FTM3725 FTM3725 NPN Transistor • This device is designed for high current, low impedance line driver applications. • Sourced from process 26. E1 E2 B1 B2 B4 E3 E4 B4 C4 C4 C3 C4 C2 C2 C1 C1 SOIC-16 Mark: FTM3725 Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol VCEO Collector-Emitter Voltage Parameter Value 40 Units V VCBO VEBO Collector-Base Voltage 60 V Emitter-Base Voltage 6.0 IC Collector Current V 1.2 A TJ, TSTG Operating and Storage Junction Temperature Range - 55 ~ 150 °C - Continuous * These ratings are limiting values above whitch the serviceability of any semiconductor device may be impaird. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25°C unless otherwise noted Symbol Off Characteristics Parameter Test Condition Min. Typ. Max. Units V(BR)CEO Collector-Emitter Breakdown Voltage * IC = 10mA, IB = 0 40 V V(BR)CES Collector-Emitter Breakdown Voltage IC = 10µA, VBE = 0 60 V V V(BR)CBO Collector-Base Breakdown Voltage IC = 10µA, IE = 0 60 V(BR)EBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 6.0 ICBO Collector Cutoff Current VCB = 50V, IE = 0 VCB = 50V, IE = 0, Ta = 100°C V 100 10 nA µA On Characteristics * hFE DC Current Gain IC = 10mA, VCE = 1.0V IC = 100mA, VCE = 1.0V IC = 100mA, VCE = 1.0V, Ta = 55°C IC = 300mA, VCE = 1.0V IC = 500mA, VCE = 1.0V IC = 500mA, VCE = 1.0V, Ta = 55°C IC = 800mA, VCE = 2.0V IC = 1.0mA, VCE = 5.0V 30 60 30 40 35 20 20 25 180 VCE(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA IC = 100mA, IB = 10mA IC = 300mA, IB = 30mA IC = 500mA, IB = 50mA IC = 800mA, IB = 80mA IC = 1.0mA, IB = 100mA 0.25 0.26 0.4 0.52 0.8 0.95 V V V V V V VBE(sat) Base-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA IC = 100mA, IB = 10mA IC = 300mA, IB = 30mA IC = 500mA, IB = 50mA IC = 800mA, IB = 80mA IC = 1.0mA, IB = 100mA 0.76 0.86 1.1 1.2 1.5 1.7 V V V V V V ©2004 Fairchild Semiconductor Corporation Rev. B, June 2004 Symbol Parameter Small Signal Characteristics Test Condition Min. Typ. Max. Units fT Current Gain Bandwidth Product IC = 50mA, VCE = 10V, f = 100MHz Cobo Output Capacitance VCB = 10V, IE = 0, f = 1.0MHz 250 15 MHz pF Cibo Input Capacitance VEB = 0.5V, IC = 0, f = 1.0MHz 65 pF Switching Characteristics ton Turn-on Time td Delay Time tr Rise Time toff Turn-off Time ts Storage Time tf Fall Time VCC = 30V, VBE = 3.8V IC = 500mA, IB1 = 50mA VCC = 30V, IC = 500mA IB1 = IB2 = 50mA 20 ns 10 ns 12 ns 250 ns 235 ns 15 ns * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 1.0% Thermal Characteristics Ta=25°C unless otherwise noted Symbol PD Parameter Total Device Dissipation Derate above 25°C Max. 1.0 8.0 Units W mW/°C RθJA Thermal Resistance, Junction to Ambient Effectine 4 Die Each Die 125 240 °C/W °C/W ©2004 Fairchild Semiconductor Corporation Rev. B, June 2004 FTM3725 Electrical Characteristics* (Continued) Ta=25°C unless otherwise noted FTM3725 Package Dimensions SOIC-16 Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation Rev. B, June 2004 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2004 Fairchild Semiconductor Corporation Rev. I11