RENESAS H5N2509P

H5N2509P
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1109-0200
(Previous: ADE-208-1378)
Rev.2.00
Sep 07, 2005
Features
•
•
•
•
•
Low on-resistance: R DS (on) = 0.053 Ω typ.
Low leakage current: IDSS = 1 µA max (at VDS = 250 V, VGS = 0 V)
High speed switching: tf = 110 ns typ (at ID = 15 A, RL = 8.3 Ω, VGS = 10 V)
Low gate charge: Qg = 110 nC typ (at VDD = 200 V, VGS = 10 V, ID = 30 A)
Avalanche ratings
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
1. Gate
2. Drain (Flange)
3. Source
G
1
Rev.2.00 Sep 07, 2005 page 1 of 6
2
3
S
H5N2509P
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Symbol
VDSS
Value
250
Unit
V
VGSS
ID
±30
30
V
A
120
30
A
A
120
30
A
A
150
0.833
W
°C/W
150
–55 to +150
°C
°C
Gate to source voltage
Drain current
Note 1
Drain peak current
Body-drain diode reverse drain current
ID (pulse)
IDR
Body-drain diode reverse drain peak current
Avalanche current
IDR (pulse)
Note 3
IAP
Note 1
Note 2
Channel dissipation
Channel to case thermal Impedance
Pch
θ ch-c
Channel temperature
Storage temperature
Tch
Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Tch ≤ 150°C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Symbol
V (BR) DSS
Min
250
Typ
—
Max
—
Unit
V
Test Conditions
ID = 10 mA, VGS = 0
IGSS
IDSS
—
—
—
—
±0.1
1
µA
µA
VGS = ±30 V, VDS = 0
VDS = 250 V, VGS = 0
VGS (off)
RDS (on)
3.0
—
—
0.053
4.0
0.069
V
Ω
VDS = 10 V, ID = 1 mA
Note 4
ID = 15 A, VGS = 10 V
Forward transfer admittance
Input capacitance
|yfs|
Ciss
17
—
28
3600
—
—
S
pF
Output capacitance
Reverse transfer capacitance
Coss
Crss
—
—
450
115
—
—
pF
pF
ID = 15 A, VDS = 10 V
VDS = 25 V
VGS = 0
f = 1 MHz
Turn-on delay time
Rise time
td (on)
tr
—
—
48
120
—
—
ns
ns
Turn-off delay time
Fall time
td (off)
tf
—
—
190
110
—
—
ns
ns
Total gate charge
Gate to source charge
Qg
Qgs
—
—
110
19
—
—
nC
nC
Gate to drain charge
Body-drain diode forward voltage
Qgd
VDF
—
—
53
0.9
—
1.35
nC
V
IF = 30 A, VGS = 0
trr
Qrr
—
—
210
1.8
—
—
ns
µC
IF = 30 A, VGS = 0
diF/dt = 100 A/µs
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Body-drain diode reverse recovery time
Body-drain diode reverse recovery charge
Note:
4. Pulse test
Rev.2.00 Sep 07, 2005 page 2 of 6
ID = 15 A
VGS = 10 V
RL = 8.3 Ω
Rg = 10 Ω
VDD = 200 V
VGS = 10 V
ID = 30 A
Note 4
H5N2509P
Main Characteristics
Maximum Safe Operation Area
1000
200
ID (A)
300
150
Drain Current
Channel Dissipation
Pch (W)
Power vs. Temperature Derating
100
50
10
100
PW
µs
1
10
m
0
=1 s
µs
0m
O
s
10
pe
(1s
ra
ho
tio
t)
n
(T
3
c=
Operation in
25
°C
1 this area is
)
30
DC
limited by RDS(on)
0.3
Ta = 25°C
0.1
0
0
50
100
150
Case Temperature
1
200
Tc (°C)
30
300
1000
VDS (V)
100
10 V
VDS = 10 V
Pulse Test
Pulse Test
80
ID (A)
8V
7V
60
Drain Current
40
5.5 V
20
80
60
6V
5V
40
Tc = 75°C
20
–25°C
25°C
VGS = 4.5 V
0
0
0
4
8
12
Drain to Source Voltage
16
20
Pulse Test
4
3
ID = 30 A
15 A
1
5A
0
0
4
8
12
Gate to Source Voltage
Rev.2.00 Sep 07, 2005 page 3 of 6
16
20
VGS (V)
2
4
6
8
Gate to Source Voltage
10
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
RDS(on) (mΩ)
5
2
0
VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
VDS(on) (V)
100
Typical Transfer Characteristics
100
ID (A)
10
Drain to Source Voltage
Typical Output Characteristics
Drain Current
3
200
Pulse Test
100
VGS = 10 V, 15 V
50
20
10
1
2
5
10
Drain Current
20
50
ID (A)
100
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
vs. Temperature
200
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS(on) (mΩ)
H5N2509P
Pulse Test
VGS = 10 V
160
ID = 30 A
120
15 A
80
5A
40
0
–40
0
40
80
120
Case Temperature
160
100
50
Tc = –25°C
20
10
5
25°C
75°C
2
1
0.5
0.2
0.2
50
20
ID (A)
VGS = 0
f = 1 MHz
10000
5000
Ciss
2000
1000
500
Coss
200
Crss
1
3
10
30
100
0
20
12
VDS
8
200
100
4
VDD = 200 V
100 V
50 V
40
80
Gate Charge
Rev.2.00 Sep 07, 2005 page 4 of 6
120
160
Qg (nC)
80
100
VDS (V)
0
200
10000
Switching Time t (ns)
16
VGS (V)
VGS
Gate to Source Voltage
ID = 30 A
VDD = 50 V
100 V
200 V
60
Switching Characteristics
20
500
40
Drain to Source Voltage
IDR (A)
Dynamic Input Characteristics
VDS (V)
50 100
50
0.3
Reverse Drain Current
Drain to Source Voltage
10 20
100
10
0.1
0
0
5
20000
100
300
2
50000
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
200
400
1
Typical Capacitance vs.
Drain to Source Voltage
Capacitance C (pF)
Reverse Recovery Time trr (ns)
500
0.5
Drain Current
Tc (°C)
Body-Drain Diode Reverse
Recovery Time
1000
VDS = 10 V
Pulse Test
VGS = 10 V, VDD = 125 V
PW = 10 µs, duty ≤ 1 %
RG = 10 Ω
1000
td(off)
100
tf
td(on)
tr
10
0.1
0.3
1
3
Drain Current
10
30
ID (A)
100
H5N2509P
Reverse Drain Current
IDR (A)
100
Pulse Test
80
VGS = 0 V
60
40
20 5 V 10 V
0
0
0.4
0.8
1.2
1.6
Source to Drain Voltage
Gate to Source Cutoff Voltage
vs. Case Temperature
Gate to Source Cutoff Voltage VGS(off) (V)
Reverse Drain Current vs.
Source to Drain Voltage
2.0
5
4
ID = 10 mA
3
1 mA
0.1 mA
2
1
VDS = 10 V
0
–50
VSD (V)
0
50
100
150
Case Temperature
200
Tc (°C)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
Tc = 25°C
D=1
0.5
0.3
0.2
0.1
θch – c (t) = γ s (t) • θch – c
θch – c = 0.833°C/W, Tc = 25°C
0.1
0.05
0.03
PDM
0.02
1
0.0
0.01
10 µ
D=
PW
e
uls
p
ot
T
h
1s
PW
T
100 µ
1m
10 m
Pulse Width
100 m
1
PW (S)
Switching Time Test Circuit
Vin Monitor
10
Waveform
90%
Vout
Monitor
D.U.T.
Vin
10%
RL
Vout
10 Ω
Vin
10 V
VDD
= 125 V
10%
90%
td(on)
Rev.2.00 Sep 07, 2005 page 5 of 6
10%
tr
90%
td(off)
tf
H5N2509P
Package Dimensions
RENESAS Code
Package Name
MASS[Typ.]
SC-65
PRSS0004ZE-A
TO-3P / TO-3PV
5.0g
15.6 ± 0.3
Unit: mm
4.8 ± 0.2
1.5
0.3
19.9 ± 0.2
2.0
14.9 ± 0.2
0.5
1.0
φ3.2 ± 0.2
5.0 ± 0.3
JEITA Package Code
1.6
2.0
1.4 Max
18.0 ± 0.5
2.8
1.0 ± 0.2
3.6
0.6 ± 0.2
0.9
1.0
5.45 ± 0.5
5.45 ± 0.5
Ordering Information
Part Name
Quantity
Shipping Container
H5N2509P-E
360 pcs
Box (Tube)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Sep 07, 2005 page 6 of 6
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .3.0