ETC HGT1S14N36G3VLT

HGTP14N36G3VL,
HGT1S14N36G3VL,
HGT1S14N36G3VLS
14A, 360V N-Channel,
Logic Level, Voltage Clamping IGBTs
September 2001
Features
Packages
JEDEC TO-220AB
• Logic Level Gate Drive
EMITTER
COLLECTOR
GATE
• Internal Voltage Clamp
• ESD Gate Protection
COLLECTOR
(FLANGE)
o
• TJ = 175 C
• Ignition Energy Capable
JEDEC TO-262AA
Description
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
A
This N-Channel IGBT is a MOS gated, logic level device
which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active
voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in
ignition circuits. Internal diodes provide ESD protection for
the logic level gate. Both a series resistor and a shunt
resister are provided in the gate circuit.
JEDEC TO-263AB
M
COLLECTOR
(FLANGE)
A
A
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
GATE
BRAND
HGTP14N36G3VL
TO-220AB
14N36GVL
HGT1S14N36G3VL
TO-262AA
14N36GVL
HGT1S14N36G3VLS
TO-263AB
14N36GVL
EMITTER
Terminal Diagram
NOTE: When ordering, use the entire part number. To obtain the TO263AB in tape and reel, drop the S and add the suffix T; i.e.,
HGT1S14N36G3VLT.
N-CHANNEL ENHANCEMENT MODE
COLLECTOR
The development type number for this device is TA49021.
R1
GATE
R2
EMITTER
Absolute Maximum Ratings
TC = +25oC, Unless Otherwise Specified
Collector-Emitter Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCER
Emitter-Collector Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVECS
Collector Current Continuous at VGE = 5V, TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . IC25
at VGE = 5V, TC = +100oC . . . . . . . . . . . . . . . . . . . . . .IC100
Gate-Emitter Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Inductive Switching Current at L = 2.3mH, TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . ISCIS
at L = 2.3mH, TC = + 175oC . . . . . . . . . . . . . . . . . . . . . . ISCIS
Collector to Emitter Avalanche Energy at L = 2.3mH, TC = +25oC. . . . . . . . . . . . . . . EAS
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Electrostatic Voltage at 100pF, 1500Ω . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD
HGTP14N36G3VL,
HGT1S14N36G3VL,
HGT1S14N36G3VLS
390
24
18
14
±10
17
12
332
100
0.67
-40 to +175
260
6
UNITS
V
V
A
A
V
A
A
mJ
W
W/oC
o
C
o
C
KV
NOTE: May be exceeded if IGEM is limited to 10mA.
©2001 Fairchild Semiconductor Corporation
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. A1
Specifications HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
Electrical Specifications
TC = +25oC, Unless Otherwise Specified
LIMITS
PARAMETERS
Collector-Emitter Breakdown Voltage
Gate-Emitter Plateau Voltage
Gate Charge
SYMBOL
BVCER
MAX
UNITS
TC = +175oC
320
355
400
V
TC = +25oC
330
360
390
V
TC = -40oC
320
350
385
V
TC = +25oC
-
2.7
-
V
QG(ON)
IC = 7A,
VCE = 12V
TC = +25oC
-
24
-
nC
IC = 7A
RG = 1000Ω
TC = +175oC
350
380
410
V
IC = 10mA
TC = +25oC
24
28
-
V
VCE = 250V
RGE = 1kΩ
TC = +25oC
-
-
25
µA
TC = +175oC
-
-
250
µA
TC = +25oC
-
1.25
1.45
V
TC = +175oC
-
1.15
1.6
V
TC = +25oC
-
1.6
2.2
V
TC = +175oC
-
1.7
2.9
V
TC = +25oC
1.3
1.8
2.2
V
Emitter-Collector Breakdown Voltage
BVECS
ICER
VCE(SAT)
IC = 7A
VGE = 4.5V
IC = 14A
VGE = 5V
Gate-Emitter Threshold Voltage
TYP
IC = 7A,
VCE = 12V
BVCE(CL)
Collector-Emitter Saturation Voltage
IC = 10mA,
VGE = 0V
RGE = 1kΩ
MIN
VGEP
Collector-Emitter Clamp Breakdown
Voltage
Collector-Emitter Leakage Current
TEST CONDITIONS
VGE(TH)
IC = 1mA
VCE = VGE
Gate Series Resistance
R1
TC = +25oC
-
75
-
Ω
Gate-Emitter Resistance
R2
TC = +25oC
10
20
30
kΩ
Gate-Emitter Leakage Current
Gate-Emitter Breakdown Voltage
Current Turn-Off Time-Inductive Load
Inductive Use Test
Thermal Resistance
©2001 Fairchild Semiconductor Corporation
IGES
VGE = ±10V
±330
±500
±1000
µA
BVGES
IGES = ±2mA
±12
±14
-
V
-
7
-
µs
TC = +175oC
12
-
-
A
TC = +25oC
17
-
-
A
-
-
1.5
tD(OFF)I +
tF(OFF)I
ISCIS
RθJC
IC = 7A, RL = 28Ω
RG = 25Ω, L = 550µH,
VCL = 300V, VGE = 5V,
TC = +175oC
L = 2.3mH,
VG = 5V,
o
C/W
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. A1
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
Typical Performance Curves
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, VCE = 10V
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, TC = +25oC
40
ICE, COLLECTOR-EMITTER CURRENT (A)
ICE, COLLECTOR-EMITTER CURRENT (A)
25
20
15
10
+25oC
+175oC
5
-40oC
10V
30
4.5V
20
4.0V
3.5V
10
3.0V
2.5V
0
0
1
2
3
4
0
5
2
4
6
8
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VGE, GATE-TO-EMITTER VOLTAGE (V)
35
VGE = 5.0V
TC = +175oC
30
25
10
FIGURE 2. SATURATION CHARACTERISTICS
VGE = 4.5V
20
VGE = 4.0V
15
10
5
ICE , COLLECTOR EMITTER CURRENT (A)
FIGURE 1. TRANSFER CHARACTERISTICS
ICE , COLLECTOR EMITTER CURRENT (A)
5.0V
35
-40oC
VGE = 4.5V
30
+25oC
25
+175oC
20
15
10
5
0
0
4
1
2
3
VCE(SAT) , SATURATION VOLTAGE (V)
0
5
0
1
2
3
4
5
VCE(SAT) , SATURATION VOLTAGE (V)
FIGURE 3. COLLECTOR-EMITTER CURRENT AS A FUNCTION
OF SATURATION VOLTAGE
FIGURE 4. COLLECTOR-EMITTER CURRENT AS A FUNCTION
OF SATURATION VOLTAGE
2.25
1.35
VGE = 4.0V
1.25
VGE = 4.5V
1.15
VGE = 5.0V
1.05
-25
+25
+75
+125
TJ , JUNCTION TEMPERATURE (oC)
FIGURE 5. SATURATION VOLTAGE AS A FUNCTION OF
JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor Corporation
ICE = 14A
VCE(SAT) , SATURATION VOLTAGE (V)
VCE(SAT) , SATURATION VOLTAGE (V)
ICE = 7A
VGE = 4.0V
2.00
1.75
VGE = 4.5V
VGE = 5.0V
1.50
+175
-25
+25
+75
+125
+175
TJ , JUNCTION TEMPERATURE (oC)
FIGURE 6. SATURATION VOLTAGE AS A FUNCTION OF
JUNCTION TEMPERATURE
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. A1
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
ICE, COLLECTOR-EMITTER CURRENT (A)
20
VGE = 5V
18
16
14
12
10
8
6
4
2
0
+25
+50
+75
+125
+100
TC, CASE TEMPERATURE (oC)
+150
+175
FIGURE 7. COLLECTOR-EMITTER CURRENT AS A FUNCTION
OF CASE TEMPERATURE
VGE(TH), NORMALIZED THRESHOLD VOLTAGE
Typical Performance Curves (Continued)
1.2
ICE = 1ma
1.1
1.0
0.9
0.8
0.7
0.6
+25
+75
+125
TJ , JUNCTION TEMPERATURE (oC)
-25
+175
FIGURE 8. NORMALIZED THRESHOLD VOLTAGE AS A
FUNCTION OF JUNCTION TEMPERATURE
7.0
VCE = 300V, VGE = 5V
VECS = 20V
6.5
t(OFF)I, TURN OFF TIME (µs)
LEAKAGE CURRENT (µA)
1E4
1E3
1E2
1E1
VCES = 250V
RGE = 25Ω, L = 550µH
RL = 37Ω, ICE = 7A
6.0
5.5
5.0
4.5
4.0
1E0
3.5
3.0
1E-1
+20
+60
+100
+140
TJ , JUNCTION TEMPERATURE
(oC)
FIGURE 9. LEAKAGE CURRENT AS A FUNCTION OF
JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor Corporation
+180
+25
+50
+ 75
+100
+125
+150
+175
TJ , JUNCTION TEMPERATURE (oC)
FIGURE 10. TURN-OFF TIME AS A FUNCTION OF
JUNCTION TEMPERATURE
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. A1
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
Typical Performance Curves (Continued)
650
VGE = 5V
+25oC
VGE = 5V
600
550
20
+175
EAS , ENERGY (mJ)
oC
15
+25oC
500
450
400
350
300
10
+175oC
250
200
5
0
2
6
4
8
10
150
2
0
L, INDUCTANCE (mH)
FIGURE 11. SELF CLAMPED INDUCTIVE SWITCHING
CURRENT AS A FUNCTION OF INDUCTANCE
10
8
FIGURE 12. SELF CLAMPED INDUCTIVE SWITCHING ENERGY
AS A FUNCTION OF INDUCTANCE
REF IG = 1mA, RL = 1.7Ω, TC = +25oC
FREQUENCY = 1MHz
1800
1600
CIES
1400
1200
1000
800
600
400
COES
200
CRES
0
0
5
10
15
20
25
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 13. CAPACITANCE AS A FUNCTION OF COLLECTOREMITTER VOLTAGE
©2001 Fairchild Semiconductor Corporation
VCE, COLLECTOR-EMITTER VOLTAGE (V)
2000
C, CAPACITANCE (pF)
4
6
L , INDUCTANCE (mH)
12
6
10
5
8
4
VCE = 12V
3
6
VCE = 4V
4
2
VCE = 8V
2
1
0
VGE, GATE-EMITTER VOLTAGE (V)
IC , INDUCTIVE SWITCHING CURRENT (A)
25
0
0
5
10
15
20
25
30
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. A1
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
355
100
BVCER, COLLECTOR-EMITTER
BKDN VOLTAGE (V)
ZθJC , NORMALIZED THERMAL RESPONSE
Typical Performance Curves (Continued)
0.5
0.2
t1
10-1 0.1
PD
0.05
t2
0.02
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
0.01
10-2
10-5
350
345
340
25oC
335
175oC
330
SINGLE PULSE
325
10-4
10-3
10-2
10-1
101
100
0
2000
4000
6000
8000
10000
RGE, GATE-TO- EMITTER RESISTANCE (Ω)
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 15. NORMALIZED TRANSIENT THERMAL
IMPEDANCE, JUNCTION TO CASE
FIGURE 16. BREAKDOWN VOLTAGE AS A FUNCTION OF
GATE-EMITTER RESISTANCE
Test Circuits
RL
2.3mH
VDD
L = 550µH
C
RGEN = 25Ω
RG
DUT
5V
C
1/RG = 1/RGEN + 1/RGE
RGEN = 50Ω
G
E
G
DUT
+
-
10V
VCC
300V
RGE = 50Ω
E
FIGURE 17. SELF CLAMPED INDUCTIVE SWITCHING
CURRENT TEST CIRCUIT
©2001 Fairchild Semiconductor Corporation
FIGURE 18. CLAMPED INDUCTIVE SWITCHING TIME
TEST CIRCUIT
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. A1
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
Handling Precautions for IGBT’s
Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through the
device. With proper handling and application procedures,
however, IGBT’s are currently being extensively used in production by numerous equipment manufacturers in military,
industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBT’s can be
handled safely if the following basic precautions are taken:
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as †“ECCOSORBD LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating -The gate-voltage rating of VGEM
may be exceeded if IGEM is limited to 10mA.
† Trademark Emerson and Cumming, Inc
.
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
©2001 Fairchild Semiconductor Corporation
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. A1
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
TO-220AB (Alternate Version)
3 LEAD JEDEC TO-220AB PLASTIC PACKAGE
A
E
ØP
INCHES
A1
Q
H1
TERM. 4
D
L1
b1
c
1
2
3
e
e1
J1
MAX
MILLIMETERS
MIN
MAX
NOTES
A
0.170
0.180
4.32
4.57
-
0.048
0.052
1.22
1.32
2, 4
b
0.030
0.034
0.77
0.86
2, 4
b1
0.045
0.055
1.15
1.39
2, 4
c
0.018
0.022
0.46
0.55
2, 4
D
0.590
0.610
14.99
15.49
-
E
0.395
0.405
10.04
10.28
e1
60o
MIN
A1
e
b
L
SYMBOL
0.100 TYP
0.200 BSC
H1
0.235
0.255
J1
0.095
0.105
L
0.530
0.550
-
2.54 TYP
5
5.08 BSC
5
5.97
6.47
-
2.42
2.66
6
13.47
13.97
-
L1
0.110
0.130
2.80
3.30
3
ØP
0.149
0.153
3.79
3.88
-
Q
0.105
0.115
2.66
2.92
-
NOTES:
1. These dimensions are within allowable dimensions of Rev. J of
JEDEC TO-220AB outline dated 3-24-87.
2. Dimension (without solder).
3. Solder finish uncontrolled in this area.
4. Add typically 0.002 inches (0.05mm) for solder plating.
5. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D.
6. Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D.
7. Controlling dimension: Inch.
8. Revision 3 dated 7-97.
©2001 Fairchild Semiconductor Corporation
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. A1
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
TO-262AA
3 LEAD JEDEC TO-262AA PLASTIC PACKAGE
fq
E
INCHES
A
15o
A1
H1
TERM. 4
D
L1
b1
c
o
60
2
3
e
e1
©2001 Fairchild Semiconductor Corporation
J1
MAX
MILLIMETERS
MIN
MAX
NOTES
A
0.170
0.180
4.32
4.57
-
0.048
0.052
1.22
1.32
3, 4
b
0.030
0.034
0.77
0.86
3, 4
b1
0.045
0.055
1.15
1.39
3, 4
c
0.018
0.022
0.46
0.55
3, 4
D
0.405
0.425
10.29
10.79
-
E
0.395
0.405
10.04
10.28
e1
L
MIN
A1
e
b
1
SYMBOL
0.100 TYP
0.200 BSC
-
2.54 TYP
5
5.08 BSC
5
H1
0.045
0.055
1.15
1.39
-
J1
0.095
0.105
L
0.530
0.550
2.42
2.66
6
13.47
13.97
-
L1
0.110
0.130
2.80
3.30
2
NOTES:
1. These dimensions are within allowable dimensions of Rev. A of
JEDEC TO-262AA outline dated 6-90.
2. Solder finish uncontrolled in this area.
3. Dimension (without solder).
4. Add typically 0.002 inches (0.05mm) for solder plating.
5. Position of lead to be measured 0.250 inches (6.35mm) from
bottom of dimension D.
6. Position of lead to be measured 0.100 inches (2.54mm) from
bottom of dimension D.
7. Controlling dimension: Inch.
8. Revision 5 dated 7-97.
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. A1
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
TO-263AB
SURFACE MOUNT JEDEC TO-263AB PLASTIC PACKAGE
E
A
INCHES
A1
H1
MIN
MAX
MIN
MAX
A
0.170
0.180
4.32
4.57
-
A1
0.048
0.052
1.22
1.32
4, 5
TERM. 4
D
L2
L1
L
1
3
b
e
c
TERM. 4
0.450
(11.43)
L3
0.350
(8.89)
b2
0.700
(17.78)
3
0.150
(3.81)
1
b
0.030
0.034
0.77
0.86
4, 5
0.045
0.055
1.15
1.39
4, 5
b2
0.310
-
7.88
-
2
c
0.018
0.022
0.46
0.55
4, 5
D
0.405
0.425
10.29
10.79
-
E
0.395
0.405
10.04
10.28
e1
J1
e1
0.080 TYP (2.03)
0.062 TYP (1.58)
MINIMUM PAD SIZE RECOMMENDED FOR
SURFACE-MOUNTED APPLICATIONS
1.5mm
DIA. HOLE
NOTES
b1
e
b1
MILLIMETERS
SYMBOL
0.100 TYP
0.200 BSC
-
2.54 TYP
7
5.08 BSC
7
H1
0.045
0.055
1.15
1.39
-
J1
0.095
0.105
2.42
2.66
-
L
0.175
0.195
4.45
4.95
-
L1
0.090
0.110
2.29
2.79
4, 6
L2
0.050
0.070
1.27
1.77
3
L3
0.315
-
8.01
-
2
NOTES:
1. These dimensions are within allowable dimensions of Rev. C of
JEDEC TO-263AB outline dated 2-92.
2. L3 and b2 dimensions established a minimum mounting surface
for terminal 4.
3. Solder finish uncontrolled in this area.
4. Dimension (without solder).
5. Add typically 0.002 inches (0.05mm) for solder plating.
6. L1 is the terminal length for soldering.
7. Position of lead to be measured 0.120 inches (3.05mm) from bottom
of dimension D.
8. Controlling dimension: Inch.
9. Revision 10 dated 5-99.
4.0mm
USER DIRECTION OF FEED
2.0mm
TO-263AB
1.75mm
C
L
24mm TAPE AND REEL
24mm
16mm
COVER TAPE
40mm MIN.
ACCESS HOLE
30.4mm
13mm
330mm
100mm
GENERAL INFORMATION
1. 800 PIECES PER REEL.
2. ORDER IN MULTIPLES OF FULL REELS ONLY.
3. MEETS EIA-481 REVISION "A" SPECIFICATIONS.
©2001 Fairchild Semiconductor Corporation
24.4mm
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. A1
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FAST®
FASTr™
FRFET™
GlobalOptoisolator™
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LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER®
SMART START™
STAR*POWER™
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As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H4