FW163 Ordering number : ENA0349 SANYO Semiconductors DATA SHEET FW163 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 Gate-to-Source Voltage VGSS ±20 V V --7 A Drain Current (DC) ID Drain Current (PW≤10s) ID ID Duty cycle≤1% --9 A Duty cycle≤1% --14 A IDP PD Duty cycle≤1% --36 A Mounted on a ceramic board (1200mm2✕0.8mm) 1unit, PW≤10s 1.7 W PT Tch Mounted on a ceramic board (1200mm2✕0.8mm), PW≤10s Channel Temperature Storage Temperature Tstg Drain Current (PW≤100ms) Drain Current (PW≤10µs) Allowable Power Dissipation Total Dissipation 2.0 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Symbol Ratings min typ Unit max Zero-Gate Voltage Drain Current IDSS ID=--1mA, VGS=0V VDS=--30V, VGS=0V Gate-to-Source Leakage Current Forward Transfer Admittance IGSS VGS(off) yfs VGS= ±16V, VDS=0V VDS=--10V, ID=--1mA VDS=--10V, ID=--7A ID=--7A, VGS=--10V ID=--4A, VGS=--4.5V 19 Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 27 39 mΩ ID=--4A, VGS=--4V VDS=--10V, f=1MHz 31 45 mΩ Input Capacitance RDS(on)3 Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz VDS=--10V, f=1MHz Cutoff Voltage Marking : W163 V(BR)DSS Conditions --30 V --1.0 8.4 --1 µA ±10 µA --2.4 V 14 S 25 2500 mΩ pF 460 pF 370 pF Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 72606 / 32406PA MS IM TB-00001036 No. A0349-1/4 FW163 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Turn-ON Delay Time td(on) See specified Test Circuit. 28 Rise Time tr td(off) See specified Test Circuit. 150 ns See specified Test Circuit. 160 ns Turn-OFF Delay Time Fall Time tf Qg Total Gate Charge See specified Test Circuit. 95 ns VDS=--10V, VGS=--10V, ID=--7A 47 nC 7 nC Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--7A VDS=--10V, VGS=--10V, ID=--7A Diode Forward Voltage VSD IS=--7A, VGS=0V 9 V VDD= --15V 0V --10V 0.3 5 0.2 1.5 1.8 MAX VOUT PW=10µs D.C.≤1% 6.0 4.4 4 G 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 FW163 P.G 50Ω S 0.1 5.0 ID= --7A RL=2.14Ω VIN D 0.43 1.27 0.595 --1.5 Switching Time Test Circuit VIN 1 nC --0.82 Package Dimensions unit : mm 7005-003 8 ns SANYO : SOP8 ID -- VDS 0V --4 . --8 VGS= --2.5V --2 --4 --2 --1 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 --1.0 IT10776 0 --0.5 --1.0 --1.5 --2.0 25° --2 5°C C --3 --6 Ta=7 5°C --4 Drain Current, ID -- A V -- VDS= --10V --6.0 V --5 ID -- VGS --10 --5.0 --8.0V Drain Current, ID -- A --6 4.5 V --10.0V --7 --2.5 --3.0 Gate-to-Source Voltage, VGS -- V --3.5 IT10777 No. A0349-2/4 FW163 RDS(on) -- VGS 70 RDS(on) -- Ta 50 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 60 --7A 50 ID= --4A 30 20 10 0 0 --2 --4 --6 --8 --10 --12 --14 Gate-to-Source Voltage, VGS -- V yfs -- ID Ta= 5 --2 5 °C C 75° 3 2 1.0 7 2 3 5 7 --1.0 2 3 5 7 --10 Drain Current, ID -- A 2 3 4.5V = -S , VG --4A 0.0V = --1 VGS --7A, = ID 20 15 10 5 --40 --20 0 20 40 60 80 100 120 140 160 IT10779 IS -- VSD VGS=0V --1.0 7 5 3 2 --0.1 7 5 3 2 --0.001 --0.4 --0.6 --0.7 --0.8 --0.9 --1.0 Diode Forward Voltage, VSD -- V --1.1 IT10781 Ciss, Coss, Crss -- VDS 7 VDD= --15V VGS= --10V 3 --0.5 IT10780 SW Time -- ID 5 f=1MHz 5 3 2 td(off) Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns I D= , V --0.01 7 5 3 2 5 --0.1 tf 100 tr 7 5 td(on) 3 Ciss 2 1000 7 2 5 Coss 3 Crss 2 100 10 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain Current, ID -- A 2 0 3 --100 7 5 3 2 Drain Current, ID -- A --8 --7 --6 --5 --4 --3 --2 --1 0 0 5 10 15 20 25 30 35 Total Gate Charge, Qg -- nC 40 45 50 IT10784 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V VDS= --10V ID= --7A --9 --5 IT10782 VGS -- Qg --10 Gate-to-Source Voltage, VGS -- V 25 --10 7 5 3 2 C 25° 7 4A -I D= 30 = -V GS Ambient Temperature, Ta -- °C 3 10 35 IT10778 VDS= --10V 2 4.0 0 --60 --16 Source Current, IS -- A Forward Transfer Admittance, yfs -- S 5 40 5 °C 25° C --25 °C 40 45 Ta= 7 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C --10 7 5 3 2 ASO ≤10µs IDP= --36A 1m s 10 ID= --7A ms 10 0m s DC --1.0 7 5 3 2 --0.1 7 5 3 2 --30 IT10783 op 10 era s tio n Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board (1200mm2✕0.8mm) 1unit --0.01 --0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT10785 No. A0349-3/4 PD(FET 1) -- PD(FET 2) 2.0 1.8 1.7 1.6 M ou nte do na 1.4 ce ram ic 1.2 bo ard (12 00 1.0 mm 2 0.8 ✕0 .8m m) ,P 0.6 W ≤1 0 s 0.4 PD -- Ta 2.5 Allowable Power Dissipation, PD -- W Allowable Power Dissipation (FET 1), PD -- W FW163 0.2 Mounted on a ceramic board (1200mm2✕0.8mm), PW≤10s 2.0 1.7 1.5 To ta ld iss ipa 1u 1.0 nit tio n 0.5 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Allowable Power Dissipation (FET 2), PD -- W 1.8 2.0 IT10786 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT10787 Note on usage : Since the FW163 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2006. Specifications and information herein are subject to change without notice. PS No. A0349-4/4