FJP5321 FJP5321 High Voltage and High Reliability • High speed Switching • Wide Safe Operating Area TO-220 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 800 Units V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current (DC) 5 A ICP *Collector Current (Pulse) 10 A IB Base Current (DC) 2 A IBP *Base Current (Pulse) 4 A 500 V 7 V PC Power Dissipation(TC=25°C) 100 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C * Pulse Test: Pulse Width = 5ms, Duty Cycle≤10% Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC = 1mA, IE = 0 Min. 800 Typ. - Max. - Units V BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 500 - - V BVEBO Emitter-Base Breakdown Voltage IC =1mA, IC = 0 7 - - V ICBO Collector Cut-off Current VCB = 800V, IE = 0 - - 100 µA IEBO Emitter Cut-off Current VEB = 7V, IC = 0 - - 10 µA hFE1 hFE2 DC Current Gain VCE = 5V, IC = 0.6A VCE = 5V, IC = 3A 15 8 - 40 - VCE(sat) Collector-Emitter Saturation Voltage IC = 3A, IB = 0.6A - - 1.0 VBE(sat) Base-Emitter Saturation Voltage IC = 3A, IB = 0.6A - - 1.5 V V fT Current Gain bandwidth Product VCE= 10V, IC = 0.6A - 14 - MHz Cob Output Capacitance VCB = 10V, IE = 0, f = 1MHz - 65 100 pF Cib Input Capacitance VEB = 7V, IC = 0, f = 1MHz - 1400 2000 pF tON Turn On Time - 0.5 µs Storage Time - 6.5 µs tF Fall Time VCC = 125V, IC = 1A IB1 = -IB2 = 0.2A RL = 125Ω - tSTG - - 0.3 µs tON Turn On Time - - 0.5 µs tSTG Storage Time - - 3.0 µs tF Fall Time - - 0.3 µs ©2003 Fairchild Semiconductor Corporation VCC = 250V, IC = 4A IB1 = 0.8A, IB2 = -1.6A RL = 62.5Ω Rev. A, December 2003 Symbol Rθjc Thermal Resistance Rθja ©2003 Fairchild Semiconductor Corporation Characteristics Junction to Case Junction to Ambient Rating 1.25 Unit °C/W 62.5 Rev. A, December 2003 FJP5321 Thermal Characteristics TC=25°C unless otherwise noted FJP5321 Typical Characteristics 5.0 100 VCE = 5 V 4.5 4.0 o TC = 125 C hFE, DC CURRENT GAIN IC [A], COLLECTOR CURRENT o TC = 75 C IB = 350mA 3.5 3.0 IB = 150mA 2.5 IB = 100mA 2.0 1.5 IB = 50mA 1.0 o TC = - 25 C o TC = 25 C 10 0.5 0.0 0 1 2 3 4 5 6 7 8 9 1 0.01 10 0.1 Figure 1. Static Characteristic 10 Figure 2. DC current Gain 10 10 VBE(sat) [V], SATURATION VOLTAGE IC = 5 IB VCE(sat) [V], SATURATION VOLTAGE 1 IC [A], COLLECTOR CURRENT VCE [V], COLLECTOR-EMITTER VOLTAGE o TC = 125 C 1 o TC = 75 C o TC = - 25 C 0.1 o TC = 25 C 0.01 0.1 1 IC = 5 IB o TC = 25 C 1 o TC = - 25 C o o TC = 125 C TC = 75 C 0.1 0.1 10 1 IC [A], COLLECTOR CURRENT 10 IC [A], COLLECTOR CURRENT Figure 3. Saturation Voltage Figure 4. Saturation Voltage IC[A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT 100 10 IB1=3A, RB2=0 L=1mH, VCC=20V 1 10 100 1000 10ms IC MAX (Pulse) 10 50µs 1ms IC MAX (DC) 100µs 1 0.1 0.01 1 10 100 1000 VCE [V], COLLECTOR-EMITTER VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Reverse Bias Safe Operating Area ©2003 Fairchild Semiconductor Corporation Figure 6. Forward Bias Safe Operating Area Rev. A, December 2003 FJP5321 Typical Characteristics (Continued) 120 10 PC[W], POWER DISSIPATION tF, tSTG [µ s], SWITCHING TIME 100 1 0.1 IB1=0.2A, IB2=-0.2A VCC=125V 80 60 40 20 0 0.01 0.1 1 IC [A], COLLECTOR CURRENT Figure 7. Resistive Load Switching Time ©2003 Fairchild Semiconductor Corporation 10 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 8. Power Derating Rev. A, December 2003 FJP5321 Package Dimensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters ©2003 Fairchild Semiconductor Corporation Rev. A, December 2003 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST® FASTr™ Bottomless™ FRFET™ CoolFET™ CROSSVOLT™ GlobalOptoisolator™ GTO™ DOME™ HiSeC™ EcoSPARK™ I2C™ E2CMOS™ EnSigna™ ImpliedDisconnect™ FACT™ ISOPLANAR™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2003 Fairchild Semiconductor Corporation Rev. I6