FGP5N60UFD tm 600V, 5A Field Stop IGBT Features General Description • High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS, and PFC applications where low conduction and switching losses are essential. • Low saturation voltage: VCE(sat) =1.9V @ IC = 5A • High input impedance • Fast switching • RoHS compliant Applications • Induction Heating, UPS, SMPS, PFS C G 1 TO-220 E 1.Gate 2.Collector 3.Emitter Absolute Maximum Ratings Symbol Description VCES Collector to Emitter Voltage VGES Gate to Emitter Voltage IC ICM (1) PD Collector Current @ TC = 25oC Collector Current @ TC = 100oC Pulsed Collector Current o @ TC = 25 C o Maximum Power Dissipation @ TC = 25 C Maximum Power Dissipation o @ TC = 100 C Tstg Storage Temperature Range TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Units 600 V ± 20 V 10 A 5 A 15 A 81 W 32 Operating Junction Temperature TJ Ratings W -55 to +150 o C -55 to +150 o C 300 o C Notes: 1: Repetitive rating: Pulse width limited by max. juntion temperature Thermal Characteristics Symbol Parameter Typ. Max. Units RθJC(IGBT) Thermal Resistance, Junction to Case - 1.55 o C/W RθJC(Diode) Thermal Resistance, Junction to Case - 3.2 o C/W RθJA Thermal Resistance, Junction to Ambient ©2008 Fairchild Semiconductor Corporation FGP5N60UFD Rev. A - 1 62.5 oC/W www.fairchildsemi.com FGP5N60UFD 600V, 5A Field Stop IGBT October 2008 Device Marking Device Package Packaging Type FGP5N60UFD FGP5N60UFDTU TO-220 Tube Electrical Characteristics of the IGBT Symbol Parameter Max Qty Qty per Tube per Box 50ea - TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 600 - - V Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA ∆BVCES ∆TJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 250µA - 0.7 - V/oC ICES Collector Cut-Off Current VCE = VCES, VGE = 0V, TC = 25oC - - 250 µA VCE = VCES, VGE = 0V, TC = 125oC - - 1 mA VGE = VGES, VCE = 0V - - ±400 nA IC = 250µA, VCE = VGE 4.0 5.0 6.5 V IC = 5A, VGE = 15V - 1.9 2.4 V IC = 5A, VGE = 15V, TC = 125oC - 2.1 - V - 290 - pF IGES G-E Leakage Current On Characteristics VGE(th) G-E Threshold Voltage VCE(sat) Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz - 40 - pF - 10 - pF Switching Characteristics td(on) Turn-On Delay Time - 6 - ns tr Rise Time - 8 - ns td(off) Turn-Off Delay Time - tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss Ets td(on) tr Rise Time - 11 - ns td(off) Turn-Off Delay Time - 48 - ns tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss - 0.082 - mJ Ets Total Switching Loss - 0.159 - mJ - 44 - 20 - 0.075 - mJ - 0.059 - mJ Total Switching Loss - 0.134 - mJ Turn-On Delay Time - 8 - ns Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge FGP5N60UFD Rev. A VCC = 400V, IC = 5A, RG = 20Ω, VGE = 15V, Inductive Load, TC = 25oC VCC = 400V, IC = 5A, RG = 20Ω, VGE = 15V, Inductive Load, TC = 125oC VCE = 400V, IC = 5A, VGE = 15V 2 ns ns - 30 - ns - 0.077 - mJ - 19.5 - nC - 2.5 - nC - 10.5 - nC www.fairchildsemi.com FGP5N60UFD 600V, 5A Field Stop IGBT Package Marking and Ordering Information Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time TC = 25°C unless otherwise noted Test Conditions IF = 5A IES =5A, dIES/dt = 200A/µs Qrr Diode Reverse Recovery Charge FGP5N60UFD Rev. A Min. Typ. Max TC = 25oC - 1.7 2.3 TC = 125oC - 1.5 - TC = 25oC - 30 - - 140 - TC = 25oC - 25 - o - 173 - TC = 125oC TC = 125 C 3 Units V ns nC www.fairchildsemi.com FGP5N60UFD 600V, 5A Field Stop IGBT Electrical Characteristics of the Diode Figure 1. Typical Output Characteristics 15 Figure 2. Typical Output Characteristics 15 o TC = 25 C 15V 20V 12V Collector Current, IC [A] Collector Current, IC [A] o TC = 125 C 15V 20V 10 10V 5 12V 10 10V 5 VGE = 8V VGE = 8V 0 0 2 4 6 8 Collector-Emitter Voltage, VCE [V] 0 10 0 Figure 3. Typical Saturation Voltage Characteristics 20 Common Emitter VCE = 20V Common Emitter VGE = 15V o Collector Current, IC [A] o Collector Current, IC [A] 10 Figure 4. Transfer Characteristics 15 TC = 25 C o TC = 125 C 10 5 TC = 25 C 10 o TC = 125 C 1 0 0 1 2 3 Collector-Emitter Voltage, VCE [V] 6 4 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 12 20 Common Emitter VGE = 15V Collector-Emitter Voltage, VCE [V] Common Emitter 10A 2.5 2.0 5A 1.5 IC = 2.5A 1.0 25 8 10 Gate-Emitter Voltage,VGE [V] Figure 6. Saturation Voltage vs. VGE 3.0 Collector-Emitter Voltage, VCE [V] 2 4 6 8 Collector-Emitter Voltage, VCE [V] o TC = -40 C 16 12 8 10A 4 5A IC = 2.5A 0 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] FGP5N60UFD Rev. A 4 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGP5N60UFD 600V, 5A Field Stop IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 20 Common Emitter Common Emitter o o TC = 25 C Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] Figure 8. Saturation Voltage vs. VGE 16 12 8 10A 4 5A IC = 2.5A 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] TC = 125 C 16 12 8 5A 4 10A IC = 2.5A 0 20 0 Figure 9. Capacitance Characteristics 15 Common Emitter VGE = 0V, f = 1MHz Common Emitter Gate-Emitter Voltage, VGE [V] o o TC = 25 C Capacitance [pF] 20 Figure 10. Gate charge Characteristics 600 Cies 400 Coes 200 Cres 0 1 10 Collector-Emitter Voltage, VCE [V] TC = 25 C 12 VCC = 100V 300V 9 200V 6 3 0 30 0 Figure 11. SOA Characteristics 5 10 15 Gate Charge, Qg [nC] 20 Figure 12. Turn-on Characteristics vs. Gate Resistance 50 30 10µs 10 100µs Switching Time [ns] Collector Current, Ic [A] 4 8 12 16 Gate-Emitter Voltage, VGE [V] 1ms 1 10 ms DC 0.1 Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature FGP5N60UFD Rev. A 10 100 Collector-Emitter Voltage, VCE [V] Common Emitter VCC = 400V, VGE = 15V IC = 5A td(on) o TC = 25 C o TC = 125 C 1 0.01 1 tr 10 0 1000 10 20 30 40 50 Gate Resistance, RG [Ω] 5 www.fairchildsemi.com FGP5N60UFD 600V, 5A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Gate Resistance Figure 14. Turn-on Characteristics vs. Collector Current 100 500 Common Emitter VCC = 400V, VGE = 15V IC = 5A Common Emitter VGE = 15V, RG = 20Ω o TC = 25 C o o Switching Time [ns] Switching Time [ns] TC = 25 C o TC = 125 C 100 td(off) TC = 125 C tr 10 td(on) tf 10 0 10 20 30 40 1 50 2 4 Gate Resistance, RG [Ω] 6 8 10 Collector Current, IC [A] Figure 15. Turn-off Characteristics vs. Collector Current Figure 16. Switching Loss vs Gate Resistance 500 200 500 Common Emitter VGE = 15V, RG = 20Ω Common Emitter VCC = 400V, VGE = 15V o IC = 5A TC = 25 C 100 o o Switching Loss [uJ] Switching Time [ns] TC = 125 C td(off) tf TC = 25 C o TC = 125 C 100 Eon Eoff 20 10 2 4 6 8 40 10 0 Collector Current, IC [A] Figure 17. Switching Loss vs Collector Current 10 20 30 40 Gate Resistance, RG [Ω] 50 Figure 18. Turn off Switching SOA Characteristics 1000 20 Common Emitter VGE = 15V, RG = 20Ω 10 o Collector Current, IC [A] Switching Loss [uJ] TC = 25 C o TC = 125 C Eon 100 Eoff 1 Safe Operating Area o VGE = 15V, TC = 125 C 0.1 10 2 4 6 8 1 10 FGP5N60UFD Rev. A 10 100 1000 Collector-Emitter Voltage, VCE [V] Collector Current, IC [A] 6 www.fairchildsemi.com FGP5N60UFD 600V, 5A Field Stop IGBT Typical Performance Characteristics Figure 19. Forward Characteristist Figure 20. Reverse Current 15 100 10 o o Reverse Current , IR [µA] Forward Current, IF [A] TC = 125 C TJ = 125 C o TJ = 25 C 1 o TJ = 75 C o TC = 75 C 1 0.1 o TC = 25 C 0.01 0.1 0 1 2 Forward Voltage, VF [V] 0 15 Figure 21. Reverse Recovery Current 200 400 Reverse Voltage, VR [V] 600 Figure 22. Stored Charge 2.5 50 Stored Recovery Charge, Qrr [nC] Reverse Recovery Currnet, Irr [A] 10 2.0 200A/µs 1.5 1.0 di/dt = 100A/µs 0.5 0.0 2 4 6 8 Forward Current, IF [A] 40 30 200A/µs 20 di/dt = 100A/µs 10 0 10 2 4 6 8 10 Forward Current, IF [A] Figure 23. Reverse Recovery Time Reverse Recovery Time, trr [ns] 50 40 200A/µs 30 di/dt = 100A/µs 20 10 0 2 4 6 8 10 Forward Current, IF [A] FGP5N60UFD Rev. A 7 www.fairchildsemi.com FGP5N60UFD 600V, 5A Field Stop IGBT Typical Performance Characteristics FGP5N60UFD 600V, 5A Field Stop IGBT Typical Performance Characteristics Thermal Response [Zthjc] Figure 24. Transient Thermal Impedance of IGBT 0.5 1 0.2 0.1 0.01 0.1 0.05 0.02 0.01 PDM single pulse 1E-3 1E-5 t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-4 1E-3 0.01 0.1 1 Rectangular Pulse Duration [sec] FGP5N60UFD Rev. A 8 www.fairchildsemi.com FGP5N60UFD 600V, 5A Field Stop IGBT Mechanical Dimensions TO-220 FGP5N60UFD Rev. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I35 FGP5N60UFD Rev. A 10 www.fairchildsemi.com FGP5N60UFD 600V, 5A Field Stop IGBT TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks.