0V, f=1MHz
Vgs=10V, Vds=15V, Id=6.9A
td(on)
tr
Vgs=10V, Vds=15V
td(off) Rl=2.2Ω, Rgen=3Ω
tf
trr
Qrr
If=6.9A, dl/dt=100A/μs
If=6.9A, dl/dt=100A/μs
nA
V
A
mΩ
1.00
3
A
820
pF
102
77
3.0
3.6
pF
pF
Ω
13.84
16.70
nC
6.74
8.10
nC
680
Vgs=0V, Vds=15V, f=1MHz
μA
mΩ
S
V
Is
Ciss
Turn-off fall time
Vgs=10V, Id=6.9A
Typ.
30
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=4.5V, Vds=5V
Input capacitance
Turn-on delay time
Turn-on rise time
Turn-off delay time
Min.
Ta=25°C
Max. Unit
1.82
3.20
nC
nC
4.6
4.1
20.6
ns
ns
ns
5.2
ns
16.5
7.8
20.0
ns
nC
NOTE :
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
4- 2
Single N-channel MOSFET
ELM16402EA-S
■Typical electrical and thermal characteristics
10V
25
20
6V
5V
4.5V
Id (A)
20
15
3.5V
10
12
8
125°C
4
Vgs=3V
5
Vds=5V
16
4V
Id(A)
30
25°C
0
0
0
1
2
3
4
0
5
0.5
2
2.5
3
3.5
4
4.5
1.6
Normalized On-Resistance
60
50
Rds(on) (m� )
1.5
Vgs (Volts)
Figure 2: Transfer Characteristics
Vds (Volts)
Fig 1: On-Region Characteristics
Vgs=4.5V
40
30
20
Vgs=10V
1.5
Vgs=10V
Id=5A
1.4
Vgs=4.5V
1.3
1.2
1.1
1
0.9
0.8
10
0
5
10
15
0
20
50
100
150
200
Temperature ( °C)
Figure 4: On-Resistance vs. Junction
Temperature
Id (Amps)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
70
1.0E+01
60
1.0E+00
Id=5A
50
Is Amps
Rds(on) (m� )
1
125°C
40
1.0E-01
1.0E-02
125°C
1.0E-03
30
25°C
20
25°C
1.0E-04
1.0E-05
10
2
4
6
8
10
Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
4- 3
0.0
0.2
0.4
0.6
0.8
Vsd (Volts)
Figure 6: Body diode characteristics
1.0
Single N-channel MOSFET
ELM16402EA-S
10
f=1MHz
Vgs=0V
900
800
Capacitance (pF)
8
Vgs (Volts)
1000
Vds=15V
Id=6.9A
6
4
2
700
Ciss
600
500
400
300
200
Coss
100
0
0
2
4
6
8
10
12
Crss
0
14
0
Qg (nC)
Figure 7: Gate-Charge characteristics
100
100�s
0.1s
1s
DC
1
0.1
10
100
Vds (Volts)
Z� ja Normalized Transient
Thermal Resistance
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=62.5°C/W
30
20
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
25
10
10s
0.1
20
Tj(max)=150°C
Ta=25°C
30
10�s
10ms
1
15
40
Power W
Id (Amps)
1ms
10
10
Vds (Volts)
Figure 8: Capacitance Characteristics
Tj(max)=150°C
Ta=25°C
Rds(on)
limited
5
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
Pd
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
T
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4- 4
100
1000