FS08...I STANDARD SCR IPAK (Plastic) On-State Current Gate Trigger Current 8 Amp >0.5 to <15 mA Off-State Voltage A K 200 V ÷ 600 V These series of Silicon Controlled R ectifier use a high performance PNPN technology. A G These parts are intended for general purpose applications where high gate sensitivity is required. Absolute Maximum Ratings, according to IEC publication No. 134 SYMBOL IT(RMS) IT(AV) ITSM ITSM I2t VGRM IGM PGM PG(AV) Tj Tstg Tsld SYMBOL VDRM VRRM PARAMETER On-state Current Average On-state Current Non-repetitive On-State Current Non-repetitive On-State Current Fusing Current Peak Reverse Gate Voltage Peak Gate Current Peak Gate Dissipation Gate Dissipation Operating Temperature Storage Temperature Soldering Temperature PARAMETER Repetitive Peak Off State Voltage CONDITIONS Min. 180º Conduction Angle, Tc = 110 ºC Half Cycle, Θ = 180 º, TC = 110 ºC Half Cycle, 60 Hz Half Cycle, 50 Hz tp = 10ms, Half Cycle IGR = 10 µA 20 µs max. 20 µs max. 20ms max. -40 -40 10s max. CONDITIONS RGK = 1 KΩ Max. Unit 8 5 73 70 24.5 5 4 5 1 +125 +150 260 A A A A A 2s V A W W ºC ºC ºC VOLTAGE B 200 D 400 Unit M 600 V Dec - 02 FS08...I STANDARD SCR Electrical Characteristics SYMBOL PARAMETER CONDITIONS SENSITIVITY MIN MAX MAX MAX MAX MAX MIN 09 2 15 08 0.5 5 Unit mA IGT Gate Trigger Current VD = 12 VDC , RL = 33Ω. Tj = 25 ºC IDRM / IRRM Off-State Leakage Current VTM VGT VGD On-state Voltage Gate Trigger Voltage Gate Non Trigger Voltage IH IL Latching Current Tj = 125 ºC V D = VDRM , VR = VRRM , Tj = 25 ºC at IT = 16 Amp, tp = 380 µs, Tj = 25 ºC VD = 12 VDC , RL = 33Ω, Tj = 25 ºC VD = VDRM , RL = 3.3KΩ, Tj = 125 ºC Gate Open IT = 100 mA , MAX RGK = 220Ω IG = 1.2 IGT MAX 25 30 40 50 mA dv / dt Critical Rate of Voltage Rise VD = 0.67 x VDRM , 50 150 V/µs di / dt Critical Rate of Current Rise IG = 2 x IGT Tr ≤ 100 ns, Tj = 125 ºC Rth(j-c) Thermal Resistance Junction-Case for DC Tj = 125 ºC Rth(j-a) Thermal Resistance Junction-Amb Tj = 125 ºC Vt0 Threshold Voltage Tj = 125 ºC Rd Dynamic resistance Tj = 125 ºC Holding Current Gate Open MIN mA µA V V V 2 5 1.6 1.3 0.2 mA 50 A/µs 20 ºC/W 100 ºC/W MAX 0.85 V MAX 46 mΩ MIN PART NUMBER INFORMATION F S 08 08 B I 00 TU FAGOR PACKAGING FORMING SCR CURRENT CASE VOLTAGE SENSITIVITY Dec - 02 FS08...I STANDARD SCR Fig. 1: Maximum average power dissipation versus average on-state current. Fig. 2: Average and D.C. on-state current versus case temperature. P (W) I T(av) (A) 10 10 8 8 6 6 D.C. 4 α = 180 º 4 2 360 º 2 α IT(av)(A) 0 0 1 2 3 4 5 6 7 T case (ºC) 0 0 Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration. 25 50 75 100 125 Fig. 4: Relative variation of gate trigger current, holding and latching current versus junction temperature. K = [Zth(j-c) / Rth (j-c)] IGT, IH (Tj) / IGT, IH (Tj = 25 ºC) 2.0 1.0 1.8 1.6 IGT 1.4 0.5 1.2 IH & IL 1.0 0.8 0.6 0.2 0.4 0.2 0.1 1E-3 tp (s) 1E-2 1E-1 0.0 1E+0 Fig. 5: Non repetitive surge peak on-state current versus number of cycles. Tj (ºC) -40 -20 0 20 40 60 80 100 120 140 Fig. 6: Non repetitive surge peak on-state current for a sinusoidal pulse with width: tp < 10 ms, and corresponding value of I2t. ITSM(A). I2t (A2s) I TSM (A) 300 80 Tj initial = 25 ºC Tj initial = 25 ºC F = 50 Hz 70 ITSM 60 100 50 40 50 30 I2 t 20 20 10 0 1 10 100 Number of cycles 1000 tp(ms) 10 1 2 5 10 Dec - 02 FS08...I STANDARD SCR Fig. 9: On-state characteristics (maximum values). ITM(A) 100.0 Tj = Tj max. 10.0 Tj = 25 ºC 1.0 Tj max Vto = 0.85 V Rt = 46 mΩ VTM(V) 0.1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 PACKAGE MECHANICAL DATA IPAK TO 251-AA 8º±2º REF. A ø1x0.15 E1 c2 E L3 8º±2º 8º±2º D1 D H 8º±2º 8º±2º L1 e b b1 L A1 c A A1 b b1 c c2 D D1 E E1 e L L1 L3 Min. 2.19 0.89 0.64 0.76 0.46 5.97 5.21 6.35 5.21 8.89 1.91 0.89 DIMENSIONS Milimeters Nominal 2.3±0.08 1.067±0.01 0.75±0.1 0.95 0.8±0.013 6.1±0.1 6.58±0.14 5.36±0.1 2.28BSC 9.2±0.2 2±0.1 Max. 2.38 1.14 0.89 1.14 0.58 6.22 5.52 6.73 5.46 9.65 2.28 1.27 Marking: type number Weight: 0.2 g Dec - 02