GT20J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT20J321 High Power Switching Applications Fast Switching Applications • The 4th generation • Enhancement-mode • Unit: mm Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.04 µs (typ.) : Eon = 0.40 mJ (typ.) Low switching loss : Eoff = 0.43 mJ (typ.) • Low saturation voltage: VCE (sat) = 2.0 V (typ.) • FRD included between emitter and collector Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES ±20 V DC IC 20 1 ms ICP 40 DC IF 20 1 ms IFM 40 Collector power dissipation (Tc = 25°C) PC 45 W Junction temperature Tj 150 °C Tstg −55 to 150 °C Characteristics Symbol Max Unit Thermal resistance (IGBT) Rth (j-c) 2.78 °C/W Thermal resistance (diode) Rth (j-c) 4.23 °C/W Collector current Emitter-collector forward current Storage temperature range A JEDEC ― JEITA ― TOSHIBA A 2-10R1C Weight: 1.7 g (typ.) Thermal Characteristics Equivalent Circuit Collector Gate Emitter 1 2002-04-08 GT20J321 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = ±20 V, VCE = 0 ― ― ±500 nA Collector cut-off current ICES VCE = 600 V, VGE = 0 ― ― 1.0 mA VGE (OFF) IC = 2 mA, VCE = 5 V 3.5 ― 6.5 V VCE (sat) IC = 20 A, VGE = 15 V ― 2.0 2.45 V VCE = 10 V, VGE = 0, f = 1 MHz ― 3000 ― pF td (on) ― 0.06 ― tr ― 0.04 ― Inductive Load ― 0.17 ― VCC = 300 V, IC = 20 A ― 0.24 ― ― 0.04 ― ― 0.34 ― Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Cies Turn-on delay time Rise time Switching time Turn-on time ton Turn-off delay time td (off) Fall time Switching loss tf VGG = +15 V, RG = 33 Ω (Note 1) Turn-off time toff Turn-on switching loss Eon ― 0.40 ― Turn-off switching loss Eoff ― 0.43 ― (Note 2) µs mJ Peak forward voltage VF IF = 20 A, VGE = 0 ― ― 2.1 V Reverse recovery time trr IF = 20 A, di/dt = −100 A/µs ― 100 ― ns Note 1: Switching time measurement circuit and input/output waveforms VGE 90% 10% 0 −VGE IC L IC VCC 90% 90% RG VCE 0 VCE 10% td (off) 10% tf toff 10% td (on) 10% tr ton Note 2: Switching loss measurement waveforms VGE 90% 10% 0 IC 0 VCE 5% Eoff Eon 2 2002-04-08 GT20J321 IC – VCE VCE – VGE 40 15 Collector-emitter voltage VCE 20 Collector current IC 30 20 8 10 VGE = 7 V 0 0 1 2 Common emitter Tc = −40°C (V) 9 Common emitter Tc = 25°C (A) 20 3 4 Collector-emitter voltage VCE 16 12 8 40 10 IC = 5 A 0 0 5 (V) 4 8 VCE – VGE (V) Collector-emitter voltage VCE 16 12 8 40 10 20 4 IC = 5 A 4 8 12 16 VGE Common emitter Tc = 125°C (V) Common emitter Tc = 25°C (V) Collector-emitter voltage VCE VGE 20 VCE – VGE 16 12 40 8 20 10 4 IC = 5 A 0 0 20 (V) 4 8 12 Gate-emitter voltage IC – VGE 16 VGE 20 (V) VCE (sat) – Tc 40 5 Collector-emitter saturation voltage VCE (sat) (V) Common emitter VCE = 5 V 30 IC (A) 16 20 Gate-emitter voltage Collector current 12 Gate-emitter voltage 20 0 0 20 4 20 10 Tc = 125°C −40 4 Common emitter VGE = 15 V 40 3 30 20 2 10 IC = 5 A 1 25 0 0 4 8 12 Gate-emitter voltage 16 VGE 0 −60 20 (V) −20 20 60 Case temperature Tc 3 100 140 (°C) 2002-04-08 GT20J321 Switching time ton, tr, td (on) – RG (µs) ton, tr, td (on) 1 Switching time ton, tr, td (on) – IC 3 Common emitter VCC = 300 V VGG = 15 V IC = 20 A : Tc = 25°C : Tc = 125°C (Note 1) 0.3 ton 0.1 Switching time Switching time ton, tr, td (on) (µs) 3 td (on) tr 0.03 1 Common emitter VCC = 300 V VGG = 15 V RG = 33 Ω : Tc = 25°C : Tc = 125°C (Note 1) 0.3 0.1 ton td (off) 0.03 tr 0.01 1 3 10 30 100 Gate resistance RG 300 0.01 0 1000 (µs) toff, tf, td (off) Switching time toff 0.3 td (off) 0.1 0.03 tf 0.01 1 3 10 30 100 Gate resistance RG Switching loss 3 0.1 1 10 0.3 toff 0.1 tf 0.03 4 100 Gate resistance RG 8 12 Switching loss 10 30 300 (A) td (off) Eon, Eoff – RG Eoff 3 20 Common emitter VCC = 300 V VGG = 15 V RG = 33 Ω : Tc = 25°C : Tc = 125°C (Note 1) Collector current Eon 0.3 1 (Ω) Common emitter VCC = 300 V VGG = 15 V IC = 20 A : Tc = 25°C : Tc = 125°C (Note 2) 1 IC 3 0.01 0 1000 3 Common emitter VCC = 300 V VGG = 15 V IC = 20 A : Tc = 25°C : Tc = 125°C 1 (Note 2) Switching loss Switching loss Eon, Eoff (mJ) 10 300 16 Switching time toff, tf, td (off) – IC (mJ) 1 12 10 Common emitter VCC = 300 V VGG = 15 V IC = 20 A : Tc = 25°C : Tc = 125°C (Note 1) Eon, Eoff (µs) toff, tf, td (off) Switching time 3 8 Collector current Switching time toff, tf, td (off) – RG 10 4 (Ω) (Ω) (A) Eon, Eoff – IC Eon 0.1 Eoff 4 8 Collector current 4 20 0.3 0.03 0 1000 IC 16 12 IC 16 20 (A) 2002-04-08 GT20J321 VCE, VGE – QG C – VCE 100 Coes 3 10 30 100 300 Collector-emitter voltage VCE 12 300 200 8 VCE = 100 V 100 4 0 0 1000 20 40 (V) 60 100 Common (A) collector Irr Reverse recovery current Forward current IF (A) VGE = 0 30 20 Tc = 125°C 25 10 −40 1 1.5 Forward voltage 100 QG 120 0 140 (nC) trr, Irr – IF IF – VF 0.5 80 Gate charge 40 0 0 200 2 VF 2.5 30 10 300 trr 100 Irr 3 30 1 0 3 1000 Common collector di/dt = −100 A/µs VGE = 0 : Tc = 25°C : Tc = 125°C (ns) 3 1 Cres 300 5 (V) 10 Forward current Safe Operating Area 10 20 15 IF trr 10 Common emitter VGE = 0 f = 1 MHz Tc = 25°C 16 Reverse recovery time 30 400 VGE Collector-emitter voltage VCE (pF) C 300 Capacitance 1000 (V) Cies 3000 20 Common emitter RL = 15 Ω Tc = 25°C (V) 500 Gate-emitter voltage 10000 (A) Reverse Bias SOA 100 100 30 10 100 µs* IC (A) 50 µs* 1 ms* Collector current Collector current IC (A) IC max (pulse)* 30 IC max (continuous) DC operation 3 *: Single pulse 1 Tc = 25°C Curves must be 0.3 derated linearly 3 1 0.3 10 ms* with increase in 10 temperature. 0.1 1 3 10 30 100 Collector-emitter voltage VCE 300 0.1 1 1000 (V) Tj ≤ 125°C VGE = 15 V RG = 33 Ω 3 10 30 100 Collector-emitter voltage VCE 5 300 1000 (V) 2002-04-08 10 10 rth (t) (°C/W) GT20J321 Transient thermal resistance 10 10 10 10 10 rth (t) – tw 2 1 FRD 0 IGBT −1 −2 −3 −4 10 Tc = 25°C −5 10 −4 10 −3 10 −2 Pulse width 10 −1 tw 10 0 10 1 10 2 (s) 6 2002-04-08 GT20J321 RESTRICTIONS ON PRODUCT USE 000707EAA • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. 7 2002-04-08