HGTP12N60B3, HGT1S12N60B3S Data Sheet January 2000 File Number 4410.2 27A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. • 27A, 600V, TC = 25oC The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . 112ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss Packaging JEDEC TO-220AB Formerly developmental type TA49171. E Ordering Information PART NUMBER COLLECTOR (FLANGE) PACKAGE C G BRAND HGTP12N60B3 TO-220AB G12N60B3 HGT1S12N60B3S TO-263AB G12N60B3 NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, e.g., HGT1S12N60B3S9A. JEDEC TO-263AB Symbol COLLECTOR (FLANGE) C G E G E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000 HGTP12N60B3, HGT1S12N60B3S Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTP12N60B3, HGT1S12N60B3S UNITS 600 27 12 110 ±20 ±30 96A at 600V 104 0.83 100 -55 to 150 V A A A V V Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC W W/oC mJ oC oC oC 300 260 5 10 µs µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 25Ω. TC = 25oC, Unless Otherwise Specified Electrical Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 600 - - V Emitter to Collector Breakdown Voltage BVECS IC = 10mA, VGE = 0V 20 28 - V - - 250 µA - - 2.0 mA - 1.6 2.1 V - 1.7 2.5 V 4.5 4.9 6.0 V - - ±250 nA 96 - - A Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage ICES VCE(SAT) VGE(TH) VCE = BVCES IC = IC110 , VGE = 15V TC = 25oC TC = 150oC TC = 25oC TC = 150oC IC = 250µA, VCE = VGE IGES VGE = ±20V Switching SOA SSOA TJ = 150oC, RG = 25Ω, VGE = 15V L = 100µH, VCE = 600V Gate to Emitter Plateau Voltage VGEP IC = IC110 , VCE = 0.5 BVCES - 7.3 - V IC = IC110 , VCE = 0.5 BVCES VGE = 15V - 51 60 nC VGE = 20V - 68 78 nC - 26 - ns - 23 - ns - 150 - ns - 62 - ns - 150 - µJ Gate to Emitter Leakage Current On-State Gate Charge Qg(ON) Current Turn-On Delay Time td(ON)I Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time tfI IGBT and Diode at TJ = 25oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 25Ω L = 1mH Test Circuit (Figure 17) Turn-On Energy (Note 4) EON1 Turn-On Energy (Note 4) EON2 - 304 350 µJ Turn-Off Energy (Note 3) EOFF - 250 350 µJ 2 HGTP12N60B3, HGT1S12N60B3S TC = 25oC, Unless Otherwise Specified (Continued) Electrical Specifications PARAMETER SYMBOL Current Turn-On Delay Time td(ON)I Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time tfI TEST CONDITIONS IGBT and Diode at TJ = 150oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 25Ω L = 1mH Test Circuit (Figure 17) MIN TYP MAX UNITS - 22 - ns - 23 - ns - 280 295 ns - 112 175 ns - 165 - µJ Turn-On Energy (Note 4) EON1 Turn-On Energy (Note 4) EON2 - 500 525 µJ Turn-Off Energy (Note 3) EOFF - 660 800 µJ Thermal Resistance Junction To Case RθJC - - 1.2 oC/W NOTES: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 17. Unless Otherwise Specified ICE , DC COLLECTOR CURRENT (A) 30 VGE = 15V 25 20 15 10 5 0 25 50 75 100 125 TC , CASE TEMPERATURE (oC) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE 3 150 ICE , COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 100 TJ = 150oC, RG = 25Ω, VGE = 15V, L = 100µH 90 80 70 60 50 40 30 20 10 0 0 100 200 300 400 500 600 700 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA HGTP12N60B3, HGT1S12N60B3S TJ = 150oC, RG = 25Ω, L = 1mH, V CE = 480V TC 75oC 75oC 110oC 110oC 100 VGE 15V 10V 15V 10V 10 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RØJC = 1.2oC/W, SEE NOTES 1 2 3 10 20 30 16 14 90 ISC 12 80 10 70 8 60 50 6 tSC 40 4 2 10 ICE , COLLECTOR TO EMITTER CURRENT (A) 60 TC = 150oC 40 TC = 25oC DUTY CYCLE <0.5%, VGE = 10V PULSE DURATION = 250µs 10 0 0 2 4 6 8 10 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) TC = -55oC 20 180 TJ = 25oC, TJ = 150oC, VGE = 10V 2.0 1.5 1.0 0.5 TJ = 25oC, TJ = 150oC, VGE = 15V 20 15 25 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 4 30 TC = -55oC 140 120 100 TC = 150oC 80 60 TC = 25oC 40 20 0 0 2 4 6 8 10 FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE EOFF, TURN-OFF ENERGY LOSS (mJ) EON2 , TURN-ON ENERGY LOSS (mJ) 2.5 10 15 2.5 RG = 25Ω, L = 1mH, VCE = 480V 5 14 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE 0 13 DUTY CYCLE <0.5%, VGE = 15V PULSE DURATION = 250µs 160 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 3.0 12 FIGURE 4. SHORT CIRCUIT WITHSTAND TIME 70 30 11 VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT 50 100 VCE = 360V, RG = 25Ω, TJ = 125oC ISC , PEAK SHORT CIRCUIT CURRENT (A) fMAX , OPERATING FREQUENCY (kHz) 300 Unless Otherwise Specified (Continued) tSC , SHORT CIRCUIT WITHSTAND TIME (µs) Typical Performance Curves 30 RG = 25Ω, L = 1mH, VCE = 480V 2.0 1.5 TJ = 150oC; VGE = 10V OR 15V 1.0 0.5 TJ = 25oC; VGE = 10V OR 15V 0 5 10 15 20 25 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 30 HGTP12N60B3, HGT1S12N60B3S Typical Performance Curves Unless Otherwise Specified (Continued) 150 55 RG = 25Ω, L = 1mH, VCE = 480V 50 45 40 TJ = 25oC, TJ = 150oC, VGE = 10V 35 TJ = 25oC, TJ = 150oC, VGE = 15V 30 100 75 50 25 25 20 TJ = 25oC, TJ = 150oC, VGE = 10V 125 trI , RISE TIME (ns) tdI , TURN-ON DELAY TIME (ns) RG = 25Ω, L = 1mH, VCE = 480V 0 5 10 15 20 30 25 TJ = 25oC and TJ = 150oC, VGE = 15V 5 ICE , COLLECTOR TO EMITTER CURRENT (A) RG = 25Ω, L = 1mH, VCE = 480V RG = 25Ω, L = 1mH, VCE = 480V 275 130 250 120 225 tfI , FALL TIME (ns) td(OFF)I , TURN-OFF DELAY TIME (ns) 30 FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT TJ = 150oC, VGE = 10V, VGE = 15V 200 TJ = 25oC, VGE = 10V, VGE = 15V 175 110 TJ = 150oC, VGE = 10V, VGE = 15V 100 90 150 80 125 70 TJ = 25oC, VGE = 10V OR 15V 60 5 10 20 15 25 5 30 10 ICE , COLLECTOR TO EMITTER CURRENT (A) 160 140 VGE, GATE TO EMITTER VOLTAGE (V) TC = -55oC DUTY CYCLE <0.5%, VCE = 10V PULSE DURATION = 250µs TC = 25oC 120 100 TC = 150oC 80 60 40 20 5 6 7 8 9 10 11 12 13 VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 13. TRANSFER CHARACTERISTIC 5 30 14 15 Ig (REF) = 1mA, RL = 25Ω, TC = 25oC 12 VCE = 600V 9 6 VCE = 200V VCE = 400V 3 0 4 25 FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT 15 180 20 15 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT ICE , COLLECTOR TO EMITTER CURRENT (A) 25 140 300 0 20 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT 100 15 10 0 5 10 15 20 25 30 35 40 Qg, GATE CHARGE (nC) FIGURE 14. GATE CHARGE WAVEFORMS 45 50 HGTP12N60B3, HGT1S12N60B3S Typical Performance Curves Unless Otherwise Specified (Continued) 2.50 FREQUENCY = 1MHz CIES C, CAPACITANCE (nF) 2.00 1.50 1.00 COES 0.50 CRES 0 0 5 10 15 20 25 VCE, COLLECTOR TO EMITTER VOLTAGE (V) ZθJC , NORMALIZED THERMAL RESPONSE FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE 100 0.5 0.2 0.1 10-1 0.05 t1 0.02 0.01 DUTY FACTOR, D = t1 / t2 SINGLE PULSE 10-2 -5 10 PD t2 PEAK TJ = PD x ZθJC x RθJC + TC 10-4 10-3 10-2 10-1 100 101 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE Test Circuit and Waveforms HGTP12N60B3D 90% 10% VGE EON2 EOFF L = 1mH VCE RG = 25Ω 90% + - ICE VDD = 480V 10% td(OFF)I tfI trI td(ON)I FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT 6 FIGURE 18. SWITCHING TEST WAVEFORMS HGTP12N60B3, HGT1S12N60B3S Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2 ; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM . Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 18. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM . td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC . The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 18. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF ; i.e., the collector current equals zero (ICE = 0). All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com 7 ECCOSORBD™ is a Trademark of Emerson and Cumming, Inc.