HITACHI HAT2052T

HAT2052T
Silicon N Channel Power MOS FET
High Speed Power Switching
ADE-208-724C (Z)
4th. Edition
February 1999
Features
•
•
•
•
Low on-resistance
Capable of 2.5 V gate drive
Low drive current
High density mounting
Outline
TSSOP–8
87
8
D
1
D
4
G
65
12
34
5
G
S S
2 3
MOS1
S S
6 7
MOS2
1, 8
Drain
2, 3, 6, 7 Source
4, 5
Gate
HAT2052T
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
28
V
Gate to source voltage
VGSS
± 12
V
Drain current
ID
5.0
A
40
A
Drain peak current
I D(pulse)
Body-drain diode reverse drain current
I DR
Note1
5.0
A
Pch
Note2
1.0
W
Channel dissipation
Pch
Note3
1.5
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
– 55 to + 150
°C
Channel dissipation
Note:
1. PW ≤ 10µs, duty cycle ≤ 1 %
2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
3. 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V(BR)DSS
28
—
—
V
I D = 10 mA, VGS = 0
Gate to source leak current
I GSS
—
—
± 0.1
µA
VGS = ± 12 V, VDS = 0
Zero gate voltege drain current
I DSS
—
—
1
µA
VDS = 28 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
0.4
—
1.4
V
VDS = 10 V, I D = 1 mA
Static drain to source on state
RDS(on)
—
0.027
0.034
Ω
I D = 3 A, VGS = 4 V Note4
resistance
RDS(on)
—
0.037
0.044
Ω
I D = 3 A, VGS = 2.5 V Note4
Forward transfer admittance
|yfs|
7
11
—
S
I D = 3 A, VDS = 10 V Note4
Input capacitance
Ciss
—
510
—
pF
VDS = 10 V
Output capacitance
Coss
—
190
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
140
—
pF
f = 1MHz
Total gate charge
Qg
—
8.5
—
nc
VDD = 10 V
Gate to source charge
Qgs
—
4.5
—
nc
VGS = 4 V
Gate to drain charge
Qgd
—
4
—
nc
ID = 5 A
Turn-on delay time
t d(on)
—
14
—
ns
VGS = 4 V, ID = 3 A
Rise time
tr
—
120
—
ns
VDD ≅ 10 V
Turn-off delay time
t d(off)
—
85
—
ns
Fall time
tf
—
120
—
ns
Body–drain diode forward voltage
VDF
—
0.85
1.1
V
IF = 5.0 A, VGS = 0 Note4
Body–drain diode reverse
recovery time
t rr
—
40
—
ns
IF = 5.0 A, VGS = 0
diF/ dt = 20 A/µs
Note:
2
4. Pulse test
HAT2052T
Main Characteristics
Power vs. Temperature Derating
100
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
1.5
Maximum Safe Operation Area
10 µs
30
I D (A)
Pch (W)
2.0
100 µs
10
DC
Drain Current
2
1.0
ive
Dr
1
er
50
0.3
at
0.1
ion
100
Ambient Temperature
0.03
150
200
Ta (°C)
PW
Op
er
1
n
Op
tio
ive
ra
Dr
0.5
0
e
Op
Channel Dissipation
3
1
at
ion
m
s
=
10
m
s
(P
W N
Operation in
< ote
10 5
this area is
s)
limited by R DS(on)
Ta = 25 °C
1 shot Pulse
0.01
0.1 0.3
1
3
10
30
100
Drain to Source Voltage V DS (V)
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Output Characteristics
10
4V
1.5 V
6
Drain Current
I D (A)
8
I D (A)
Pulse Test
10V
Drain Current
Typical Transfer Characteristics
10
4
2
8
6
–25°C
4
25°C
2
Tc = 75°C
V DS = 10 V
Pulse Test
VGS = 1.0 V
0
1
2
3
Drain to Source Voltage
4
5
V DS (V)
0
1
2
3
Gate to Source Voltage
5
4
V GS (V)
3
HAT2052T
0.20
0.15
0.10
ID=5A
0.05
10
1A
I D= 5 A
2A
40
5, 2, 1 A
4V
Pulse Test
0
40
2.5 V
0.02
VGS = 4 V
0.01
0.2
80
120
Tc
(°C)
0.5
1
2
Drain Current
VGS = 2.5 V
0
–40
0.05
V GS (V)
80
Case Temperature
4
8
Static Drain to Source on State Resistance
vs. Temperature
100
20
Pulse Test
0.1
0.002
2
4
6
Gate to Source Voltage
60
0.2
0.005
2A
1A
0
Static Drain to Source on State Resistance
R DS(on) (m Ω)
Pulse Test
160
Forward Transfer Admittance |y fs | (S)
Drain to Source Saturation Voltage
V DS(on) (V)
0.25
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source On State Resistance
R DS(on) ( Ω )
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
50
5
10
20
I D (A)
Forward Transfer Admittance vs.
Drain Current
Tc = –25 °C
20
10
75 °C
5
25 °C
2
1
0.5
0.2
V DS = 10 V
Pulse Test
0.5
1
2
5
Drain Current I D (A)
10
20
HAT2052T
Body–Drain Diode Reverse
Recovery Time
10000
200
Capacitance C (pF)
Reverse Recovery Time trr (ns)
500
100
50
20
10
5
0.1
5
VGS = 0
f = 1 MHz
3000
1000
Ciss
300
Coss
100
Crss
30
di/dt = 20 A/µs
V GS = 0, Ta = 25°C
0.2
0.5
1
2
Reverse Drain Current
Typical Capacitance vs.
Drain to Source Voltage
10
0
10
10
I DR (A)
30 V
DS
6
20
10
0
4
V DD = 25 V
10 V
5V
4
8
12
16
Gate Charge Qg (nc)
2
0
20
1000
500
Switching Time t (ns)
V GS
V GS (V)
8
Gate to Source Voltage
V DS (V)
Drain to Source Voltage
I D = 5.0 A
V DD = 5 V
10 V
25 V
40
50
Switching Characteristics
10
40
30
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
50
20
V GS = 4 V, V DD = 10 V
PW = 3 µs, duty < 1 %
200
t d(off)
100
50
tf
tr
20
10
0.1
t d(on)
0.2
0.5
1
Drain Current
2
5
I D (A)
10
5
HAT2052T
Reverse Drain Current vs.
Souece to Drain Voltage
10
Reverse Drain Current I DR (A)
Pulse Test
8
6
5V
4
V GS = 0 V
2
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
V SD (V)
Switching Time Test Circuit
Switching Time Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
Vin
4V
50Ω
V DD
= 10 V
Vout
10%
10%
90%
td(on)
6
tr
10%
90%
td(off)
tf
HAT2052T
Normalized Transient Thermal Impedance vs. Pulse Width ( 1 Drive Operation)
Normalized Transient Thermal Impedance
γ s (t)
10
1
D=1
0.5
0.1
0.01
0.2
0.1
0.05
θ ch – f(t) = γ s (t) • θ ch – f
θ ch – f = 166 °C/W, Ta = 25 °C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
0.02
0.01
e
uls
0.001
p
ot
PDM
sh
1
D=
PW
T
PW
T
0.0001
10 µ
100 µ
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width ( 2 Drive Operation)
Normalized Transient Thermal Impedance
γ s (t)
10
1
D=1
0.5
0.1
0.01
0.2
0.1
0.05
θ ch – f(t) = γ s (t) • θ ch – f
θ ch – f = 210 °C/W, Ta = 25 °C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
0.02
0.01
0.0001
10 µ
PDM
e
0.001
t
ho
1s
ls
pu
D=
PW
T
PW
T
100 µ
1m
10 m
100 m
1
10
Pulse Width PW (S)
100
1000
10000
7
HAT2052T
Package Dimensions
Unit: mm
1
4
0.65
0.10
0.22
+0.08
–0.07
0.13 M
0.17 ± 0.05
6.40 ± 0.20
0.07 +0.03
–0.04
5
1.10 Max
8
4.40 ± 0.1
3.00 ± 0.1
0–8°
0.50 ± 0.10
Hitachi code
EIAJ
JEDEC
8
TTP–8D
—
—
Cautions
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
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traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
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