FW256 Ordering number : ENN7756 N-Channel Silicon MOSFET FW256 General-Purpose Switching Device Applications Features • • • • For DC / DC converters, Motor drives, Inverters. Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 Gate-to-Source Voltage VGSS ±20 V 5 A 14 A 2.0 W 2.3 W Drain Current (DC) ID Drain Current (Pulse) IDP Allowable Power Dissipation PD Total Dissipation PT PW≤10µs, duty cycle≤1% Mounted on a ceramic board(1200mm2✕0.8mm) 1unit, PW≤10s Mounted on a ceramic board(1200mm2✕0.8mm), PW≤10s V Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current V(BR)DSS IDSS IGSS Conditions ID=1mA, VGS=0 VDS=60V, VGS=0 VGS(off) yfs VGS= ±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=3A RDS(on)1 RDS(on)2 ID=3A, VGS=10V ID=3A, VGS=4V Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Ratings min typ Unit max 60 V 1 ±10 1.2 4 2.6 6 V S 43 58 mΩ 56 84 mΩ 790 Marking : W256 µA µA pF 115 pF 88 pF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 73004 TS IM TA-101129 No.7756-1/4 FW256 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Turn-ON Delay Time td(on) See specified Test Circuit. 10 ns Rise Time tr td(off) See specified Test Circuit. 22 ns See specified Test Circuit. 74 ns tf See specified Test Circuit. 48 ns Turn-OFF Delay Time Fall Time Total Gate Charge Qg VDS=30V, VGS=10V, ID=5A 16 nC Gate-to-Source Charge Qgs VDS=30V, VGS=10V, ID=5A 4 nC Gate-to-Drain “Miller” Charge Qgd VDS=30V, VGS=10V, ID=5A Diode Forward Voltage VSD IS=5A, VGS=0 3.4 Package Dimensions unit : mm 2129 VDD=30V 0.3 6.0 4.4 1.5 0.43 D VOUT PW=10µs D.C.≤1% 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 0.1 1.27 ID=3A RL=10Ω VIN 0.2 1.8max 4 5.0 0.595 V 10V 0V 5 1 1.2 Switching Time Test Circuit VIN 8 nC 0.86 G FW256 P.G 50Ω S SANYO : SOP8 ID -- VDS ID -- VGS 10 VDS=10V 4 3 1.0 2 0.5 1 0 0 --25°C 1.5 5 75°C 2.0 6 C Ta= 2.5 7 25° V 4.0V Drain Current, ID -- A 3.0 8 VGS=3.0V V 3.5 9 5.0 Drain Current, ID -- A 4.0 10V 8.0V 6 .0 4.5 3.5 V 5.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V 0.9 1.0 IT05210 0 0.5 1.0 1.5 2.0 2.5 3.0 Gate-to-Source Voltage, VGS -- V 3.5 4.0 IT05211 No.7756-2/4 FW256 RDS(on) -- VGS 120 110 100 90 80 70 60 50 40 30 20 10 0 4 6 8 10 12 14 Gate-to-Source Voltage, VGS -- V 5° C °C a= T 25 1.0 °C 75 7 5 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 50 40 30 20 --40 --20 0 20 40 60 80 100 120 140 160 IT05213 IF -- VSD VGS=0 3 2 1.0 7 5 3 2 0.1 7 5 3 0.01 0.2 5 7 10 IT05214 Drain Current, ID -- A 3 2 tr 2 td(on) 10 7 5 Ciss 7 5 3 2 Coss Crss 100 7 2 5 3 1.0 0.1 2 3 5 7 2 1.0 5 3 Drain Current, ID -- A 0 7 10 IT05216 Drain Current, ID -- A 7 6 5 4 3 2 0 8 10 12 14 Total Gate Charge, Qg -- nC 16 18 20 IT05218 20 25 30 <100µs 1m ID=5A s 10 3 2 DC 1.0 7 5 ms 10 0m op era s tio Operation in this area is limited by RDS(on). 3 2 0.1 7 5 IT05217 IDP=14A 10 7 5 3 2 1 6 15 ASO 3 2 8 4 10 5 VDS=30V ID=5A 2 5 Drain-to-Source Voltage, VDS -- V VGS -- Qg 10 0 1.2 IT05215 f=1MHz 3 9 1.0 2 Ciss, Coss, Crss -- pF 3 0.8 100 td(off) tf 7 5 0.6 Ciss, Coss, Crss -- VDS 3 VDD=30V VGS=10V 100 0.4 Diode Forward Voltage, VSD -- V SW Time -- ID 5 Switching Time, SW Time -- ns V 3 =10 I D= V GS , 3A I D= 60 2 0.1 0.01 Gate-to-Source Voltage, VGS -- V VG A, Ambient Temperature, Ta -- °C Forward Drain Current, IF -- A Forward Transfer Admittance, yfs -- S 3 --2 V 4 S= 70 10 7 5 5 2 80 10 --60 16 VDS=10V 7 90 IT05212 yfs -- ID 10 100 5°C 25° C 2 110 Ta= 7 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 130 --25° C Ta=25°C ID=3A 140 0 RDS(on) -- Ta 120 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 150 n(P W ≤1 0 s) Ta=25°C Single pulse Mounted on a ceramic board(1200mm2✕0.8mm) 1unit 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 100 IT05219 No.7756-3/4 PD(FET 1) -- PD(FET 2) 2.4 2.2 M ou 2.0 nte do 1.8 na 1.6 cer am 1.4 ic bo ard 1.2 (12 00 1.0 mm 2 ✕0 .8m 0.8 m) ,P 0.6 W ≤1 0 s 0.4 PD -- Ta 2.5 Allowable Power Dissipation, PD -- W Allowable Power Dissipation (FET 1), PD -- W FW256 0.2 0 Mounted on a ceramic board (1200mm2✕0.8mm), PW≤10s 2.3 2.0 To t 1.5 al di 1u nit 1.0 ss ip ati on 0.5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Allowable Power Dissipation (FET 2), PD -- W 2.2 2.4 IT05220 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT05221 Note on usage : Since the FW256 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2004. Specifications and information herein are subject to change without notice. PS No.7756-4/4