FDMC8878 N-Channel Power Trench® MOSFET 30V, 16.5A, 14mΩ Features tm General Description Max rDS(on) = 14mΩ at VGS = 10V, ID = 9.6A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management applications. Max rDS(on) = 17mΩ at VGS = 4.5V, ID = 8.7A Low Profile - 1mm max in Power 33 RoHS Compliant Application DC - DC Conversion Bottom 5 6 7 Top 8 D D 4 3 2 D D 1 S S S G D 5 4 G D 6 3 S D 7 2 S D 8 1 S Power 33 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25°C -Continuous (Silicon limited) TC = 25°C -Continuous TA = 25°C TJ, TSTG Units V ±20 V 16.5 38 (Note 1a) -Pulsed PD Ratings 30 9.6 A 60 Power Dissipation TC = 25°C Power Dissipation TA = 25°C 31 (Note 1a) Operating and Storage Junction Temperature Range 2.1 -55 to +150 W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 4 (Note 1a) 60 °C/W Package Marking and Ordering Information Device Marking FDMC8878 Device FDMC8878 ©2007 Fairchild Semiconductor Corporation FDMC8878 Rev.D Package Power 33 1 Reel Size 7” Tape Width 8mm Quantity 3000 units www.fairchildsemi.com FDMC8878 N-Channel Power Trench® MOSFET February 2007 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient 30 ID = 250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current V 20 mV/°C VDS = 24V, VGS = 0V 1 TJ = 125°C 100 VGS = ±20V, VDS = 0V µA ±100 nA 3 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C rDS(on) Drain to Source On Resistance gFS 1.7 -5.7 mV/°C VGS = 10V, ID = 9.6A 9.6 14.0 VGS = 4.5V, ID = 8.7A 12.1 17.0 VGS = 10V, ID = 9.6A , TJ = 125°C 13.5 20.0 VDS = 5V, ID = 9.6A Forward Transconductance 1 35 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15V, VGS = 0V, f = 1MHz f = 1MHz 925 1230 pF 190 255 pF 120 180 pF Ω 1.1 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 15V, ID = 9.6A VGS = 10V, RGEN = 6Ω VGS = 10V , VDD = 15V , ID = 9.6A 8 16 ns 4 10 ns 20 36 ns 3 10 ns 18 26 nC 2.8 nC 3.9 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 9.6A (Note 2) IF = 9.6A, di/dt = 100A/µs 0.8 1.2 V 23 35 ns 14 21 nC Notes: 1: RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. b. 135°C/W when mounted on a minimum pad of 2 oz copper a. 60°C/W when mounted on a 1 in2 pad of 2 oz copper 2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. FDMC8878 Rev.D 2 www.fairchildsemi.com FDMC8878 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted VGS = 10V 50 VGS = 3.5V 40 VGS = 4.5V VGS = 4V 30 VGS = 3V 20 10 0 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 0 1 2 3 VDS, DRAIN TO SOURCE VOLTAGE (V) 2.5 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 60 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 2.0 VGS = 3V 1.0 VGS = 10V 0.5 4 0 30 40 50 60 30 1.4 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) ID = 9.6A VGS = 10V 1.2 1.0 0.8 0.6 -75 -50 -25 0 25 50 75 100 125 150 ID = 9.6A Figure 3. Normalized On- Resistance vs Junction Temperature 20 TJ = 125oC 15 10 5 TJ = 25oC 3 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VDD = 5V 40 30 TJ = 25oC 20 TJ = -55oC TJ = 150oC 10 0 1 2 3 10 100 VGS = 0V 10 1 0.1 Figure 5. Transfer Characteristics TJ = 25oC TJ = 150oC TJ = -55oC 0.01 0.001 0.0 4 VGS, GATE TO SOURCE VOLTAGE (V) FDMC8878 Rev.D 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance vs Gate to Source Voltage 60 50 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 25 TJ, JUNCTION TEMPERATURE (oC) ID, DRAIN CURRENT (A) 20 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 0 10 ID, DRAIN CURRENT(A) Figure 1. On-Region Characteristics NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 3.5V 1.5 VGS = 4V VGS = 4.5V 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDMC8878 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 3000 ID = 9.6A VDD = 15V 8 Ciss CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = 10V 6 VDD = 20V 4 2 0 0 5 10 15 1000 Coss 50 0.1 20 1 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 12 ID, DRAIN CURRENT (A) 20 IAS, AVALANCHE CURRENT(A) 30 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE(nC) 10 TJ = 25oC TJ = 125oC 10 8 VGS = 10V 6 VGS = 4.5V 4 2 o RθJA = 60 C/W 1 0.01 0 80 0.1 1 10 tAV, TIME IN AVALANCHE(ms) P(PK), PEAK TRANSIENT POWER (W) 10 1ms 10ms 1 100ms 0.01 0.001 0.1 1 1s 10s DC SINGLE PULSE TJ = MAX RATED TA = 25oC 10 80 VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area FDMC8878 Rev.D 75 100 125 150 Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 100us OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 50 o 80 0.1 25 TA, AMBIENT TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability ID, DRAIN CURRENT (A) Crss f = 1MHz VGS = 0V 100 300 VGS = 10V TA = 25oC FOR TEMPERATURES 100 ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 150 – T A ----------------------125 I = I25 10 SINGLE PULSE 1 0.5 -3 10 -2 10 -1 0 1 10 10 10 t, PULSE WIDTH (s) 2 10 3 10 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMC8878 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE 0.003 -3 10 -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve FDMC8878 Rev.D 5 www.fairchildsemi.com FDMC8878 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDMC8878 N-Channel Power Trench® MOSFET www.fairchildsemi.com 6 FDMC8878 Rev.D The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT® FAST® FASTr™ FPS™ FRFET™ FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic® TINYOPTO™ TruTranslation™ UHC® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I22 FDMC8878 Rev.D 7 www.fairchildsemi.com FDMC8878 N-Channel Power Trench® MOSFET TRADEMARKS