HCS244T Data Sheet July 1999 Radiation Hardened Octal Buffer/Line Driver, Three-State Intersil‘s Satellite Applications FlowTM (SAF) devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended to meet the cost and shorter lead-time needs of large volume satellite manufacturers, while maintaining a high level of reliability. The Intersil HCS244T is a Radiation Hardened NonInverting Octal Buffer/Line Driver, Three-State, with two active-low output enables. File Number 4616.1 Features • QML Class T, Per MIL-PRF-38535 • Radiation Performance - Gamma Dose (γ) 1 x 105 RAD(Si) - Latch-Up Free Under Any Conditions - SEP Effective LET No Upsets: >100 MEV-cm2/mg - Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ) • 3 Micron Radiation Hardened CMOS SOS • Fanout (Over Temperature Range) Specifications • Bus Driver Outputs - 15 LSTTL Loads Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed below must be used when ordering. • Significant Power Reduction Compared to LSTTL ICs Detailed Electrical Specifications for the HCS244T are contained in SMD 5962-95731. A “hot-link” is provided from our website for downloading. www.intersil.com/spacedefense/newsafclasst.asp Intersil‘s Quality Management Plan (QM Plan), listing all Class T screening operations, is also available on our website. www.intersil.com/quality/manuals.asp • DC Operating Voltage Range: 4.5V to 5.5V • Input Logic Levels - VIL = 0.3 VCC Max - VIH = 0.7 VCC Min • Input Current Levels Ii ≤ 5µA at VOL, VOH Pinouts HCS244DTR (SBDIP), CDIP2-T20 TOP VIEW Ordering Information ORDERING INFORMATION 5962R9573101TRC 5962R9573101TXC PART NUMBER HCS244DTR HCS244KTR OE 1 1 20 A0 1 2 19 2 OE VCC Y3 2 3 18 1 Y0 TEMP. RANGE (oC) A1 1 4 17 2 A3 Y2 2 5 16 1 Y1 A2 1 6 15 2 A2 -55 to 125 Y1 2 7 14 1 Y2 A3 1 8 13 2 A1 Y0 2 9 12 1 Y3 10 11 2 A0 -55 to 125 NOTE: Minimum order quantity for -T is 150 units through GND distribution, or 450 units direct. HCS244KTR (FLATPACK), CDFP4-F20 TOP VIEW 1 20 A0 1 2 19 2 OE Y3 2 3 18 1 Y0 A1 1 4 17 2 A3 Y2 2 5 16 1 Y1 A2 1 6 15 2 A2 Y1 2 7 14 1 Y2 A3 1 8 13 2 A1 Y0 2 9 12 1 Y3 10 11 2 A0 GND 1 VCC OE 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 Satellite Applications Flow™ (SAF) is a trademark of Intersil Corporation. HCS244T Functional Diagram 1Y0 18 N P 1Y1 16 N P 1Y2 14 N P 1Y3 12 N 2Y0 9 P P N 2Y1 7 P N 2Y2 5 P N 2Y3 3 P N 19 2OE 1 1OE 2 1A0 4 1A1 6 1A2 8 1A3 11 2A0 13 2A1 15 2A2 TRUTH TABLE INPUTS H L X Z 2 = = = = OUTPUT 1OE, 2OE A Y L L L L H H H X Z High Voltage Level Low Voltage Level Immaterial High Impedance 17 2A3 HCS244T Die Characteristics DIE DIMENSIONS: PASSIVATION: (2747µm x 2693µm x 533µm ±51.0µm) Type: Silox (SiO2) 108 x 106 x 21mils ±2mil Thickness: 13.0kÅ ±2.6kÅ METALLIZATION: WORST CASE CURRENT DENSITY: < 2.0e5 A/cm2 Type: Al Si Thickness: 11.0kÅ ±1kÅ TRANSISTOR COUNT: SUBSTRATE POTENTIAL: 224 Unbiased Silicon on Sapphire PROCESS: BACKSIDE FINISH: CMOS SOS Sapphire Metallization Mask Layout HCS244T Y3 2 (3) A0 1 (2) OE (1) VCC (20) OE 2 (19) (18) Y0 1 A1 1 (4) (17) A3 2 Y2 2 (5) (16) Y1 1 A2 1 (6) (15) A2 2 Y1 2 (7) (14) Y2 1 (8) (9) (10) (11) (12) (13) A3 1 Y0 2 GND A0 2 Y3 1 A1 2 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 3 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029