FDD8426H Dual N & P-Channel PowerTrench® MOSFET N-Channel: 40 V, 12 A, 12 mΩ P-Channel: -40 V, -10 A, 17 mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement mode Power Max rDS(on) = 12 mΩ at VGS = 10 V, ID = 12 A MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially Max rDS(on) = 15 mΩ at VGS = 4.5 V, ID = 11 A tailored to minimize on-state resistance and yet maintain Q2: P-Channel superior switching performance. Max rDS(on) = 17 mΩ at VGS = -10 V, ID = -10 A Applications Max rDS(on) = 27 mΩ at VGS = -4.5 V, ID = -8.3 A Inverter 100% UIL Tested H-Bridge RoHS Compliant D1 D2 D1/D2 G1 G2 G2 S2 G1 S1 S1 N-Channel Dual DPAK 4L S2 P-Channel MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter Q1 40 Q2 -40 Units V VGS Gate to Source Voltage ±20 ±20 V Drain Current - Continuous (Package Limited) 17 -17 ID - Continuous (Silicon Limited) TC = 25°C 56 -48 - Continuous TA = 25°C 12 -10 40 -40 - Pulsed Power Dissipation for Single Operation TC = 25°C PD EAS Single Pulse Avalanche Energy TJ, TSTG Operating and Storage Junction Temperature Range (Note 1) 56 65 TA = 25°C (Note 1a) 3.1 TA = 25°C (Note 1b) 1.3 (Note 3) A 112 W 162 -55 to +150 mJ °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case, Single Operation for Q1 (Note 1) 1.4 RθJC Thermal Resistance, Junction to Case, Single Operation for Q2 (Note 1) 1.4 °C/W Package Marking and Ordering Information Device Marking FDD8426H Device FDD8426H ©2009 Fairchild Semiconductor Corporation FDD8426H Rev.C Package TO-252-4L 1 Reel Size 13” Tape Width 12mm Quantity 2500units www.fairchildsemi.com FDD8426H Dual N & P-Channel PowerTrench® MOSFET September 2009 Symbol Parameter Test Conditions Type Min 40 -40 Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V ID = -250 µA, VGS = 0 V Q1 Q2 ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, referenced to 25 °C ID = -250 µA, referenced to 25 °C Q1 Q2 IDSS Zero Gate Voltage Drain Current VDS = 32 V, VGS = 0 V VDS = -32 V, VGS = 0 V Q1 Q2 1 -1 µA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V Q1 Q2 ±100 ±100 nA nA 3.0 -3.0 V V 35 -32 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA VGS = VDS, ID = -250 µA Q1 Q2 ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 µA, referenced to 25 °C ID = -250 µA, referenced to 25 °C Q1 Q2 -6 6 VGS = 10 V, ID = 12 A VGS = 4.5 V, ID = 11 A VGS = 10 V, ID = 12 A, TJ = 125 °C Q1 9.3 11 14 12 15 22 VGS = -10 V, ID = -10 A VGS = -4.5 V , ID = -8.3 A VGS = -10 V, ID = -10 A, TJ = 125 °C Q2 13 19 19 17 27 30 VDD = 5 V, ID = 12 A VDD = -5 V, ID = -10 A Q1 Q2 53 31 Q1 VDS = 20 V, VGS = 0 V, f = 1MHZ Q1 Q2 2055 1900 2735 2650 pF Q1 Q2 255 330 335 440 pF Q1 Q2 165 200 245 300 pF Q1 Q2 1.1 3.3 Q1 Q2 9.7 9.7 20 20 ns Q1 Q2 4.9 6.9 10 14 ns Q2 VDD = -20 V, ID = -10 A, VGS = -10 V, RGEN = 6 Ω Q1 Q2 27 32 43 51 ns Q1 Q2 3.7 7.5 10 15 ns VGS = 0 V to 10 V Q1 VGS = 0 V to -10 V V = 20 V, DD VGS = 0 V to 5 V ID = 12 A VGS = 0 V to -5 V Q2 VDD = -20 V, ID = -10 A Q1 Q2 38 37 53 52 nC Q1 Q2 20 20 28 28 nC Q1 Q2 6.3 6.6 nC Q1 Q2 7.1 8 nC rDS(on) gFS Static Drain to Source On Resistance Forward Transconductance 1.5 -1.5 2 2 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Q2 VDS = -20 V, VGS = 0 V, f = 1MHZ Ω Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge Qg(TOT) Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge ©2009 Fairchild Semiconductor Corporation FDD8426H Rev.C Q1 VDD = 20 V, ID = 12 A, VGS = 10 V, RGEN = 6 Ω 2 www.fairchildsemi.com FDD8426H Dual N & P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Q1 Q2 0.8 -0.8 1.2 -1.2 V Q1 Q2 22 25 35 40 ns Q1 Q2 11 14 20 22 nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 12 A VGS = 0 V, IS = -10 A Q1 IF = 12 A, di/dt = 100 A/µs Q2 IF = -10 A, di/dt = 100 A/µs (Note 2) (Note 2) Notes: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. Q1 a. 40 °C/W when mounted on a 1 in2 pad of 2 oz copper Q2 a. 40 °C/W when mounted on a 1 in2 pad of 2 oz copper b. 96 °C/W when mounted on a minimum pad of 2 oz copper b. 96 °C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3. Starting TJ = 25 °C, N-ch: L = 1 mH, IAS = 15 A, VDD =36 V, VGS = 10 V; P-ch: L = 1 mH, IAS = -18 A, VDD = -36 V, VGS = -10 V. ©2009 Fairchild Semiconductor Corporation FDD8426H Rev.C 3 www.fairchildsemi.com FDD8426H Dual N & P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 40 2.5 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V ID, DRAIN CURRENT (A) VGS = 6 V 30 VGS = 4.5 V 20 VGS = 4 V VGS = 3.5 V 10 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 0 0.0 0.5 1.0 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 2.0 1.5 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VGS = 10 V 0.5 2.0 0 10 20 30 40 ID, DRAIN CURRENT (A) Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.8 300 ID = 12 A VGS = 10 V rDS(on), DRAIN TO 1.5 1.2 0.9 0.6 -75 -50 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 6 V VGS = 4.5 V VGS = 4 V 1.0 Figure 1. On Region Characteristics PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX ID = 12 A 200 TJ = 125 oC 100 TJ = 25 oC 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 40 IS, REVERSE DRAIN CURRENT (A) 40 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) VGS = 3.5 V 30 VDS = 5 V TJ = 150 oC 20 TJ = 25 oC 10 TJ = -55 oC 0 1 2 3 TJ = 150 oC 1 0.1 TJ = 25 oC 0.01 TJ = -55 oC 0.001 0.2 4 VGS, GATE TO SOURCE VOLTAGE (V) 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics ©2009 Fairchild Semiconductor Corporation FDD8426H Rev.C VGS = 0 V 10 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 4 www.fairchildsemi.com FDD8426H Dual N & P-Channel PowerTrench® MOSFET Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted 5000 ID = 12 A VDD = 10 V Ciss 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 20 V 6 VDD = 30 V 4 1000 Coss 2 f = 1 MHz VGS = 0 V 0 0 10 20 30 40 Figure 7. Gate Charge Characteristics 40 80 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 10 Figure 8. Capacitance vs Drain to Source Voltage 20 10 TJ = 25 TJ oC = 125 oC 60 VGS = 10 V 40 VGS = 4.5 V 20 TJ = 150 oC 1 0.01 0.1 1 o RθJC = 1.4 C/W 10 0 25 100 50 75 100 125 150 o TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature 1000 P(PK), PEAK TRANSIENT POWER (W) 100 ID, DRAIN CURRENT (A) 1 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 100 us 10 THIS AREA IS LIMITED BY rDS(on) 1 Crss 100 0.1 1 ms 10 ms SINGLE PULSE TJ = MAX RATED 100 ms RθJC = 1.4 oC/W 1s TC = 25 oC 0.1 0.1 1 10 100 200 TC = 25 oC 100 50 -4 10 -3 10 -2 -1 10 10 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2009 Fairchild Semiconductor Corporation FDD8426H Rev.C SINGLE PULSE RθJC = 1.4 oC/W Figure 12. Single Pulse Maximum Power Dissipation 5 www.fairchildsemi.com FDD8426H Dual N & P-Channel PowerTrench® MOSFET Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJC DUTY CYCLE-DESCENDING ORDER 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJc + TC SINGLE PULSE o RθJC = 1.4 C/W 0.001 -4 10 -3 -2 10 -1 10 10 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Case Transient Thermal Response Curve NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 0.1 0.01 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 P DM t1 0.001 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 96 C/W (Note 1b) 0.0001 -4 10 -3 10 -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (sec) Figure 14. Junction-to-Ambient Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation FDD8426H Rev.C 6 www.fairchildsemi.com FDD8426H Dual N & P-Channel PowerTrench® MOSFET Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted 3.0 40 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) VGS = -10 V 30 VGS = -6 V VGS = -4.5 V 20 VGS = -4 V 10 VGS = -3.5 V PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 0 0 1 2 3 -VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = -4.5 V 1.5 VGS = -6 V 1.0 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VGS = -10 V 0.5 0 10 20 -ID, DRAIN CURRENT (A) 30 40 Figure 16. Normalized on-Resistance vs Drain Current and Gate Voltage 1.8 80 ID = -10 A VGS = -10 V rDS(on), DRAIN TO 1.5 1.2 0.9 0.6 -75 -50 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = -4 V 2.0 4 Figure 15. On- Region Characteristics PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 60 ID = -10 A 40 TJ = 125 oC 20 TJ = 25 oC 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 2 4 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 18. On-Resistance vs Gate to Source Voltage Figure 17. Normalized On-Resistance vs Junction Temperature 40 -IS, REVERSE DRAIN CURRENT (A) 40 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX -ID, DRAIN CURRENT (A) VGS = -3.5 V 2.5 30 VDS = -5 V 20 TJ = 150 oC 10 TJ = 25 oC TJ = -55 oC 0 1.5 2.0 2.5 3.0 3.5 4.0 TJ = 150 oC TJ = 25 oC 1 TJ = -55 oC 0.1 0.01 0.2 4.5 -VGS, GATE TO SOURCE VOLTAGE (V) 0.4 0.6 0.8 1.0 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 19. Transfer Characteristics ©2009 Fairchild Semiconductor Corporation FDD8426H Rev.C VGS = 0 V 10 Figure 20. Source to Drain Diode Forward Voltage vs Source Current 7 www.fairchildsemi.com FDD8426H Dual N & P-Channel PowerTrench® MOSFET Typical Characteristics (Q2 P-Channel) TJ = 25 °C unless otherwise noted 5000 ID = -10 A Ciss 8 VDD = -10 V CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE (V) 10 6 VDD = -20 V 4 VDD = -30 V 1000 Coss 2 f = 1 MHz VGS = 0 V 0 0 10 20 30 100 0.1 40 -ID, DRAIN CURRENT (A) -IAS, AVALANCHE CURRENT (A) 40 60 20 10 TJ = 25 oC TJ = 125 oC VGS = -10 V 40 VGS = -4.5 V 20 o RθJC = 1.4 C/W TJ = 150 oC 1 0.01 0.1 1 10 100 0 25 500 50 75 100 125 150 o TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) Figure 24. Maximum Continuous Drain Current vs Case Temperature Figure 23. Unclamped Inductive Switching Capability 1000 P(PK), PEAK TRANSIENT POWER (W) 100 -ID, DRAIN CURRENT (A) 10 Figure 22. Capacitance vs Drain to Source Voltage Figure 21. Gate Charge Characteristics 100 us 10 1 ms THIS AREA IS LIMITED BY rds(on) 10 ms SINGLE PULSE TJ = MAX RATED 100 ms RθJC = 1.4 oC/W 1s TC = 25 oC 0.1 0.1 1 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 1 Crss 1 10 100 200 o RθJC = 1.4 C/W 100 50 -4 10 -3 10 -2 10 -1 10 t, PULSE WIDTH (sec) -VDS, DRAIN to SOURCE VOLTAGE (V) Figure 25. Forward Bias Safe Operating Area ©2009 Fairchild Semiconductor Corporation FDD8426H Rev.C SINGLE PULSE Figure 26. Single Pulse Maximum Power Dissipation 8 www.fairchildsemi.com FDD8426H Dual N & P-Channel PowerTrench® MOSFET Typical Characteristics (Q2 P-Channel) TJ = 25°C unless otherwise noted FDD8426H Dual N & P-Channel PowerTrench® MOSFET Typical Characteristics (Q2 P-Channel) TJ = 25 °C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJC 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.1 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE o RθJC = 1.4 C/W 0.05 -4 10 -3 -2 10 -1 10 10 t, RECTANGULAR PULSE DURATION (sec) Figure 27. Junction-to-Case Transient Thermal Response Curve NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 0.1 0.01 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.001 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 96 C/W (Note 1b) 0.0001 -4 10 -3 10 -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (sec) Figure 28. Junction-to-Ambient Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation FDD8426H Rev.C 9 www.fairchildsemi.com FDD8426H Dual N & P-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout ©2009 Fairchild Semiconductor Corporation FDD8426H Rev.C 10 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I41 ©2009 Fairchild Semiconductor Corporation FDD8426H Rev.C 11 www.fairchildsemi.com FDD8426H Dual N & P-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. PowerTrench® AccuPower™ FPS™ The Power Franchise® PowerXS™ Auto-SPM™ F-PFS™ ® ® Programmable Active Droop™ Build it Now™ FRFET SM ® QFET Global Power Resource CorePLUS™ TinyBoost™ Green FPS™ QS™ CorePOWER™ TinyBuck™ Green FPS™ e-Series™ Quiet Series™ CROSSVOLT™ TinyCalc™ Gmax™ RapidConfigure™ CTL™ TinyLogic® GTO™ Current Transfer Logic™ ® TINYOPTO™ IntelliMAX™ EcoSPARK ™ TinyPower™ EfficentMax™ Saving our world, 1mW /W /kW at a time™ ISOPLANAR™ TinyPWM™ EZSWITCH™* SmartMax™ MegaBuck™ TinyWire™ ™* SMART START™ MICROCOUPLER™ ® TriFault Detect™ SPM MicroFET™ TRUECURRENT™* STEALTH™ MicroPak™ ® SuperFET™ MillerDrive™ ® Fairchild SuperSOT™-3 MotionMax™ Fairchild Semiconductor® SuperSOT™-6 UHC® Motion-SPM™ ® FACT Quiet Series™ Ultra FRFET™ SuperSOT™-8 OPTOLOGIC FACT® OPTOPLANAR® UniFET™ SupreMOS™ ® ® FAST VCX™ SyncFET™ FastvCore™ VisualMax™ Sync-Lock™ FETBench™ XS™ ®* PDP SPM™ ® FlashWriter * Power-SPM™