1N4148G SMALL-SIGNAL DIODE Reverse Voltage 100 Volts Peak Forward Current - 150mA DO-35 FEATURES .022 (0.56) .018 (0.46) 1.02 (26.0) MIN. * Silicon Epitaxial Planar Diode * Fast switching diode. .165 (4.2) MAX. * Lead free product .079 (2.0) DIA. MAX. 1.02 (26.0) MIN. MECHANICAL DATA Case : DO-35 Glass Case Weight : approx. 0.13 gram *Dimensions in inches and (millimeters) o MAXIMUM RATINGS THERMAL CHARACTERISTICS ( TA=25 C unless otherwise noted ) PARAMETER Continuous Reverse Voltage Peak Reverse Voltage Average Rectified Current Half Wave Rectification with Resistive Load at Tamb = 25oC Surge Forward Current at t < 1s and Tj = 25oC o (1) Power Dissipation at Tamb = 25 C Thermal Resistance Junction to Ambient Air (1) SYMBOLS VALUE UNITS VR 75 Vdc VRM 100 Vdc IF( AV ) 150 mAdc IFSM 500 mAdc Ptot 500 mW 350 K/W R JA Junction Temperature TJ 175 o C Storage Temperature TSTG -65 to +175 o C o ELECTRICAL CHARACTERISTICS ( TA=25 C unless otherwise noted ) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNITS IR - - 25 5 50 nAdc uAdc uAdc Reverse Voltage Leakage Current ( VR=20Vdc ) ( VR=75Vdc ) o ( VR=20Vdc, TJ=150 C ) Reverse Breakdown Voltage ( IR=100uAdc ) V( BR ) 100 - - Vdc Forward Voltage ( IF=10mAdc ) VF - - 1.0 Vdc Junction Capacitance ( VR=0, f=1.0MHz ) CJ - - 4 pF Voltage Rise when Switching ON ( tp=0.1us, Rise time < 30ns VFR - - 2.5 V trr - - 4 nS ( tested with 50 mA Pulses ) Reverse Recovery Time fp=5 to 100 kHZ ( IF=10mA, IR=1mA, VR=6V, RL=100 ) 1. Vaild provided that leads at a distance of 8 mm from case are kept at ambient temperature (DO-35) REV. : 0 Zowie Technology Corporation RATINGS AND CHARACTERISTIC CURVES OF 1N4148G FIG.1 - FORWARD CHARACTERISTICS 10 FIG.2 - ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE 1000 3 For conditions, see footnote in table "Absolute Max. Ratings" 10 800 2 700 Tj = 100℃ 10 Tj = 25℃ 600 Ptot ( mW ) IF - FORWARD CURRENT ( mA ) 900 500 400 1 300 10 200 -1 100 10 -2 0 0 1 2 0 100 200 Tamb ( ℃ ) VF - FORWARD VOLTAGE ( V ) FIG.3 - RELATIVE CAPACITANCE VERSUS REVERSE VOLTAGE 10 FIG.4 - LEAKAGE CURRENT VERSUS JUNCTION TEMPERATURE 4 Tj = 25℃ f = 1MHz 1.1 103 IR ( nA ) Ctot ( ℃ ) / ( 0 V ) 1.0 0.9 102 0.8 10 VR = 20V 0.7 1 0 2 4 6 8 10 Tj ( ℃ ) VR ( V ) FIG.5 - ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION 100 I 50 V = tp / T IFRM 10 IFRM ( A ) T = 1/ fp tp t 5 T 1 0.5 0.1 10-5 10-4 10-3 10-2 10-1 1 2 5 10 tp ( S ) REV. : 0 Zowie Technology Corporation